Apparatuses and methods for temperature and process corner sensitive control of power gated domains are described. An example apparatus includes an internal circuit; a power supply line; and a power gating control circuit which responds, at least in part, to a first change from a first state to a second state of a control signal to initiate supplying a power supply voltage from the power supply line to the internal circuit, and continue supplying the power supply voltage from the power supply line to internal circuit for at least a timeout period from a second change from the second state to the first state of the control signal, in which the timeout period represent temperature dependency.

Apparatuses and methods for temperature and process corner sensitive control of power gated domains are described. An example apparatus includes an internal circuit; a power supply line; and a power gating control circuit which responds, at least in part, to a first change from a first state to a second state of a control signal to initiate supplying a power supply voltage from the power supply line to the internal circuit, and continue supplying the power supply voltage from the power supply line to internal circuit for at least a timeout period from a second change from the second state to the first state of the control signal, in which the timeout period represent temperature dependency.

Provided is a switching apparatus, including: a first semiconductor switching device of IGBT, and a second semiconductor switching device of a different type from IGBT, which are electrically connected in parallel; and a control unit configured to turn on the second semiconductor switching device before the first semiconductor switching device, wherein a maximum rated current of the second semiconductor switching device is greater than a maximum rated current of the first semiconductor switching device.

Provided is a control unit of a power conversion device configured to select, in each first set cycle, a first target switching element and a second target switching element from a plurality of switching elements connected in parallel to each other. The control unit performs control so that, at a time of a turn-on operation of a switching circuit, a turn-on start time of the first target switching element is earlier by a first set time period than a turn-on start time of another switching element that is not the first target switching element. The control unit performs control so that, at a time of a turn-off operation of the switching circuit, a turn-off start time of the second target switching element is later by a second set time period than a turn-off start time of another switching element that is not the second target switching element.

A control circuit regulates the propagation delay of a field effect transistor (FET) before the FET transitions to the Miller region by applying a pre-charge current for a fixed duration to the gates of the FET. After the fixed duration, the current is reduced to a lower drive current level which is based on a desired output voltage slew rate. After the FET transitions to the Miller region, the output voltage slews down in accordance with the output voltage slew rate. By regulating the slew-rate of the output voltage in the Miller region and regulating the propagation delay of the FET prior to the Miller region, the control circuit reduces electromagnetic interference (EMI) caused by the switching of the FET, thereby improving electromagnetic compatibility (EMC) of switch mode driver systems without increasing the propagation delay of the FET.

A method is provided for driving a half bridge circuit that includes a first transistor and a second transistor that are switched in a complementary manner. The method includes generating an off-current during a plurality of turn-off switching events to control a gate voltage of the second transistor; measuring a transistor parameter of the second transistor during a first turn-off switching event during which the second transistor is transitioned to an off state, wherein the transistor parameter is indicative of an oscillation at the first transistor during a corresponding turn-on switching event during which the first transistor is transitioned to an on state; and activating a portion of the off-current for the second turn-off switching event, including regulating an interval length of the second portion for the second turn-off switching event based on the measured transistor parameter measured during the first turn-off switching event.

There has been a problem in semiconductor apparatuses of related art in which a circuit operation cannot be returned after a reverse current occurred. In one embodiment, a semiconductor apparatus includes a timer block configured to count up a count value to a predetermined value in response to a control signal being enabled, the control signal instructing a power MOS transistor to be turned on, and a protection transistor including a drain connected to a gate of the power MOS transistor, a source and a back gate connected to a source of the power MOS transistor, and an epitaxial layer in which the power MOS transistor is formed, the epitaxial layer being supplied with a power supply voltage. The protection transistor short-circuits the source and gate of the power MOS transistor in response to an output voltage of the power MOS transistor meeting a predetermined condition and the count value reaching the predetermined value. The timer block resets the count value when the output voltage of the power MOS transistor no longer meets the predetermined condition.

An apparatus comprises a power source connected to a buffer capacitor. The apparatus comprises a first switch connected between the buffer capacitor and a driven switch. The buffer capacitor is charged by the power source when the first switch is turned off. The apparatus comprises a comparator. The comparator monitors the charging of the buffer capacitor. In response to the buffer capacitor reaching a threshold amount of charge, the comparator turns on the first switch to initiate a charge redistribution of charge from the buffer capacitor to the driven switch.

An apparatus comprises a power source connected to a buffer capacitor. The apparatus comprises a first switch connected between the buffer capacitor and a driven switch. The buffer capacitor is charged by the power source when the first switch is turned off. The apparatus comprises a comparator. The comparator monitors the charging of the buffer capacitor. In response to the buffer capacitor reaching a threshold amount of charge, the comparator turns on the first switch to initiate a charge redistribution of charge from the buffer capacitor to the driven switch.

This application provides a gallium nitride component and a drive circuit thereof. The gallium nitride component includes: a substrate; a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer. The gate includes a P-doped gallium nitride (P—GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P—GaN cap layer. A Schottky contact is formed between the first gate metal and the P—GaN cap layer, and an ohmic contact is formed between the second gate metal and the P—GaN cap layer. In the technical solution provided in this application, the gallium nitride component is a normally-off component, and is conducive to design of a drive circuit.