A semiconductor circuit includes: a first inductor part configured to connect in series with a source electrode of a first semiconductor element; and a second inductor part configured to connect in series with a source electrode in a second semiconductor element that is configured to connect in parallel with the first semiconductor element; the first inductor part and the second inductor part are arranged to generate an induced electromotive force in the first inductor part and the second inductor part by way of a magnetic interaction so that the currents flowing in the first inductor part and the second inductor part are reinforced in the same direction.

Circuitry for reducing the energy losses of a snubber circuit used to protect current switching devices from overvoltage, comprising a switching cell consisting of a switch with alternating opposite conduction states, the switch being serially connected via one contact to a first diode, the switch includes an inherent output capacitance, the switch connects, via a first stray inductance), between one port of a power supply and an output inductor feeding a load, and the first diode connects, via a second stray inductance, between the other port of the power supply and the output inductor, such that whenever the switch passes from a conducting state to a non-conducting state, its inherent output capacitance is charged by a current pulse from the first stray inductance; a snubber circuit consisting of a ferrite bead, a snubber capacitor and a second diode, the snubber circuit being connecting between the other contact of the switch and the other port, for discharging at least a portion of the charge across the inherent output capacitance of the switch to the snubber capacitor via the other port.

A semiconductor device according to an embodiment includes a normally-off transistor having a first source, a first drain, and a first gate; a normally-on transistor having a second source electrically connected to the first drain, a second drain, and a second gate, a capacitor having a first end and a second end, the second end being electrically connected to the second gate, a first diode having a first anode electrically connected between the second end and the second gate and having a first cathode electrically connected to the second source, a first resistor provided between the first end and the first gate, and a second diode having a second anode electrically connected to the first end and having a second cathode electrically connected to the first gate, the second diode being provided in parallel with the first resistor.

A circuit for driving the voltage of a capacitive element between two voltage levels has at least one driver cell with a first pair of switches connected in series between a first terminal of a voltage source and the capacitive element, and a second pair of switches connected in series between a second terminal of the voltage source and the capacitive element. A plurality of non-dissipative elements may be connected in parallel or in series between the first pair of switches and the second pair of switches. Combinations of switches from the driver cells may be activated and deactivated in a defined sequence to provide step-wise transfer of energy to the capacitive element. The defined sequence may have a switching pattern with a voltage change portion arranged to cause a change in an output voltage of the capacitive element driver during application thereof on the capacitive element driver.

Circuitry for controlling current between a load and a power supply, the circuitry comprising: an output stage comprising: an input node configured to be coupled to the power supply; and an output node configured to be coupled to the load; and one or more control nodes for controlling a conduction path between the input node and the output node; and protection circuitry coupled to the one or more control nodes, the protection circuitry configured to break the conduction path between the input node and the output node when a load voltage at the output node exceeds a supply voltage at the input node, wherein the protection circuitry comprises: an active protection circuit configured to break the conduction path when the supply voltage exceeds an operational threshold of the active protection circuit; and a passive protection circuit configured to break the conduction path when the supply voltage is below an operation threshold of the active protection circuit.

A protection circuit 60 is provided with: switches 61, 62 positioned on a power line PL of an electricity storage element 22 and a load 12; first protection elements 63, 64, 65 connected in parallel with the switches 61, 62 and absorbing surge caused when the switches 61, 62 open and cut off discharge current; and a second protection element 66 connected in parallel with the load and flowing, back to the load, the surge caused when the switches 61, 62 open and cut off the discharge current.

An electronic device includes a semiconductor substrate and a bidirectional transistor switch formed on the substrate, the bidirectional switch including a first source node, a second source node and a common drain node. A first transistor is formed on the substrate and includes a first source terminal, a first drain terminal and a first gate terminal, wherein the first source terminal is connected to the substrate, the first drain terminal is connected to the first source node and the first gate terminal is connected to the second source node. A second transistor is formed on the substrate and includes a second source terminal, a second drain terminal and a second gate terminal, wherein the second source terminal is connected to the substrate, the second drain terminal is connected to the second source node and the second gate terminal is connected to the first source node.

Apparatus for performing substrate voltage management is provided herein and comprises an active substrate voltage management circuit configured to be coupled to a substrate of a bidirectional gallium nitride high electron mobility transistor comprising a first source and a second source. The active substrate voltage management circuit comprises a first circuit that is connected to the first source and a second circuit that is connected to a second source such that when the bidirectional gallium nitride high electron mobility transistor is operational one of the first circuit or the second circuit connects one of the first source to the substrate or the second source to the substrate, respectively, to control a bias voltage applied to the substrate.

An integrated circuit may include a power transistor coupled between a supply pin and an output pin; a current sensing circuit configured to sense a load current passing through the power transistor and to provide a respective current sense signal; a first configuration pin; a current output circuit configured to provide a diagnosis current at a current output pin; a diagnosis pin for receiving a diagnosis request signal; and a control circuit configured to: select a characteristic curve representing a current versus time characteristic dependent on a external circuit connected to the first configuration pin; generate a drive signal for the power transistor dependent on the selected characteristic curve and the current sense signal; and control—dependent on a pulse pattern of the diagnosis request signal—the current output circuit to set the value of the diagnosis current such that it represents the load current or the selected characteristic curve.

Disclosed are a full-wave drive circuit for an ultrasonic atomizing sheet and an ultrasonic electronic cigarette. In an embodiment, the ultrasonic atomizing sheet full-wave drive circuit comprises a power supply module, a microprocessor, a high-frequency square wave generation circuit, an NMOS transistor and a resonance circuit configured to convert, on the basis of the NMOS transistor, a voltage signal outputted by the high-frequency square wave generation circuit into a full-wave oscillation signal, so as to drive the ultrasonic atomizing sheet to perform full-wave oscillation. A disclosed embodiment has low requirements for a boost module, low loss of the boost module, high power conversion efficiency, small volume, low loss of NMOS transistor and low cost, is easy for debugging, and has high reliability and good atomization effect.