An image sensor is provided. The image sensor includes: a pixel array including a plurality of pixel groups arranged in a Bayer pattern; a row driver connected to a row of the pixel array; and a readout circuit configured to sample a pixel signal from the pixel array, to compare the sampled pixel signal with a ramp signal, and to generate a digital image signal based on a comparison of the pixel signal and the ramp signal. A pixel group of the plurality of pixel groups includes sixteen sub-pixels arranged in a 4×4 array, the 4×4 array includes a plurality of readout areas, and the plurality of readout areas are activated alternately with each other. In each of the plurality of readout areas in the pixel group, micro lenses are arranged asymmetrically with each other.

An image sensor is provided. The image sensor includes: a pixel array including a plurality of pixel groups arranged in a Bayer pattern; a row driver connected to a row of the pixel array; and a readout circuit configured to sample a pixel signal from the pixel array, to compare the sampled pixel signal with a ramp signal, and to generate a digital image signal based on a comparison of the pixel signal and the ramp signal. A pixel group of the plurality of pixel groups includes sixteen sub-pixels arranged in a 4×4 array, the 4×4 array includes a plurality of readout areas, and the plurality of readout areas are activated alternately with each other. In each of the plurality of readout areas in the pixel group, micro lenses are arranged asymmetrically with each other.

An image sensing device includes a pixel array including image sensing pixels, phase detection pixel pairs disposed between the image sensing pixels, photoelectric conversion regions corresponding to the image sensing pixels and the phase detection pixels, device isolation structures isolating the photoelectric conversion regions, color filters corresponding to the image sensing pixels and the phase detection pixel pairs, a first grid structure disposed between a color filter of a first image sensing pixel and a color filter of an adjacent first phase detection pixel pair and shifted by a first distance from a first device isolation structure disposed between the first image sensing pixel and the first phase detection pixel pair, and a second grid structure disposed in color filters of the first phase detection pixel pair and shifted by a second distance from a second device isolation structure disposed between the first phase detection pixel pairs.

An image sensing device includes a pixel array including image sensing pixels, phase detection pixel pairs disposed between the image sensing pixels, photoelectric conversion regions corresponding to the image sensing pixels and the phase detection pixels, device isolation structures isolating the photoelectric conversion regions, color filters corresponding to the image sensing pixels and the phase detection pixel pairs, a first grid structure disposed between a color filter of a first image sensing pixel and a color filter of an adjacent first phase detection pixel pair and shifted by a first distance from a first device isolation structure disposed between the first image sensing pixel and the first phase detection pixel pair, and a second grid structure disposed in color filters of the first phase detection pixel pair and shifted by a second distance from a second device isolation structure disposed between the first phase detection pixel pairs.

Devices, methods, and systems for detecting false color in an image. An edge preserving filter is applied to an image sensor output to generate a first demosaiced image. A low pass filter is applied to the image sensor output to generate a second demosaiced image. A hue difference between the first demosaiced image and the second demosaiced image is calculated. A false color region is detected responsive to the hue difference exceeding a threshold hue difference.

An image sensor includes imaging pixels and a patterned liquid crystal polarizer (LCP). The imaging pixel include subpixels. The patterned LCP is disposed over the subpixels and configured to direct a particular polarized portion of imaging light to particular subpixels.

An image sensing device includes a pixel array including image sensing pixels, phase detection pixel pairs disposed between the image sensing pixels, photoelectric conversion regions corresponding to the image sensing pixels and the phase detection pixels, device isolation structures isolating the photoelectric conversion regions, color filters corresponding to the image sensing pixels and the phase detection pixel pairs, a first grid structure disposed between a color filter of a first image sensing pixel and a color filter of an adjacent first phase detection pixel pair and shifted by a first distance from a first device isolation structure disposed between the first image sensing pixel and the first phase detection pixel pair, and a second grid structure disposed in color filters of the first phase detection pixel pair and shifted by a second distance from a second device isolation structure disposed between the first phase detection pixel pairs.

An image sensing device includes a pixel array including image sensing pixels, phase detection pixel pairs disposed between the image sensing pixels, photoelectric conversion regions corresponding to the image sensing pixels and the phase detection pixels, device isolation structures isolating the photoelectric conversion regions, color filters corresponding to the image sensing pixels and the phase detection pixel pairs, a first grid structure disposed between a color filter of a first image sensing pixel and a color filter of an adjacent first phase detection pixel pair and shifted by a first distance from a first device isolation structure disposed between the first image sensing pixel and the first phase detection pixel pair, and a second grid structure disposed in color filters of the first phase detection pixel pair and shifted by a second distance from a second device isolation structure disposed between the first phase detection pixel pairs.

An image sensor has a plurality of pixels arranged in a row direction and in a column direction. Each pixel comprises a color filter that has a portion with a low transmissivity and a portion with a high transmissivity, and a photoelectric conversion element that includes a first photoelectric conversion cell which receives light transmitting through the portion with the low transmissivity of the color filter, and a second photoelectric conversion cell which receives light transmitting through the portion with the high transmissivity of the color filter. The plurality of pixels are arranged such that positions of the portions with the low transmissivity for pixels of one color are identical among the plurality of pixels, and the portions with the low transmissivity are positioned adjacent to each other between adjacent pixels of different colors in the row direction only.

An electrode structure including a top electrode and a bottom electrode located below the top electrode. The top electrode includes a plurality of inner electrodes and an outer electrode connected with the inner electrodes. The inner electrodes are configured to filter a light by wavelength range and filter the light into a polarized light. The inner electrodes extend along a first direction. Each of the inner electrodes includes a metal structure having a first portion and a second portion and a dielectric structure located between the first portion and the second portion of the metal structure. The first portion, the dielectric structure, and the second portion are arranged along a second direction perpendicular to the first direction.