A driving circuit providing a driving signal at a driving terminal to drive a power switch. The driving signal has a first driving period and a second driving period. Both the first driving period and the second driving period have a first driving time interval. The driving circuit has a first equivalent on resistor established during the first driving time interval and located between a first voltage node and the driving terminal. The first equivalent on resistor has a first equivalent on resistance during the first driving time interval of the first driving period and has a second equivalent on resistance during the first driving time interval of the second driving period. The first equivalent on resistance and the second equivalent on resistance are not equal.

An integrated circuit can comprise an output terminal, a power transistor having a first current electrode coupled to the output terminal and a second current electrode coupled to a power supply terminal, a driver having an output coupled to a control electrode of the power switch, a capacitor having a first terminal coupled to the output terminal and a second terminal coupled to a circuit node, a first low pass filter coupled between the circuit node and an input of the driver, the first low pass filter having a first cut off frequency, a set of current sources, and a second low pass filter coupled between the circuit node and an output of the set of current sources. The second low pass filter can have a second cut off frequency that is higher than the first cut off frequency.

A circuit includes a high-side transistor pair and a low-side transistor pair having a common intermediate node. The high-side transistor pair includes a first transistor having a control node and a current flowpath therethrough configured to provide a current flow line between a supply voltage node and the intermediate node, and a second transistor having a current flowpath therethrough coupled to the control node of the first transistor. The low-side transistor pair includes a third transistor having a control node and a current flowpath therethrough configured to provide a current flow line between the intermediate node and the reference voltage node, and a fourth transistor having a current flowpath therethrough coupled to the control node of the third transistor. Testing circuitry is configured to be coupled to at least one of the second transistor and the fourth transistor to apply thereto a test-mode signal.

A power source switch circuit and an operation method thereof are provided. The power source switch circuit may include a switch circuit that includes a first switch configured switch a supply of a voltage from a first power supply circuit to a power supply terminal of a power amplifier, and a second switch configured to switch a supply of a voltage from a second power supply circuit to the power supply terminal of the power amplifier; and a switch controller configured to control the switch circuit to set the first switch and the second switch in a turned-on state during a first period when the first switch is turned off and the second switch is turned on.

A solid state relay and a method for controlling a signal path between an AC-signal output and a load in a power amplifier assembly are disclosed. The relay comprises a first and a second MOSFET having a common gate junction, a common source junction and wherein and wherein a drain terminal of a first MOSFET and a drain terminal of a second MOSFET form relay terminals. The solid state relay further comprises a control circuit comprising a positive side comprising a first controlled current generator configured to provide a first control current to the gate junction, and a negative side comprising a current mirror circuit configured to sink a second current from the source junction. Hereby, a generic solid state speaker relay has been disclosed. The relay performs up to the most stringent demands regarding pop/click on high quality products. It can be used to ground wire break, hot wire break and BTL (Bridge Tied Load) break. The design is rather tolerable to different MOSFETs and very competitive in quality and price.

A switch controller coupled to control a transistor. The switch controller comprising an interface coupled to receive a command signal in response to an event sensed in a control system. The command signal is representative of a first command to control the transistor with a first drive strength or a second command to control the transistor with a second drive strength. The switch controller is coupled to adjust a fall time or a rise time, or to adjust both the fall time and the rise time, of a voltage across the transistor in response to the command signal. The fall time or the rise time, or both the fall time and the rise time in response to the second command is shorter than the fall time or the rise time, or both the fall time and the rise time in response to the first command.

A switch control circuit a multiplexer switch circuit and a control method for a multiplexer switch control circuit are provided. The switch control circuit comprises a first control switch, a first capacitor and a field-effect transistor switch. When the first control switch is switched off, a charging voltage released by the first capacitor can control the switching-on of the field-effect transistor switch. At this moment, since the first control switch is switched off, and a power source signal cannot reach a gate electrode of the field-effect transistor switch, power source noise cannot be coupled to a line where source and drain electrodes of the field-effect transistor switch are located. Thus, in a discharge stage of the first capacitor, a discharge voltage can serve as a control signal to control the switching-on of the field-effect transistor switch.

This application discloses a drive circuit of a bridge arm switching transistor, a drive circuit, and a power converter. The bridge arm switching transistor includes a first switching transistor and a second switching transistor. A first terminal of the first switching transistor is connected to a power supply, a second terminal of the first switching transistor is connected to a first terminal of the second switching transistor, and a second terminal of the second switching transistor is grounded. The drive circuit includes a low-voltage region and at least two high-voltage regions isolated which include a first high-voltage region and a second high-voltage region. A semiconductor device configured to drive the second switching transistor is disposed in the low-voltage region. P-type semiconductor devices are disposed in each of the first high-voltage region and the second high-voltage region, and the P-type semiconductor devices are configured to drive the first switching transistor.

A power chip includes: a first power switch, formed in a wafer region and having a first and a second metal electrodes; a second power switch, formed in the wafer region and having a third and a fourth metal electrodes, wherein the first and second power switches respectively constitute an upper bridge arm and a lower bridge arm of a bridge circuit, and the first and second power switches are alternately arranged; and a metal region, at least including a first metal layer and a second metal layer that are stacked, each metal layer including a first to a third electrodes, and electrodes with the same voltage potential in the metal layers are electrically coupled.

A circuit for driving the voltage of a capacitive element between two voltage levels has at least one driver cell with a first pair of switches connected in series between a first terminal of a voltage source and the capacitive element, and a second pair of switches connected in series between a second terminal of the voltage source and the capacitive element. A plurality of non-dissipative elements may be connected in parallel or in series between the first pair of switches and the second pair of switches. Combinations of switches from the driver cells may be activated and deactivated in a defined sequence to provide step-wise transfer of energy to the capacitive element. The defined sequence may have a switching pattern with a voltage change portion arranged to cause a change in an output voltage of the capacitive element driver during application thereof on the capacitive element driver.