There is provided a current detection circuit including: a current detection unit that detects a control current flowing between a control terminal of a semiconductor element of voltage-controlled type having a current detection terminal, and a drive circuit; an overcurrent detection unit that detects an overcurrent based on a result of comparing a sense voltage with a sense reference voltage, the sense voltage corresponding to a sense current flowing through the current detection terminal; and an adjustment unit that adjusts the sense reference voltage based on a detection result of the current detection unit.

The invention relates to a method for setting a dead time between the opening of a first switching element (31) of a half bridge (2) and the closing of a second switching element (32) of the half bridge (2), comprising the steps: reducing the dead time of a switching cycle relative to the dead time of a preceding switching cycle, and determining a temperature of at least one of the switching elements (31, 32); wherein the steps of reducing the dead time and of determining the temperature are repeated for subsequent switching cycles until a critical dead time is reached, in the case of which a termination condition, which depends on the determined temperature, is fulfilled; and wherein the dead time is set using the critical dead time.

A drive circuit of a power semiconductor element comprises a gate drive voltage generator to generate, based on an ON/OFF drive timing signal input to an input terminal, a gate drive voltage to be applied to a gate electrode of a switching element having the gate electrode for controlling a main current that flows between a first main electrode and a second main electrode, wherein the gate drive voltage generator includes a gate current limiting circuit in which a current limiter to limit a current and a voltage limiter to limit the magnitude of a voltage applied to both ends of the current limiter are connected in parallel.

There is provide a current detection circuit including: a current detection unit that detects a control current flowing between a control terminal of a semiconductor element of voltage-controlled type having a current detection terminal, and a drive circuit; an overcurrent detection unit that detects an overcurrent in response to a sense current exceeding an overcurrent threshold value, the sense current flowing through the current detection terminal; and an adjustment unit that sets, based on a detection result of the current detection unit, the overcurrent threshold value in a transient period during turn on and turn off of the semiconductor element to be higher than the overcurrent threshold value in a period other than the transient period.

A current generation circuit includes a metal-oxide-semiconductor (MOS) transistor having a source terminal coupled to one line of a power supply line and a ground line, a voltage generation circuit configured to generate a first voltage corresponding to a resistance value of wiring between the one line and the source terminal, and a control circuit configured to cause the MOS transistor to generate a predetermined current based on the first voltage.

An integrated circuit for controlling an ignition system including a coil. The integrated circuit includes a transistor configured to control a current flowing through the coil, a first line coupled to a control electrode of the transistor, a second line coupled to an electrode of the transistor on the ground side thereof, a control circuit configured to control on and off of the transistor based on a voltage level of the first line, and a Zener diode having a cathode coupled to the first line and an anode coupled to the second line. The Zener diode has such a capacitance that, when a first signal, and a second signal of a higher frequency, are inputted to the first line, the control circuit controls the on and off of the transistor in response to the first signal irrespective of the second signal.

A driver circuit controls a first switch element. A first resistor is connected between the driver circuit and the first switch element. A second switch element is connected to the first switch element. An overcurrent detector circuit controls the second switch element based on an overcurrent current flowing through the first switch element. A second resistor is connected between the overcurrent detector circuit and the second switch element. The first and second resistor is set such that a turn-off time of the first switch element when the second switch element is turned on by the overcurrent detector circuit is longer than a turn-off time of the first switch element when the first switch element is turned off by the driver circuit.

A test circuit for testing a switching device. The test circuit includes: a first terminal for receiving a drive signal; second, third and fourth terminals respectively coupled to a ground electrode, a control electrode and a power-supply electrode, of the switching device; and a clamping circuit coupled between the second terminal and the fourth terminal. The clamping circuit is configured to, upon turning on of the switching device responsive to the drive signal, cause a voltage at the third terminal to be a first voltage higher than a threshold of the switching device, and, upon turning off of the switching device responsive to the drive signal, cause the voltage at the third terminal to be a third voltage between the threshold and the first voltage, while clamping a voltage at the fourth terminal to a second voltage lower than a withstand voltage of the switching device.

A gate drive device for driving a switching element includes: a gate drive circuit that drives a gate of the switching element based on a gate drive signal and a drive performance adjustment signal; a gate voltage detection circuit that outputs an on detection signal or an off detection signal when detecting that a gate voltage of the switching element reaches an on determination set value or an off determination set value; and a control circuit that outputs the drive performance adjustment signal to the gate drive circuit to match a gate drive time with a predetermined gate drive time set value.

A gate driver to control a high-power switching device is disclosed. The gate driver includes a multifunction pin that allows the gate driver to be controlled by a multifunction signal to perform a number of different functions. For example, a level of the multifunction signal at the multifunction pin can enable/disable the output of the gate driver. In another example, a level of the multifunction signal that is held for a period while the gate driver is in a fault state can reset the state of the gate driver. In another example, pulsing the multifunction signal a number of times can activate a test of the fault detection capabilities of the gate driver. Utilizing one pin for this control, simplifies circuit complexity for communication between a controller and the gate driver, thereby reducing cost and increasing reliability.