In a gate driver, a comparator input is adapted to be coupled through a resistor and a diode to a first transistor. A latch input is coupled to a comparator output. A second transistor has a first control terminal and a first output terminal. The first output terminal is adapted to be coupled to a control terminal of the first transistor. A third transistor is smaller than the second transistor. The third transistor has a second control terminal and a second output terminal. The second output terminal is adapted to be coupled to the control terminal of the first transistor. Control logic has a logic input and first and second logic outputs. The logic input is coupled to a latch output. The first logic output is coupled to the first control terminal. The second logic output is coupled to the second control terminal.

An automotive power converter includes positive and negative DC rails, a pair of phase legs each having first and second switches connected in series, an output electrically connected between the first and second switches of each of the phase legs, and control circuitry configured to prevent turn on of the first switches responsive to current through either of the second switches exceeding a predefined threshold.

A method, apparatus, and system use logic circuitry arranged within an integrated circuit to: convert a self capacitance of a first sensor element arranged within the integrated circuit to a digital value, and apply a signal to an output pin of the integrated circuit based on the self capacitance.

The disclosure relates to solid state relay circuit for switching an electrical load. The solid state relay circuit may include a relay transistor; and a driver circuit comprising a constant current source. The driver circuit is configured and arranged to switchably operate the relay transistor, and the relay transistor is configured and arranged to switchably operate the electrical load.

An output stage circuit for transmitting data via a bus includes a high side switch, a high side diode structure, a high side clamp circuit, a low side switch, and a low side diode structure. An impedance circuit of the bus is coupled between the high side switch and the low side switch, for generating a differential output signal according to high and low side output signals. A high side N-type region of the high side diode structure encompasses a high side P-type region thereof, and a low side N-type region of the low side diode structure encompasses a low side P-type region thereof. The high side clamp circuit is connected to the high side N-type region in series, for clamping a voltage of the high side N-type region to be not lower than a predetermined voltage, to prevent a parasitic PNP bipolar junction transistor from being turned ON.

A semiconductor module includes: a control circuit for controlling first and second transistors operating complementarily; and an internal controller receiving a data signal including a set value of an operating characteristic from an external controller to store the data signal in a memory and then transferring the set value of the operating characteristic to the control circuit. The data signal is sent to the internal controller in the order of the set value of the operating characteristic and a specific trigger value. The internal controller transfers the set value of the operating characteristic to the control circuit in timed relation to writing of the specific trigger value into the memory. The control circuit includes first and second drivers. The control circuit changes settings of the first and second drivers to thereby change the operating characteristic of the semiconductor module.

An automotive power converter includes positive and negative DC rails, a pair of phase legs each having first and second switches connected in series, an output electrically connected between the first and second switches of each of the phase legs, and control circuitry configured to prevent turn on of the first switches responsive to current through either of the second switches exceeding a predefined threshold.

An output stage circuit for transmitting data via a bus includes a high side switch, a high side diode structure, a high side clamp circuit, a low side switch, and a low side diode structure. An impedance circuit of the bus is coupled between the high side switch and the low side switch, for generating a differential output signal according to high and low side output signals. A high side N-type region of the high side diode structure encompasses a high side P-type region thereof, and a low side N-type region of the low side diode structure encompasses a low side P-type region thereof. The high side clamp circuit is connected to the high side N-type region in series, for clamping a voltage of the high side N-type region to be not lower than a predetermined voltage, to prevent a parasitic PNP bipolar junction transistor from being turned ON.

An electrically conductive sub-collector layer is provided in a surface layer portion of a substrate. A collector layer, a base layer, and an emitter layer are located within the sub-collector layer when viewed in plan. The collector layer is connected to the sub-collector layer. An emitter electrode and a base electrode are long in a first direction when viewed in plan. The emitter electrode overlaps the emitter layer. The base electrode and the emitter electrode are discretely located away from each other in a second direction orthogonal to the first direction. A collector electrode is located on one side in the second direction with respect to the emitter electrode and is not located on the other side when viewed in plan. A base line is connected to the base electrode in a manner so as to adjoin a portion other than longitudinal ends of the base electrode.

One illustrative device includes, among other things, an active device comprising a first terminal, a first bias resistor connected to the first terminal, and a first resistor comprising a first phase transition material connected in parallel with the first bias transistor, wherein the first phase transition material exhibits a first low conductivity phase for temperatures less than a first phase transition temperature and a first high conductivity phase for temperatures greater than the first phase transition temperature.