Provided is a semiconductor device capable of suppressing increase in size of a package and adjusting an amount of negative feedback. A power module as a semiconductor device includes an IGBT which is a switching element and a free wheel diode (FWD) parallelly connected to the switching element. The IGBT has, on a surface thereof, an emitter electrode and a gate electrode of the IGBT and a conductive pattern insulated from the emitter electrode and the gate electrode. The FWD has, on a surface thereof, an anode electrode of the FWD and a conductive pattern insulated from the anode electrode.

A power semiconductor device of the present disclosure includes: a first switching element; a second switching element connected in parallel to the first switching element, and having a higher short circuit capability than the first switching element; drive circuits to drive the first switching element and the second switching element; and determination circuits to compare a target current as a sum of a current flowing through the first switching element and a current flowing through the second switching element to a first threshold and a second threshold greater than the first threshold. The drive circuits switch off the first switching element when the determination circuits determine that the target current is equal to or greater than the first threshold, and switch off the second switching element when the determination circuits determine that the target current is equal to or greater than the second threshold.

A drive circuit of a voltage-controlled power semiconductor element, including first to fourth switching elements, first and second delay circuits, an overcurrent detection circuit, a slow shutdown detection circuit and a flip-flop. The first switching element turns on upon receiving an off signal. The second switching element is turned on by the first delayed signal generated by the first delay circuit. The third switching element turns on upon receiving a second delayed signal generated by the second delay circuit through the flip-flop. The fourth switching element is turned on by the slow shutdown detection signal generated by the slow shutdown detection circuit. The first to fourth switching elements extract electric charges from the gate terminal of the voltage-controlled power semiconductor element, with first to fourth extracting capabilities, respectively. The first and fourth extracting capabilities are larger than the third extracting capability and smaller than the second extracting capability.

A semiconductor device, including a control circuit that has a gate control circuit driving a power semiconductor element. The control circuit further includes a plurality of alarm detection circuits respectively detecting a plurality of abnormalities, a protection circuit stopping the gate control circuit responsive to the detection of any abnormality, an alarm signal generation circuit generating an alarm signal responsive to the detected abnormality, a warning detection circuit detecting a warning before any of the abnormalities is detected, and a pulse generation circuit generating a warning signal while the warning is being detected. The alarm signal is a one-shot pulse having a pulse width thereof corresponding to the detected abnormality, such that alarm signals generated responsive to different abnormalities have different pulse widths. The warning signal includes a plurality of successive pulses, each of which has a pulse width smaller than any of the pulse widths of the alarm signals.

An integrated circuit for controlling an ignition system including a coil. The integrated circuit includes a transistor configured to control a current flowing through the coil, a first line coupled to a control electrode of the transistor, a second line coupled to an electrode of the transistor on the ground side thereof, a control circuit configured to control on and off of the transistor based on a voltage level of the first line, and a Zener diode having a cathode coupled to the first line and an anode coupled to the second line. The Zener diode has such a capacitance that, when a first signal, and a second signal of a higher frequency, are inputted to the first line, the control circuit controls the on and off of the transistor in response to the first signal irrespective of the second signal.

Depicted embodiments are directed to an Application Specific Electronics Packaging (“ASEP”) system, which enables the manufacture of additional products using reel to reel (68a, 68b) manufacturing processes as opposed to the “batch” processes used to currently manufacture electronic products and MIDs. Through certain ASEP embodiments, it is possible to integrate connectors, sensors, LEDs, thermal management, antennas, RFID devices, microprocessors, memory, impedance control, and multi-layer functionality directly into a product.

This present disclosure discloses an ignition overcurrent protection device, which includes a switch, a current detection circuit, and a controller. The switch is electrically coupled between a starting power and a power-on connector; the power-on connector is configured for connecting to the automotive power. The current detection circuit is configured for detecting a current value flowing between the starting power and the power-on connector. The controller is coupled to the switch and the current detection circuit. The controller is configured to determine a current range where the current value is located, and determine a preset time threshold corresponding to the current range, and control the switch to be turned off when a duration of the current value reaches the preset time threshold. The present disclosure also provides a starting power equipment and ignition overcurrent protection.

A semiconductor device including a plurality of power modules each of which includes a power semiconductor switching element that has a temperature detection diode, and a drive circuit that has an output circuit for switching on and off the power semiconductor switching element, and that outputs a warning signal for calling attention if the value of the forward voltage of the temperature detection diode becomes equal to or smaller than a first reference voltage value, and that outputs a protection operation signal for stopping the on/off operation of the power semiconductor switching element if the value of the forward voltage becomes equal to or smaller than a second reference voltage value smaller than the first reference voltage value. The semiconductor device outputs the logical sum of the warning signals of the individual power modules as an external warning signal.

Current imbalances between parallel switching devices in a power converter half leg are reduced. A gate driver generates a nominal PWM gate drive signal for a respective half leg. A first feedback loop couples the nominal PWM gate drive signal to a gate terminal of a respective first switching device. The first feedback loop has a first mutual inductance with a current path of a first parallel switching device and has a second mutual inductance with a current path of a second parallel switching device. The first and second mutual inductances are arranged to generate opposing voltages in the first feedback loop, so that when all the parallel switching devices carry equal current then the voltages cancel.

According to one embodiment, electronic circuitry includes: a detection circuit including a diode, a cathode side of the diode being connected to one end of a semiconductor switching element and an anode side of the diode being connected to a first node; a comparator circuit configured to compare a voltage of the first node and a threshold voltage and generate a first signal; a first filter connected between the first node and another end of the semiconductor switching element and configured to suppress the voltage of the first node in a first period based on a control signal indicating turn-on of the semiconductor switching element; and a control circuit configured to determine at least one of the threshold voltage and the first period based on the first signal.