A clock generation circuit, equidistant four-phase signal generation method and memory are provided. The circuit includes: a four-phase clock generation circuit for receiving an internal clock signal and complementary clock signal of a memory to which the clock generation circuit belongs, configured to generate a first, second, third and fourth clock signals with the same cycle; a signal delay circuit configured to perform signal delay on the first clock signal, second clock signal, third clock signal and fourth clock signal respectively based on the delay command, herein the delays of the first clock signal, second clock signal, third clock signal and fourth clock signal are different; a signal loading circuit configured to generate a first indication signal and second indication signal; and a test circuit configured to perform a duty cycle test based on the first indication signal and second indication signal to acquire equidistant parallel clock signals.

A clock generation circuit, equidistant four-phase signal generation method and memory are provided. The circuit includes: a four-phase clock generation circuit for receiving an internal clock signal and complementary clock signal of a memory to which the clock generation circuit belongs, configured to generate a first, second, third and fourth clock signals with the same cycle; a signal delay circuit configured to perform signal delay on the first clock signal, second clock signal, third clock signal and fourth clock signal respectively based on the delay command, herein the delays of the first clock signal, second clock signal, third clock signal and fourth clock signal are different; a signal loading circuit configured to generate a first indication signal and second indication signal; and a test circuit configured to perform a duty cycle test based on the first indication signal and second indication signal to acquire equidistant parallel clock signals.

One example includes an Ising machine system. The system includes a plurality of ring oscillators that are each configured to propagate an oscillation signal. Each of the ring oscillators can be cross-coupled with at least one other of the ring oscillators via a respective one of the oscillation signals to provide a respective phase coupling between the respective cross-coupled ring oscillators. The system also includes an Ising machine controller configured to generate control signals corresponding to parameters of an Ising problem and including a plurality of delay selection signals. The Ising machine controller can provide at least one of the delay selection signals to each of the ring oscillators. The delay selection signal can be configured to set a variable propagation delay of the ring oscillator to control the relative phase coupling of each of the ring oscillators to each of the at least one other of the ring oscillators.

One example includes an Ising machine system. The system includes a plurality of ring oscillators that are each configured to propagate an oscillation signal. Each of the ring oscillators can be cross-coupled with at least one other of the ring oscillators via a respective one of the oscillation signals to provide a respective phase coupling between the respective cross-coupled ring oscillators. The system also includes an Ising machine controller configured to generate control signals corresponding to parameters of an Ising problem and including a plurality of delay selection signals. The Ising machine controller can provide at least one of the delay selection signals to each of the ring oscillators. The delay selection signal can be configured to set a variable propagation delay of the ring oscillator to control the relative phase coupling of each of the ring oscillators to each of the at least one other of the ring oscillators.

An overcurrent protection circuit includes: a sampling sub-circuit configured to acquire gate input signals, select a gate input signal with a voltage value greater than a first preset voltage value as a sample gate input signal, generate a first control signal according to the sample gate input signal, and output the first control signal; a delay determination sub-circuit configured to receive the first control signal, delay the first control signal for a first preset time, determine whether a voltage value of the first control signal after delay is less than a voltage value of the first control signal before the delay, and if not, output a counting signal; and a counting control sub-circuit configured to receive the counting signal, perform counting according to the counting signal, and if a counted number reaches a preset number, output a second control signal.

A semiconductor integrated circuit of an embodiment includes: a delay element array circuit in which a plurality of delay elements having a delay amount Tw are connected in series; a flip-flop group including a plurality of flip-flops each of which an input is connected to an output of a corresponding delay element; a delay element group configured to generate, from an input clock signal, a plurality of output clock signals each having a delay difference of a second delay amount smaller than the delay amount Tw; and a delay unit configured to set a third delay amount smaller than the second delay amount, and the delay element group and the delay unit are connected in series between an output terminal of an input signal CLK_DET and an input terminal of the flip-flop group.

A semiconductor integrated circuit of an embodiment includes: a delay element array circuit in which a plurality of delay elements having a delay amount Tw are connected in series; a flip-flop group including a plurality of flip-flops each of which an input is connected to an output of a corresponding delay element; a delay element group configured to generate, from an input clock signal, a plurality of output clock signals each having a delay difference of a second delay amount smaller than the delay amount Tw; and a delay unit configured to set a third delay amount smaller than the second delay amount, and the delay element group and the delay unit are connected in series between an output terminal of an input signal CLK_DET and an input terminal of the flip-flop group.

A method for generating gigahertz bursts of laser pulses is provided, where: 1) time delay T2 of the delayed part with respect to the undelayed part of the input pulse is longer than a time period T1 between said input pulse and the next input pulse; 2) the bursts of output pulses have an incrementally increasing number of pulses; 3) intra-burst pulse separation inside the formed bursts is equal to T3=T2−T1 and corresponds to an ultra-high pulse repetition rate higher than 100 MHz. In another embodiment: 1) T2 is longer than M*T1, where M=2, 3, etc.; 2) output train of bursts is composed of bursts of pulses wherein M adjacent bursts have identical number of pulses; 3) T3 is equal to T3=T2−M*T1. The laser apparatus for implementing the method is provided.

A system comprises a positive voltage supply node and a negative voltage supply node configured for connection to a load, a power source coupled between the positive voltage supply node and the negative voltage supply node, an energy storage device, a solid-state switch, and a control system. The energy storage device and the solid-state switch are connected in series between the positive voltage supply node and the negative voltage supply node. The control system is configured to control activation and deactivation of the solid-state switch to (i) allow the energy storage device to be discharged and supply power to a load, and to (ii) modulate an amount of charging current that flows through the energy storage device from the power source (or load) to recharge the energy storage device.

A system comprises a positive voltage supply node and a negative voltage supply node configured for connection to a load, a power source coupled between the positive voltage supply node and the negative voltage supply node, an energy storage device, a solid-state switch, and a control system. The energy storage device and the solid-state switch are connected in series between the positive voltage supply node and the negative voltage supply node. The control system is configured to control activation and deactivation of the solid-state switch to (i) allow the energy storage device to be discharged and supply power to a load, and to (ii) modulate an amount of charging current that flows through the energy storage device from the power source (or load) to recharge the energy storage device.