Provided is a switching apparatus, including: a first semiconductor switching device of IGBT, and a second semiconductor switching device of a different type from IGBT, which are electrically connected in parallel; and a control unit configured to turn on the second semiconductor switching device before the first semiconductor switching device, wherein a maximum rated current of the second semiconductor switching device is greater than a maximum rated current of the first semiconductor switching device.

Provided is a control unit of a power conversion device configured to select, in each first set cycle, a first target switching element and a second target switching element from a plurality of switching elements connected in parallel to each other. The control unit performs control so that, at a time of a turn-on operation of a switching circuit, a turn-on start time of the first target switching element is earlier by a first set time period than a turn-on start time of another switching element that is not the first target switching element. The control unit performs control so that, at a time of a turn-off operation of the switching circuit, a turn-off start time of the second target switching element is later by a second set time period than a turn-off start time of another switching element that is not the second target switching element.

A gate driver device includes a first field effect transistor and a first driver circuit. The first field effect transistor includes a first gate electrode and a first backgate structure. The first driver circuit supplies a first backgate drive signal to the first backgate structure.

A semiconductor circuit includes: a first inductor part configured to connect in series with a source electrode of a first semiconductor element; and a second inductor part configured to connect in series with a source electrode in a second semiconductor element that is configured to connect in parallel with the first semiconductor element; the first inductor part and the second inductor part are arranged to generate an induced electromotive force in the first inductor part and the second inductor part by way of a magnetic interaction so that the currents flowing in the first inductor part and the second inductor part are reinforced in the same direction.

A switching regulator includes a first switch circuit, a second switch circuit, and a protection circuit. The first switch circuit has a first connection node coupled to a first reference voltage, and a second connection node coupled to one end of an inductor. The second switch circuit has a first connection node coupled to a second reference voltage, and a second connection node coupled to the one end of the inductor. The protection circuit senses a voltage level at the first connection node of the first switch circuit, and selectively enables an auxiliary current path in response to the voltage level at the first connection node of the first switch circuit, wherein the auxiliary current path and at least the first switch circuit are arranged in a parallel connection fashion.

A charge sensitive amplifier circuit for sensor frontend comprises an input node to be connected to a sensor to receive an input charge, and an output node to be connected to a charge conversion circuit. The charge sensitive amplifier circuit comprises a first transfer switch located between the input node and the output node to transfer the input charge to the output node. The charge sensitive amplifier circuit further comprises a second transfer switch located in parallel to the first transfer switch between the input node and the output node to transfer the input charge to the output node.

A load control device for controlling power delivered from an AC power source to an electrical load may have a closed-loop gate drive circuit for controlling a semiconductor switch of a controllably conductive device. The controllably conductive device may be coupled in series between the source and the load. The gate drive circuit may generate a target signal in response to a control circuit. The gate drive circuit may shape the target signal over a period of time and may increase the target signal to a predetermined level after the period of time. The gate drive circuit may receive a feedback signal that indicates a magnitude of a load current conducted through the semiconductor switch. The gate drive circuit may generate a gate control signal in response to the target signal and the feedback signal, and render the semiconductor switch conductive and non-conductive in response to the gate control signal.

A method of operating a driver circuit includes receiving a data signal at a first input of an amplification circuit; amplifying, using the amplification circuit, the data signal to produce an output signal through an output pin; attenuating, using a feedback network, the output signal to produce a feedback signal; coupling the feedback signal to a second input of the amplification circuit; detecting, using a control circuit, a fault condition; and decoupling, responsive to detecting the fault condition, the feedback signal from the second input of the amplification circuit. In some embodiments, the driver circuit transmits a fault condition signal to an electronic control unit of an automobile.

The present invention provides a power supply circuit with an adjustable channel switch impedance and an electronic device. The power supply circuit includes N main channel MOS transistors, a control module, an execution module and a detection module, wherein the execution module includes a first MOS transistor; the detection module includes a detection resistor and a second MOS transistor; a gate-source voltage of the main channel MOS transistors and a gate-source voltage of the first MOS transistor are configured to be consistent, and a source-drain voltage of the main channel MOS transistors and a source-drain voltage of the second MOS transistor are consistent; the control module is connected to the detection resistor and configured to: detect voltage drop information on voltage drop at two ends of the detection resistor, wherein the voltage drop information can represent a current of a load.

An apparatus is disclosed that includes a common drain, a common source, and a common gate, respectively, of the power semiconductor device, and paralleled transistor cells of the power semiconductor device. In various examples, a configuration of a gate structure of a first respective transistor cell coupled with the common gate is different than a configuration of a gate structure of a second respective transistor cell coupled with the common gate. Alternatively or additionally, in various examples, a configuration of a structure coupled between a first portion of the paralleled transistor cells and the common gate is different than a configuration of a structure coupled between the second portion of the paralleled transistor cells and the common gate.