H03K19/00346

OUTPUT DRIVER USING FEEDBACK NETWORK FOR SLEW RATE REDUCTION AND ASSOCIATED OUTPUT DRIVING METHOD
20230238960 · 2023-07-27 · ·

An output driver includes a first pre-driver circuit, a first driver circuit, a second pre-driver circuit, a second driver circuit, and a feedback network. The first pre-driver circuit pre-drives a first data input signal to generate a first pre-driving output signal. The first driver circuit drives the first pre-driving output signal to generate a first data output signal. The second pre-driver circuit pre-drives a second data input signal to generate a second pre-driving output signal, wherein the first data input signal and the second data input signal are a differential input of the output driver. The second driver circuit drives the second pre-driving output signal to generate a second data output signal. The feedback network performs a latching operation upon the first pre-driving output signal and the second pre-driving output signal according to the first data output signal and the second data output signal.

Integrated circuit power supply

An integrated circuit comprises a power input, digital logic circuitry, a plurality of charge stores, and obscuring circuitry. The charge stores are configured to receive power from the power input, are distributed through the digital logic circuitry and are capable of providing power to the digital logic circuitry. The obscuring circuitry is configured to obscure electromagnetic emissions associated with flow of current in current loops between the plurality of charge stores and the digital logic circuitry by switching between a plurality of different charge store activation patterns, wherein each charge store activation pattern describes a different selection of one or more of the plurality of charge stores providing power to the digital logic circuitry at a given time.

VOLTAGE TRACKING CIRCUITS AND ELECTRONIC CIRCUITS

A voltage tracking circuit is provided and includes first and second P-type transistors and a voltage reducing circuit. The drain of the first P-type transistor is coupled to a first voltage terminal. The voltage reducing circuit is coupled between the first voltage terminal and the gate of the first P-type transistor. The voltage reducing circuit reduces a first voltage at the first voltage terminal by a modulation voltage to generate a control voltage and provides the control voltage to the gate of the first P-type transistor. The gate of the second P-type transistor is coupled to the first voltage terminal, and the drain thereof is coupled to a second voltage terminal. The source of the first P-type transistor and the source of the second P-type transistor are coupled to the output terminal of the voltage tracking circuit. The output voltage is generated at the output terminal.

ON-CHIP RESISTOR CORRECTION CIRCUIT

An on-chip resistor correction circuit includes a first MOS transistor connected between VDD and a reference resistor, the other end of the reference resistor being grounded; an operational amplifier for outputting a first control signal based on a reference voltage and a voltage of the reference resistor; a second MOS transistor connected between VDD and a reference node; a branch where each of the on-chip resistors is located is controllably connected between the reference node and ground; a comparator for generating a comparison signal based on the voltage of the reference node and the reference voltage; and a controller for generating a control signal under the action of the comparison signal to control the branch where each of the on-chip resistors is located to turn on or off.

On-chip resistor correction circuit

An on-chip resistor correction circuit includes a first MOS transistor connected between VDD and a reference resistor, the other end of the reference resistor being grounded; an operational amplifier for outputting a first control signal based on a reference voltage and a voltage of the reference resistor; a second MOS transistor connected between VDD and a reference node; a branch where each of the on-chip resistors is located is controllably connected between the reference node and ground; a comparator for generating a comparison signal based on the voltage of the reference node and the reference voltage; and a controller for generating a control signal under the action of the comparison signal to control the branch where each of the on-chip resistors is located to turn on or off.

Glitch power analysis and optimization engine

A switching activity report of simulated switching activities of a semiconductor circuit is accessed. A plurality of glitch bottleneck ratios corresponding to a plurality of pins in the semiconductor circuit are determined, comprising by: setting an initial bottleneck ratio on a leaf output pin; and backward traversing the semiconductor circuit to determine a plurality of glitch bottleneck ratios of pins in a fan-in cone of the leaf output pin. A plurality of total glitch powers associated with the plurality of pins is determined, a total glitch power of the plurality of total glitch powers being determined based on a glitch bottleneck ratio and a glitch power of a corresponding pin. One or more critical bottleneck pins among the plurality of pins are identified based on the plurality of total glitch powers. One or more gates associated with the one or more critical bottleneck pins are adjusted to reduce corresponding one or more total glitch powers of the one or more gates.

SWITCHING FREQUENCY DITHERING METHOD, SWITCHING CIRCUIT AND DC-DC CONVERTER
20220345025 · 2022-10-27 · ·

A switching frequency dithering method, a switching circuit and a DC-DC converter. A switching frequency in the switching frequency dithering method dithers up and down at a third switching frequency or between randomly generated target switching frequencies. The embodiments further provide a switching circuit and a DC-DC converter, which can be used to control a clock signal and optimize comprehensive system performance such as improving system efficiency, reducing noise and ripple, suppressing switching harmonics, and reducing electromagnetic radiation.

NON-ELECTRONIC CONTROL USING PNEUMATICALLY-ACTUATED TRANSISTOR LOGIC

In one aspect, system to form a pneumatically-actuated transistor logic includes a first deformable conduit; a first extensible bladder disposed at a first location along the first conduit; a first structure in proximity with the first bladder and configured to constrain expansion of the first bladder; wherein the first structure and the first bladder are configured to allow flow of fluid through the first conduit when the first bladder is in a first state and to prevent flow of fluid through the first conduit when the first bladder is in a second state.

OUTPUT DRIVING CIRCUIT FOR GENERATING OUTPUT VOLTAGE BASED ON PLURALITY OF BIAS VOLTAGES AND OPERATING METHOD THEREOF
20230082252 · 2023-03-16 · ·

An output driving circuit includes: a plurality of bias voltage generating circuits configured to generate a plurality of bias voltages; a switching control circuit; and an output voltage generating circuit. The switching control circuit is configured to selectively connect one bias voltage generating circuit of the plurality of bias voltage generating circuits to the output voltage generating circuit based on an output voltage. The output voltage generating circuit is configured to transmit and receive a parasitic current generated due to transition of the output voltage to and from the one bias voltage generating circuit selectively connected to the output voltage generating circuit through the switching control circuit.

CROSSTALK CANCELATION STRUCTURES IN SEMICONDUCTOR PACKAGES
20220319980 · 2022-10-06 ·

The embodiments herein are directed to technologies for crosstalk cancellation structures. One semiconductor package includes conductive metal layers separated by insulating layers, the conductive metal layers for routing signals between external package terminals and pads on an integrated circuit device. Signal lines formed in the conductive metal layers have electrode structure (capacitor electrode-like structures) formed for at least adjacent signaling lines of the package terminals. Two of the electrode structures from the adjacent signaling lines are formed opposite each other on different metal layers.