An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.

Provided is a control unit of a power conversion device configured to select, in each first set cycle, a first target switching element and a second target switching element from a plurality of switching elements connected in parallel to each other. The control unit performs control so that, at a time of a turn-on operation of a switching circuit, a turn-on start time of the first target switching element is earlier by a first set time period than a turn-on start time of another switching element that is not the first target switching element. The control unit performs control so that, at a time of a turn-off operation of the switching circuit, a turn-off start time of the second target switching element is later by a second set time period than a turn-off start time of another switching element that is not the second target switching element.

A hybrid metal-oxide semiconductor field-effect transistor with variable gate impedance and an implementation method thereof, wherein the hybrid metal-oxide semiconductor field-effect transistor has the characteristic of changing the on-resistance according to different drive voltages. By use of a feedback loop and a variable gate drive voltage generator which can vary the generated gate drive voltage based on different loads, the present disclosure can still adjust the gate drive voltage under different load conditions without requiring a plurality of metal-oxide semiconductor field-effect transistors in series/parallel to achieve the lowest power loss.

A semiconductor device includes a first transistor that flows a current to a load, a current generation circuit that outputs a current corresponding to a power consumption of the first transistor, a temperature sensor, a resistor-capacitor network coupled between the current generation circuit and the temperature sensor and an overheat detection circuit coupled to a connection point of the current generation circuit and the resistor-capacitor network, wherein the resistor-capacitor network comprises a resistor and a capacitor corresponding to a thermal resistance and a thermal capacitance between the first transistor and the temperature sensor.

A method can include, in response to a power supply voltage transition, setting a temperature window to a first temperature range by operation of a temperature circuit formed on a semiconductor device. In response to a temperature of the semiconductor device being determined to be outside of the first temperature range, changing the temperature range of the temperature window until the temperature of the semiconductor device is determined to be within the temperature window.

An ignition device capable of more reliably protecting a primary winding of an ignition coil from high temperature is provided. The ignition device includes an ignition coil, a switching element, a temperature sensor, and a thermal cutout circuit. A primary winding of the ignition coil is connected to a DC power supply and the switching element. The temperature sensor is provided to measure the temperature of the switching element. The thermal cutout circuit forcibly turns off the switching element when the temperature of the switching element becomes higher than a predetermined forcible turn-off temperature Toff. The thermal cutout circuit is configured to lower the forcible turn-off temperature Toff when the power supply voltage Vb of the DC power supply decreases.

An electronic fuse circuit includes an electronic switch with a load current path coupled between an output node and a supply node and that connects or disconnects the output node and the supply node in accordance with a drive signal. The circuit includes a control circuit to generate the drive signal based on an input signal. A monitoring circuit is included in the control circuit to receive a current sense signal representing the load current passing through the load current path and to determine a first protection signal based on the current sense signal and a wire parameter. The first protection signal is indicative of whether to disconnect the output node from supply node. The control circuit changes from normal mode to idle mode when the load current is below a given current threshold and another criterion is fulfilled.

A power chip includes: a first power switch, formed in a wafer region and having a first and a second metal electrodes; a second power switch, formed in the wafer region and having a third and a fourth metal electrodes, wherein the first and second power switches respectively constitute an upper bridge arm and a lower bridge arm of a bridge circuit, and the first and second power switches are alternately arranged; and a metal region, at least including a first metal layer and a second metal layer that are stacked, each metal layer including a first to a third electrodes, and electrodes with the same voltage potential in the metal layers are electrically coupled.

A change rate control circuit computes a first drive speed, which is a gate drive speed of a gate of a drive-subject element, for controlling a change rate of an element voltage of the drive-subject element at a target change rate during a change period. A timing generating circuit acquires, in advance, a delay time caused when the gate is driven and determines a switching timing, at which the element voltage reaches a switching threshold voltage which is lower than a desired switching voltage by a predetermined value, during turn-off of the drive-subject element and generates a timing signal representing the switching timing. A speed change circuit changes the gate drive speed from the first drive speed to a second drive speed at the switching timing during turn-off of the drive-subject element.

A liquid ejecting apparatus includes a drive element, and a drive circuit that outputs a drive signal that drives the drive element, wherein the drive circuit includes a modulation circuit that modulates a base drive signal to output a modulation signal, an amplifier circuit that amplifies the modulation signal to output an amplified modulation signal, a demodulation circuit that demodulates the amplified modulation signal to output the drive signal, and a substrate on which the modulation circuit, the amplifier circuit, and the demodulation circuit are provided, wherein the substrate includes a base material includes a metal and a first layer laminated on the base material, wherein the first layer includes a first propagation wire through which at least one of the amplified modulation signal and the drive signal propagates, and wherein the base material has a thickness greater than a thickness of the first layer.