A level shifter includes a control circuit and a bias circuit. The control circuit receives a bias voltage, a first signal associated with a first voltage domain, and supply voltages associated with a second voltage domain, and outputs a second signal that is associated with the second voltage domain. The bias circuit generates the bias voltage that is indicative of the duty cycle of the second signal, and provides the bias voltage to the control circuit to control the duty cycle of the second signal. The duty cycle of the second signal is controlled such that a difference between a duty cycle of the first signal and an inverse of the duty cycle of the second signal is less than a tolerance limit.

An aspect of the disclosure relates to an apparatus including an output driver, including: a first p-channel metal oxide semiconductor field effect transistor (PMOS FET); a second PMOS FET coupled in series with the first PMOS FET between an upper voltage rail and an output; a first n-channel metal oxide semiconductor field effect transistor (NMOS FET); and a second NMOS FET coupled in series with the first NMOS FET between the output and a lower voltage rail; a first predriver coupled to gates of the first and second PMOS FETs and first and second NMOS FETs; and a second predriver coupled to the gates of the first and second PMOS FETs and first and second NMOS FETs.

In described examples, a first transistor has: a drain coupled to a source of a depletion-mode transistor; a source coupled to a first voltage node; and a gate coupled to a control node. A second transistor has: a drain coupled to a gate of the depletion-mode transistor; a source coupled to the first voltage node; and a gate coupled through at least one first logic device to an input node. A third transistor has: a drain coupled to the gate of the depletion-mode transistor; a source coupled to a second voltage node; and a gate coupled through at least one second logic device to the input node.

A level shifter includes a buffer circuit, a first shift circuit, and a second shift circuit. The buffer circuit provides a first signal and a first inverted signal to the first shift circuit, such that the first shift circuit provides a second signal and a second inverted signal to the second shift circuit. The second shift circuit generates a plurality of output signals according to the second signal and the second inverted signal. The first shift circuit includes a plurality of first stacking transistors and a first voltage divider circuit. The first voltage divider circuit is electrically coupled between a first system high voltage terminal and a system low voltage terminal. The first voltage divider circuit is configured to provide a first inner bias to gate terminals of the first stacking transistors.

A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

An apparatus includes a first leg having a plurality of transistors connected in series between a first node and a second node. Each of the plurality of transistors includes a respective body diode. The apparatus further includes a second leg connected between the first node and the second node and in parallel to the series connection of the plurality of transistors of the first leg. The second leg includes a first transistor. The second leg has lower reverse recovery losses relative to the first leg.

A buck voltage converter is disclosed. The buck voltage generator includes a controller configured to generate one or more pulse width modulation (PWM) signals, and a plurality of serially connected switches configured to receive the PWM signals and to generate an output voltage signal at an output terminal based on the received PWM signals. The output voltage signal has an average voltage corresponding with a duty cycle of the PWM signals, a first switch of the plurality of serially connected switches has a first breakdown voltage and a second switch of the plurality of serially connected switches has a second breakdown voltage, and the first breakdown voltage is less than the second breakdown voltage.

In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

A driving circuit and a driving method are provided. According to embodiments of the present disclosure, a power switch is driven by constant voltage or constant current during different time periods. The power switch is driven by using a first driving current during a Miller platform period, and the power switch is driven by using a second driving current when the Miller platform period ends, where the first driving current is less than the second driving current, so as to optimize EMI, reduce loss and improve efficiency.

This application discloses a chip and a signal level shifter circuit for use on a mobile terminal such as a charger or an adapter. The chip is co-packaged with a first silicon-based driver die and a second silicon-based driver die that are manufactured by using a BCD technology, and a first gallium nitride die and a second gallium nitride die that are manufactured by using a gallium nitride technology. A first silicon-based circuit is integrated on the first silicon-based driver die, a second silicon-based circuit is integrated on the second silicon-based driver die, and a high-voltage resistant gallium nitride circuit is integrated on the first gallium nitride die. In this way, it can be ensured that a second low-voltage silicon-based driver die manufactured by using a low-voltage BCD technology is not damaged by a high input voltage, thereby reducing costs of the chip.