This disclosure describes systems, methods, and apparatuses for a PIN diode switch comprising series connected PIN diodes, the series connected PIN diodes comprising two or more PIN diodes connected in series, wherein each of the two or more PIN diodes comprises a first node and a second node; and an internal node positioned where a first node of a first PIN diode connects to a second node of a second, adjacent PIN diode; a RF bypass capacitor connected between a reference node and a first end of the series connected PIN diodes, and wherein a second end of the series connected PIN diodes is connected to the reference node; an RF circuit connected between the reference node and the internal node; and a PIN diode driver connected across the RF bypass capacitor.

A number of monolithic multi-throw diode switch structures are described. The monolithic multi-throw diode switches can include a hybrid arrangement of diodes with different intrinsic regions, all formed over the same semiconductor substrate. In one example, two PIN diodes in a monolithic multi-throw diode switch have different intrinsic region thicknesses. The first PIN diode has a thinner intrinsic region, and the second PIN diode has a thicker intrinsic region. This configuration allows for both the thin intrinsic region PIN diode and the thick intrinsic region PIN diode to be individually optimized. As one example, for a switch functioning in a dedicated transmit/receive mode, the first transmit PIN diode can have a thicker intrinsic region than the second receive PIN diode to maximize power handling for the transmit arm and maximize receive sensitivity and insertion loss in the receive arm.

A radio frequency switch circuit includes a negative voltage generating circuit, a notch network, a logic control circuit, and a radio frequency switching circuit. The logic control circuit can be configured to, upon being driven by the negative voltage signal generated by the negative voltage generating circuit, control the operating modes of the radio frequency switching circuit; and the notch network is connected between the negative voltage generating circuit and the logic control circuit. As such, the influence of radio frequency signals generated by the radio frequency switching circuit can be filtered through the notch network, and the interference of radio frequency signals to the negative voltage generating circuit can be reduced, thereby improving the performance of the radio frequency switch circuit, for example in insertion loss, isolation and harmonic suppression.

A radio frequency switch circuit includes a negative voltage generating circuit, a notch network, a logic control circuit, and a radio frequency switching circuit. The logic control circuit can be configured to, upon being driven by the negative voltage signal generated by the negative voltage generating circuit, control the operating modes of the radio frequency switching circuit; and the notch network is connected between the negative voltage generating circuit and the logic control circuit. As such, the influence of radio frequency signals generated by the radio frequency switching circuit can be filtered through the notch network, and the interference of radio frequency signals to the negative voltage generating circuit can be reduced, thereby improving the performance of the radio frequency switch circuit, for example in insertion loss, isolation and harmonic suppression.

Apparatus and methods for providing hot-switching immunity for radio frequency switching circuits are disclosed. A radio frequency switching circuit may include both a mechanical switch and a solid-state switch. The mechanical switch may be configurable to couple an output path of a power amplifier to a subsequent component in its transmission path when in a first mechanical switch state and to decouple the output path of the power amplifier from the subsequent component when in a second mechanical switch state. The solid-state switch may be configurable to operatively decouple the mechanical switch from a radio frequency power source when in a first solid-state switch state but not when in a second solid-state switch state. The solid-state switch may be in the first solid-state switch state during transitions of the mechanical switch between the first and second mechanical switch states.

A high-frequency switch circuit includes a first switch configured to electrify or cut off connection between an antenna terminal and an input terminal, and a second switch configured to electrify or cut off connection between the antenna terminal and an output terminal. The first switch has a transmission line connecting the antenna terminal and the input terminal; a diode having an anode connected to a first node between the transmission line and the input terminal, and a cathode connected to a second node; and a capacitor connected to the second node and a first power supply voltage. A first control terminal is connected to the first node via a first resistor and a first inductor. The first switch further includes a charging/discharging circuit connected to a second power supply voltage and the first control terminal and charging and discharging the capacitor from the second node.

A high-frequency switch circuit includes a first switch configured to electrify or cut off connection between an antenna terminal and an input terminal, and a second switch configured to electrify or cut off connection between the antenna terminal and an output terminal. The first switch has a transmission line connecting the antenna terminal and the input terminal; a diode having an anode connected to a first node between the transmission line and the input terminal, and a cathode connected to a second node; and a capacitor connected to the second node and a first power supply voltage. A first control terminal is connected to the first node via a first resistor and a first inductor. The first switch further includes a charging/discharging circuit connected to a second power supply voltage and the first control terminal and charging and discharging the capacitor from the second node.

A solid-state relay circuit includes an isolator circuit, a first output terminal, a second output terminal, and an output switch. The output switch is coupled to the isolator circuit, and includes a first transistor, a second transistor, and a diode. The first transistor is coupled to the first output terminal. The second transistor is coupled to the first transistor and the second output terminal. The diode is coupled to the first transistor, the second transistor, and ground, and is configured to block current flow from ground to the first transistor and the second transistor. The isolator circuit is coupled to the output switch and is configured to activate the first transistor and the second transistor.

A solid-state relay circuit includes an isolator circuit, a first output terminal, a second output terminal, and an output switch. The output switch is coupled to the isolator circuit, and includes a first transistor, a second transistor, and a diode. The first transistor is coupled to the first output terminal. The second transistor is coupled to the first transistor and the second output terminal. The diode is coupled to the first transistor, the second transistor, and ground, and is configured to block current flow from ground to the first transistor and the second transistor. The isolator circuit is coupled to the output switch and is configured to activate the first transistor and the second transistor.

A hybrid diode silicon on insulator front end module and related method are provided. The front end module includes a transmit branch that includes a transmit circuit and a receive branch that includes a receive circuit. The receive circuit includes a low noise amplifier, a pin diode including an anode and a cathode; and a switch. The anode of the pin diode is operatively connected to an antenna switch port and an input voltage source. The cathode of the pin diode is operatively connected to a cathode of the switch. Turning on the switch facilitates a drainage of residual electrical current at the pin diode.