Patent classifications
H03K5/05
TECHNIQUES TO REDUCE THE EFFECT OF PAD ASYMMETRY AND SIGNAL ROUTING ON RESOLUTION OF PWM OR PFM SIGNALS
Some examples relate to a system including a pulse modulation (PM) circuit having a PM input and a PM output. The system also includes a load circuit having a load circuit input, and an I/O pad coupling the PM output to the load circuit input. An asymmetry detection circuit has a first asymmetry detection (AD) input coupled to the PM output via a first feedback path, a second AD input coupled to an output node of the I/O pad via a second feedback path, and an AD output coupled to the PM input of the pulse modulation circuit via a control path.
TECHNIQUES TO REDUCE THE EFFECT OF PAD ASYMMETRY AND SIGNAL ROUTING ON RESOLUTION OF PWM OR PFM SIGNALS
Some examples relate to a system including a pulse modulation (PM) circuit having a PM input and a PM output. The system also includes a load circuit having a load circuit input, and an I/O pad coupling the PM output to the load circuit input. An asymmetry detection circuit has a first asymmetry detection (AD) input coupled to the PM output via a first feedback path, a second AD input coupled to an output node of the I/O pad via a second feedback path, and an AD output coupled to the PM input of the pulse modulation circuit via a control path.
Clock generation circuit, equidistant four-phase signal generation method, and memory
A clock generation circuit, equidistant four-phase signal generation method and memory are provided. The circuit includes: a four-phase clock generation circuit for receiving an internal clock signal and complementary clock signal of a memory to which the clock generation circuit belongs, configured to generate a first, second, third and fourth clock signals with the same cycle; a signal delay circuit configured to perform signal delay on the first clock signal, second clock signal, third clock signal and fourth clock signal respectively based on the delay command, herein the delays of the first clock signal, second clock signal, third clock signal and fourth clock signal are different; a signal loading circuit configured to generate a first indication signal and second indication signal; and a test circuit configured to perform a duty cycle test based on the first indication signal and second indication signal to acquire equidistant parallel clock signals.
Clock generation circuit, equidistant four-phase signal generation method, and memory
A clock generation circuit, equidistant four-phase signal generation method and memory are provided. The circuit includes: a four-phase clock generation circuit for receiving an internal clock signal and complementary clock signal of a memory to which the clock generation circuit belongs, configured to generate a first, second, third and fourth clock signals with the same cycle; a signal delay circuit configured to perform signal delay on the first clock signal, second clock signal, third clock signal and fourth clock signal respectively based on the delay command, herein the delays of the first clock signal, second clock signal, third clock signal and fourth clock signal are different; a signal loading circuit configured to generate a first indication signal and second indication signal; and a test circuit configured to perform a duty cycle test based on the first indication signal and second indication signal to acquire equidistant parallel clock signals.
INPUT SAMPLING METHOD AND CIRCUIT, MEMORY AND ELECTRONIC DEVICE
An input sampling method includes the following: acquiring a first pulse signal and a second pulse signal respectively; widening a pulse width of the first pulse signal to obtain a widened first pulse signal; shielding an invalid signal in the second pulse signal based on the widened first pulse signal to obtain a to-be-sampled signal; and finally, sampling the to-be-sampled signal based on a clock signal. In this way, prior to signal sampling, the invalid signal is shielded to avoid additional power consumption caused by sampling the invalid signal, and at the same time, the pulse width of the signal is widened to avoid sampling failure.
INPUT SAMPLING METHOD AND CIRCUIT, MEMORY AND ELECTRONIC DEVICE
An input sampling method includes the following: acquiring a first pulse signal and a second pulse signal respectively; widening a pulse width of the first pulse signal to obtain a widened first pulse signal; shielding an invalid signal in the second pulse signal based on the widened first pulse signal to obtain a to-be-sampled signal; and finally, sampling the to-be-sampled signal based on a clock signal. In this way, prior to signal sampling, the invalid signal is shielded to avoid additional power consumption caused by sampling the invalid signal, and at the same time, the pulse width of the signal is widened to avoid sampling failure.
SIGNAL GENERATING CIRCUIT AND METHOD, AND SEMICONDUCTOR MEMORY
A signal generating circuit includes the following: a clock circuit, configured to receive an external clock signal to generate an internal clock signal; a controlling circuit, configured to generate a control signal according to the frequency of the external clock signal; and a generating circuit, connected with the clock circuit and the controlling circuit respectively, and configured to receive the internal clock signal, the control signal and a flag signal to generate a target signal. When the flag signal changes from a first level to a second level, the target signal is changed from a third level to a fourth level, and after the target signal maintains the fourth level for a target time length, the target signal is changed from the fourth level to the third level. The generating circuit is further configured to determine the target time length according to the internal clock signal and the control signal.
SLEW RATE CONTROL DEVICE AND SLEW RATE CONTROL METHOD
A slew rate control device and a slew rate control method are provided. The slew rate control device includes a signal generating circuit, a comparator circuit, and a control circuit. The signal generating circuit generates a first voltage signal and a second voltage signal having a slew rate, and the first voltage signal and the second voltage signal are a pair of differential signals. The comparator circuit outputs an enabling signal according to a relative positional relationship between an eye crossing point of the pair of differential signals and a signal edge of a reference clock. The control circuit generates at least one control signal according to the enabling signal to control the signal generating circuit, such that the signal generating circuit changes the slew rate of the first voltage signal and the second voltage signal according to the at least one control signal.
SLEW RATE CONTROL DEVICE AND SLEW RATE CONTROL METHOD
A slew rate control device and a slew rate control method are provided. The slew rate control device includes a signal generating circuit, a comparator circuit, and a control circuit. The signal generating circuit generates a first voltage signal and a second voltage signal having a slew rate, and the first voltage signal and the second voltage signal are a pair of differential signals. The comparator circuit outputs an enabling signal according to a relative positional relationship between an eye crossing point of the pair of differential signals and a signal edge of a reference clock. The control circuit generates at least one control signal according to the enabling signal to control the signal generating circuit, such that the signal generating circuit changes the slew rate of the first voltage signal and the second voltage signal according to the at least one control signal.
SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
A semiconductor memory device includes a mode register set and a clock correction circuit. The mode register set stores a first control code set. During a duty training interval based on a duty training command, the clock correction circuit may divide the duty training interval into a first interval, a second interval and a third interval which are consecutive, may correct a phase skew of a first clock signal and a third clock signal during the first interval, may correct a phase skew of a second clock signal and a fourth clock signal during the second interval, and may correct a phase skew of the first clock signal and the fourth clock signal during the third interval. The semiconductor memory device may enhance signal integrity of clock signals by correcting duty errors and phase skews of the clock signals having multi-phases during the duty training interval.