A memory controller includes an interface and a processor. The interface communicates with memory cells organized in multiple Word Lines (WLs). The processor is configured to read a Code Word (CW) of an Error Correction Code (ECC) from a group of multiple memory cells belonging to a target WL, to calculate for a given memory cell (i) a first soft metric, depending on a first threshold voltage of a first neighbor memory cell in a first WL neighboring the target WL, and (ii) a second soft metric, depending on a second threshold voltage of a second neighbor memory cell in a second WL neighboring the target WL, to calculate a combined soft metric based on both the first and second soft metrics and assign the combined soft metric to the given memory cell, and to decode the CW based on the combined soft metric, to produce a decoded CW.

A memory controller includes an interface and a processor. The interface communicates with memory cells organized in multiple Word Lines (WLs). The processor is configured to read a Code Word (CW) of an Error Correction Code (ECC) from a group of multiple memory cells belonging to a target WL, to calculate for a given memory cell (i) a first soft metric, depending on a first threshold voltage of a first neighbor memory cell in a first WL neighboring the target WL, and (ii) a second soft metric, depending on a second threshold voltage of a second neighbor memory cell in a second WL neighboring the target WL, to calculate a combined soft metric based on both the first and second soft metrics and assign the combined soft metric to the given memory cell, and to decode the CW based on the combined soft metric, to produce a decoded CW.

Hierarchical coding architectures and schemes based on multistage concatenated codes are described. For instance, multiple encoder and decoder hierarchies may be implemented along with use of corresponding stages of concatenated codes. The coding scheme generally includes an inner coding scheme (e.g., a polar coding scheme, such as a hybrid polar code or Bose Chaudhuri and Hocquenghem (BCH) code), an outer coding scheme (e.g., a Reed-Solomon (RS) coding scheme), and one or more middle coding schemes. The inner coding scheme is based on a polarization transformation (e.g., polar codes with cyclic redundancy check (CRC) codes, polar codes with dynamic freezing codes, polarization-adjusted convolutional (PAC) codes, etc.) which allows for embedding parity data from an outer code inside a codeword along with the user data. The outer coding scheme has a similar concatenated structure (e.g., of an inner RS code with an outer RS code).

Hierarchical coding architectures and schemes based on multistage concatenated codes are described. For instance, multiple encoder and decoder hierarchies may be implemented along with use of corresponding stages of concatenated codes. The coding scheme generally includes an inner coding scheme (e.g., a polar coding scheme, such as a hybrid polar code or Bose Chaudhuri and Hocquenghem (BCH) code), an outer coding scheme (e.g., a Reed-Solomon (RS) coding scheme), and one or more middle coding schemes. The inner coding scheme is based on a polarization transformation (e.g., polar codes with cyclic redundancy check (CRC) codes, polar codes with dynamic freezing codes, polarization-adjusted convolutional (PAC) codes, etc.) which allows for embedding parity data from an outer code inside a codeword along with the user data. The outer coding scheme has a similar concatenated structure (e.g., of an inner RS code with an outer RS code).

A controller including a non-volatile memory interface circuit connected to at least one non-volatile memory device and configured to control the at least one non-volatile memory device; an error correction circuit configured to perform an error correction operation on a codeword received from the non-volatile memory interface circuit according to an error correction decoding level from among a plurality of error correction decoding levels, wherein the non-volatile memory interface circuit is further configured to: receive side information from the at least one non-volatile memory device; predict a distribution of memory cells based on the side information; and select the error correction decoding level from among the plurality of error correction decoding levels according to the predicted distribution.

A controller including a non-volatile memory interface circuit connected to at least one non-volatile memory device and configured to control the at least one non-volatile memory device; an error correction circuit configured to perform an error correction operation on a codeword received from the non-volatile memory interface circuit according to an error correction decoding level from among a plurality of error correction decoding levels, wherein the non-volatile memory interface circuit is further configured to: receive side information from the at least one non-volatile memory device; predict a distribution of memory cells based on the side information; and select the error correction decoding level from among the plurality of error correction decoding levels according to the predicted distribution.

Methods and transceivers transmit communication frames that comprise a sequence of N symbols, ensuing payload header symbols, and ensuing payload message symbols. The sequence of N symbols encodes information according to signal-to-noise ratio associated with the communication frame.

One example of layer-by-layer error correction can include iteratively error correcting the codeword on a layer-by-layer basis with the first error correction circuit in a first mode and determining on the layer-by-layer basis whether a number of parity errors in a particular layer is less than a threshold number of parity errors. The codeword can be transferred to a second error correction circuit when the number of parity errors is less than the threshold number of parity errors. The codeword can be iteratively error corrected with the first error correction circuit in a second mode when the number of parity errors is at least the threshold number of parity errors. The threshold number of parity errors can be at least partially based on an adjustable code rate of the first error correction circuit or the second error correction circuit.

Methods, systems, and devices for operating memory cell(s) using a direct-input column redundancy scheme are described. A device that has read data from data planes may replace data from one of the planes with redundancy data from a data plane storing redundancy data. The device may then provide the redundancy data to an error correction circuit coupled with the data plane that stored the redundancy data. An output of the error correction circuit may be used to generate syndrome bits, which may be decoded by a syndrome decoder. The syndrome decoder may indicate whether a bit of the data should be corrected by selectively reacting to inputs based on the type of data to be corrected. For example, the syndrome decoder may react to a first set of inputs if the data bit to be corrected is a regular data bit, and react to a second set of inputs if the data bit to be corrected is a redundant data bit.

Methods, systems, and devices for operating memory cell(s) using a direct-input column redundancy scheme are described. A device that has read data from data planes may replace data from one of the planes with redundancy data from a data plane storing redundancy data. The device may then provide the redundancy data to an error correction circuit coupled with the data plane that stored the redundancy data. An output of the error correction circuit may be used to generate syndrome bits, which may be decoded by a syndrome decoder. The syndrome decoder may indicate whether a bit of the data should be corrected by selectively reacting to inputs based on the type of data to be corrected. For example, the syndrome decoder may react to a first set of inputs if the data bit to be corrected is a regular data bit, and react to a second set of inputs if the data bit to be corrected is a redundant data bit.