A monotonic counter memory system including a counter circuit and a memory circuit is provided. The counter circuit is configured to increase a count by one in response to a clock signal and output a count value of n bits, where n is a positive integer. The memory circuit includes a plurality of memory cells. The memory circuit is configured to store the count value. The stored count value changes one bit at each input count of the clock signal, and a bit switching time of the stored count value are smaller than 2.sup.n−1 times.

An apparatus, such as a memory (e.g., a NAND memory), can have a controller, a volatile counter coupled to the controller, and a non-volatile memory array coupled to the controller. The controller can be configured to write information, other than a count of the counter, in the array each time the count of the counter has been incremented by a particular number of increments. Counts can be monotonic, non-volatile, and power-loss tolerant.

A circuit for sensing local operating properties of an integrated circuit is disclosed. The circuit may include one or more sensor circuits configured to sense the local operating properties of the integrated circuit. The sensor circuits may receive a supply voltage with a magnitude in a limited range from a digital power supply that is different from the digital power supply that provides power to functional circuits in the integrated circuit. Level shifters may be coupled to the sensor circuits to shift output signals from the sensor circuits to levels that correspond to the digital power supply that provides power to functional circuits in the integrated circuit. Counters and a shift register may be coupled to the level shifters to receive the shifted output signals, the values of which may be used to determine the local operating properties of the integrated circuit as sensed by the sensor circuits.

Disclosed examples include non-volatile counter systems to generate and store a counter value according to a sensor pulse signal, and power circuits to generate first and second supply voltage signals to power first and second power domain circuits using power from the sensor pulse signal, including a switch connected between first and second power domain supply nodes, a boost circuit, and a control circuit to selectively cause the switch to disconnect the first and second power domain circuits from one another after the first supply voltage signal rises above a threshold voltage in a given pulse of the sensor pulse signal, and to cause the boost circuit to boost the second supply voltage signal after the regulator output is disconnected from the second power domain supply node in the given pulse.

A circuit for sensing local operating properties of an integrated circuit is disclosed. The circuit may include one or more sensor circuits configured to sense the local operating properties of the integrated circuit. The sensor circuits may receive a supply voltage with a magnitude in a limited range from a digital power supply that is different from the digital power supply that provides power to functional circuits in the integrated circuit. Level shifters may be coupled to the sensor circuits to shift output signals from the sensor circuits to levels that correspond to the digital power supply that provides power to functional circuits in the integrated circuit. Counters and a shift register may be coupled to the level shifters to receive the shifted output signals, the values of which may be used to determine the local operating properties of the integrated circuit as sensed by the sensor circuits.

Disclosed examples include non-volatile counter systems to generate and store a counter value according to a sensor pulse signal, and power circuits to generate first and second supply voltage signals to power first and second power domain circuits using power from the sensor pulse signal, including a switch connected between first and second power domain supply nodes, a boost circuit, and a control circuit to selectively cause the switch to disconnect the first and second power domain circuits from one another after the first supply voltage signal rises above a threshold voltage in a given pulse of the sensor pulse signal, and to cause the boost circuit to boost the second supply voltage signal after the regulator output is disconnected from the second power domain supply node in the given pulse.

The present disclosure relates to a monotonic counter whose value is represented by a number N of binary words of N memory cells of a non-volatile memory, and being able to implement a step increment operation wherein if only one first memory cell represents a first value different from zero, then a second value equal to the said first value incremented by two times the said step is written into a second memory cell of rank directly higher than the rank of the first memory cell; and if a third and a fourth memory cell of consecutive ranks represent, respectively, a third value and a fourth value different from zero, then the third value of the third memory cell of lower rank is erased.

A circuit for sensing local operating properties of an integrated circuit is disclosed. The circuit may include one or more sensor circuits configured to sense the local operating properties of the integrated circuit. The sensor circuits may receive a supply voltage with a magnitude in a limited range from a digital power supply that is different from the digital power supply that provides power to functional circuits in the integrated circuit. Level shifters may be coupled to the sensor circuits to shift output signals from the sensor circuits to levels that correspond to the digital power supply that provides power to functional circuits in the integrated circuit. Counters and a shift register may be coupled to the level shifters to receive the shifted output signals, the values of which may be used to determine the local operating properties of the integrated circuit as sensed by the sensor circuits.

The present disclosure relates to a monotonic counter whose value is represented by a number N of binary words of N memory cells of a non-volatile memory, and being able to implement a step increment operation wherein if only one first memory cell represents a first value different from zero, then a second value equal to the said first value incremented by two times the said step is written into a second memory cell of rank directly higher than the rank of the first memory cell; and if a third and a fourth memory cell of consecutive ranks represent, respectively, a third value and a fourth value different from zero, then the third value of the third memory cell of lower rank is erased.

A monotonic counter stores N binary words representing a value in N memory cells. When i memory cells of consecutive ranks between k modulo N and k+i modulo N each represent a value complementary to a null value, the counter is incremented by erasing a value of a memory cell of rank k+i+1 modulo N. When i+1 memory cells of consecutive ranks between k+1 modulo N and k+i+1 modulo N each represent the value complementary to the null value, the counter is incremented by incrementing a value of a memory cell of rank k modulo N by two step sizes and storing a result in a memory cell of rank k+1 modulo N, wherein, N is an integer greater than or equal to five, k is an integer, and i is an integer between 2 and N−3.