Provided are integrated circuits that include one or more magnetic tunnel junction ring oscillator(s) with tunable frequency and methods for operating the same. Accordingly, an integrated circuit is provided that includes a ring oscillator. The ring oscillator includes an input voltage terminal, an output voltage terminal, and an odd number of at least three inverters disposed electrically in series with one another between the input voltage terminal and the output voltage terminal. Each of the at least three inverters includes an NMOS transistor and one or more magnetic tunnel junctions (MTJs) disposed electrically in series with the NMOS transistor. The NMOS transistor of each of the at least three inverters is selectively tunable with regard to either or both of its threshold voltage and its effective channel width.

Provided are integrated circuits that include one or more magnetic tunnel junction ring oscillator(s) with tunable frequency and methods for operating the same. Accordingly, an integrated circuit is provided that includes a ring oscillator. The ring oscillator includes an input voltage terminal, an output voltage terminal, and an odd number of at least three inverters disposed electrically in series with one another between the input voltage terminal and the output voltage terminal. Each of the at least three inverters includes an NMOS transistor and one or more magnetic tunnel junctions (MTJs) disposed electrically in series with the NMOS transistor. The NMOS transistor of each of the at least three inverters is selectively tunable with regard to either or both of its threshold voltage and its effective channel width.

A particular apparatus includes a magnetic tunnel junction (MTJ) device and a transistor. The MTJ device and the transistor are included in a comparator that has a hysteresis property associated with multiple transition points that correspond to magnetic switching points of the MTJ device.

A particular apparatus includes a magnetic tunnel junction (MTJ) device and a transistor. The MTJ device and the transistor are included in a comparator that has a hysteresis property associated with multiple transition points that correspond to magnetic switching points of the MTJ device.