A transistor semiconductor die includes a first current terminal, a second current terminal, and a control terminal. A semiconductor structure is between the first current terminal, the second current terminal, and the control terminal and configured such that a resistance between the first current terminal and the second current terminal is based on a control signal provided at the control terminal. Short circuit protection circuitry is coupled between the control terminal and the second current terminal. In a normal mode of operation, the short circuit protection circuitry is configured to provide a voltage drop that is greater than a voltage of the control signal. In a short circuit protection mode of operation, the short circuit protection circuitry is configured to provide a voltage drop that is less than a voltage of the control signal.

A drive circuit includes a first driver to control on/off of an upper arm, a second driver to control on/off of a lower arm, a first switching device including a first terminal connected with a power supply for the first driver, a second terminal connected with a power supply for the second driver and a control terminal, a booster circuit to turn on the first switching device by boosting a control signal which is at a high level when the lower arm is in an on state, a second switching device to cause continuity between the control terminal and the booster circuit when the control signal is at the high level, and first switch unit to short-circuit the control terminal and the terminal for grounding when the control signal is at the low level.

A semiconductor device according to an embodiment includes a normally-off transistor having a first source, a first drain, and a first gate; a normally-on transistor having a second source electrically connected to the first drain, a second drain, and a second gate, a capacitor having a first end and a second end, the second end being electrically connected to the second gate, a first diode having a first anode electrically connected between the second end and the second gate and having a first cathode electrically connected to the second source, a first resistor provided between the first end and the first gate, and a second diode having a second anode electrically connected to the first end and having a second cathode electrically connected to the first gate, the second diode being provided in parallel with the first resistor.

According to one embodiment, a multichannel switch integrated circuit (IC) includes a multichannel switch circuit and a common test terminal. The multichannel switch circuit includes a plurality of switch circuitries. Each of the switch circuitries includes: an output transistor that outputs an output signal through an output terminal; an overcurrent detection circuit that detects a detection current according to a current flowing through the output transistor; and a diode having an anode that receives the detection current. The common test terminal is connected to each channel switch circuitry, connected to the overcurrent detection circuit through the diode, and connected to a cathode of the diode.

According to one embodiment, a multichannel switch integrated circuit (IC) includes a multichannel switch circuit and a common test terminal. The multichannel switch circuit includes a plurality of switch circuitries. Each of the switch circuitries includes: an output transistor that outputs an output signal through an output terminal; an overcurrent detection circuit that detects a detection current according to a current flowing through the output transistor; and a diode having an anode that receives the detection current. The common test terminal is connected to each channel switch circuitry, connected to the overcurrent detection circuit through the diode, and connected to a cathode of the diode.

A programmable resistance circuit provides a selected resistance by configuring a reference resistor to exhibit an effective resistance, in an operational sense, by achieving an average output voltage between a source line and a return line in the programmable resistance circuit. The average output voltage corresponds to the effective resistance. The effective resistance is achieved by utilizing a modulated voltage source to bias a transistor and intermittently draw current across the reference resistor according to the duty cycle of the modulated voltage source. A programmed resistance circuit can produce a selected resistance corresponding to button selection zones of a vehicle user interface when connected to a remote circuit that acts according to a user selection.

This disclosure describes systems, methods, and apparatuses for a PIN diode switch comprising series connected PIN diodes, the series connected PIN diodes comprising two or more PIN diodes connected in series, wherein each of the two or more PIN diodes comprises a first node and a second node; and an internal node positioned where a first node of a first PIN diode connects to a second node of a second, adjacent PIN diode; a RF bypass capacitor connected between a reference node and a first end of the series connected PIN diodes, and wherein a second end of the series connected PIN diodes is connected to the reference node; an RF circuit connected between the reference node and the internal node; and a PIN diode driver connected across the RF bypass capacitor.

This disclosure describes systems, methods, and apparatuses for a PIN diode switch comprising series connected PIN diodes, the series connected PIN diodes comprising two or more PIN diodes connected in series, wherein each of the two or more PIN diodes comprises a first node and a second node; and an internal node positioned where a first node of a first PIN diode connects to a second node of a second, adjacent PIN diode; a RF bypass capacitor connected between a reference node and a first end of the series connected PIN diodes, and wherein a second end of the series connected PIN diodes is connected to the reference node; an RF circuit connected between the reference node and the internal node; and a PIN diode driver connected across the RF bypass capacitor.

A method comprises configuring a power converter to operate as a boost converter, the power converter comprising a low side switch and a high side switch, during a first dead time after turning off the low side switch and before turning on the high side switch, configuring the power converter such that a current of the power converter flows through a high speed diode, and after turning on the high side switch, configuring the power converter such that the current of the power converter flows through a low forward voltage drop diode.

A method comprises configuring a power converter to operate as a boost converter, the power converter comprising a low side switch and a high side switch, during a first dead time after turning off the low side switch and before turning on the high side switch, configuring the power converter such that a current of the power converter flows through a high speed diode, and after turning on the high side switch, configuring the power converter such that the current of the power converter flows through a low forward voltage drop diode.