In an embodiment an isolated gate driver device includes a low-voltage section having a control input configured to receive a PWM control signal with a switching frequency from a control stage, a high-voltage section, galvanically isolated from the low-voltage section the high-voltage section including a driving output configured to provide a gate-driving signal as a function of the PWM control signal to a power stage having at least one switch, a feedback input configured to receive at least one feedback signal indicative of an operation of the power stag, and an ADC module configured to convert the feedback signal into a digital data stream and a conversion-control module coupled to the ADC module and configured to provide a conversion-trigger signal designed to determine a start of a conversion for acquiring a new sample of the feedback signal.

In an embodiment an isolated gate driver device includes a low-voltage section having a control input configured to receive a PWM control signal with a switching frequency from a control stage, a high-voltage section, galvanically isolated from the low-voltage section the high-voltage section including a driving output configured to provide a gate-driving signal as a function of the PWM control signal to a power stage having at least one switch, a feedback input configured to receive at least one feedback signal indicative of an operation of the power stag, and an ADC module configured to convert the feedback signal into a digital data stream and a conversion-control module coupled to the ADC module and configured to provide a conversion-trigger signal designed to determine a start of a conversion for acquiring a new sample of the feedback signal.

A change rate control circuit computes a first drive speed, which is a gate drive speed of a gate of a drive-subject element, for controlling a change rate of an element voltage of the drive-subject element at a target change rate during a change period. A timing generating circuit acquires, in advance, a delay time caused when the gate is driven and determines a switching timing, at which the element voltage reaches a switching threshold voltage which is lower than a desired switching voltage by a predetermined value, during turn-off of the drive-subject element and generates a timing signal representing the switching timing. A speed change circuit changes the gate drive speed from the first drive speed to a second drive speed at the switching timing during turn-off of the drive-subject element.

A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

A level shifter includes an input circuit having first and second input terminals configured to receive complementary input signals at a first voltage level and a second voltage level. A cross-latch circuit is coupled to the input circuit, and has first and second output terminals configured to provide complementary output signals at a third voltage level and a fourth voltage level. The input circuit includes first and second control nodes configured to output first and second control signals at the first voltage level and the fourth voltage level based on the input signals. A tracking circuit is coupled to the input circuit and the cross-latch circuit, and is configured to input first and second tracking signals to the cross-latch circuit based on the first and second control signals, wherein the first tracking signal is the greater of the first control signal and the third voltage level, and the second tracking signal is the greater of the second control signal and the third voltage level.

A level shifter includes an input circuit having first and second input terminals configured to receive complementary input signals at a first voltage level and a second voltage level. A cross-latch circuit is coupled to the input circuit, and has first and second output terminals configured to provide complementary output signals at a third voltage level and a fourth voltage level. The input circuit includes first and second control nodes configured to output first and second control signals at the first voltage level and the fourth voltage level based on the input signals. A tracking circuit is coupled to the input circuit and the cross-latch circuit, and is configured to input first and second tracking signals to the cross-latch circuit based on the first and second control signals, wherein the first tracking signal is the greater of the first control signal and the third voltage level, and the second tracking signal is the greater of the second control signal and the third voltage level.

A system includes a sensor circuit configured to sense a parameter of a power system having an operating voltage greater than a voltage rating of the sensor circuit, an optical communications circuit configured to receive a sensor signal from the sensor circuit and to generate an optical communications signal therefrom, and an optical power supply circuit configured to receive an optical input, to generate electrical power from the received optical input and to supply the generated electrical power to the sensor circuit and the optical communications circuit. A driver circuit may be configured to generate a first control signal applied to a control terminal of the power semiconductor switch, and the optical power supply circuit may be configured to supply the generated electrical power to the sensor circuit, the optical communications circuit and the driver circuit.

A drive circuit configured to drive a power stage including a high voltage power switch device. The drive circuit has a transmitter configured to send a control signal, and a receiver configured to transfer a received signal to a drive signal by a first isolated capacitor loop and a second isolated capacitor loop. The first isolated capacitor loop has a same area as the second isolated capacitor loop.

An isolated gate driver has a first portion in a first voltage domain and a second portion in a second voltage domain. The first and second portions are coupled by an isolation communication channel. The isolated gate driver transmits across the isolation communication channel a serial word containing first drive strength information and simultaneously transmits gate information with the serial word across the isolation communication channel. The gate information indicates a state of a gate signal for a transistor coupled to the second portion of the isolated gate driver. A demodulator circuit demodulates a signal containing the gate information and the drive strength information transmitted across the isolation communication channel in the serial word. A gate signal output circuit coupled to the demodulator circuit supplies the gate signal based on the gate information with a drive strength of the gate signal being based on the drive strength information.