Object detection is performed for an image acquired by imaging using an array sensor in which a plurality of imaging elements are arranged one-dimensionally or two-dimensionally, some of the imaging elements are configured as color-filter-disposed pixels in which a color filter is disposed in an incident optical path, and color information acquisition points are formed by the color-filter-disposed pixels. Then, coloring processing in a pixel range of a detected object is performed by referring to color information acquired at the color information acquisition points corresponding to the inside of the pixel range of the detected object.

The disclosure extends to methods, systems, and computer program products for producing an image in light deficient environments with luminance and chrominance emitted from a controlled light source.

An image sensor includes a pixel defining pattern in a mesh form. A first division pattern divides a pixel area into two halves. A second division pattern divides the pixel area into two halves. A first diagonal division pattern divides the pixel area into two halves. A second diagonal division pattern divides the pixel area into two halves. First through eighth photodiodes are arranged in the pixel area.

An image sensor includes a pixel defining pattern in a mesh form. A first division pattern divides a pixel area into two halves. A second division pattern divides the pixel area into two halves. A first diagonal division pattern divides the pixel area into two halves. A second diagonal division pattern divides the pixel area into two halves. First through eighth photodiodes are arranged in the pixel area.

The present disclosure relates to a solid state image sensor and electronic equipment that enable degradation in image quality of a captured image to be suppressed even if any pixel in a pixel array is configured as a functional pixel for obtaining desired information in order to obtain information different from a normal image. In a plurality of pixels constituting subblocks provided in an RGB Bayer array constituting a block which is a set of color units, normal pixels that capture a normal image are arranged longitudinally and laterally symmetrically within the subblock, and functional pixels for obtaining desired information other than capturing an image are arranged at the remaining positions. The present disclosure can be applied to a solid state image sensor.

An imaging device according to an embodiment includes: a plurality of pixels (110) each including a photoelectric conversion element (20) and arranged in an array of matrix; a control line group (16) including a plurality of control lines for controlling each of pixels aligned in a row direction, each arranged in each of rows of the array; and a plurality of reading lines (VSL) arranged in each of columns for transferring a pixel signal read from each of pixels aligned in a column direction of the array, wherein the plurality of pixels includes: a first pixel (110GS) controlled by a control signal supplied from a first control line group including control lines in a first number among a plurality of control lines included in the control line group in each of pixels aligned in the row direction in at least one of rows of the array; and a second pixel (110RS) controlled by a control signal supplied from a second control line group including a control line in a second number smaller than the first number among a plurality of control lines included in the control line group.

Provided is an image sensor including a color separating lens array. The image sensor includes a sensor substrate including a first pixel configured to sense first wavelength light, and a second pixel configured to sense second wavelength light; and a color separating lens array including a first wavelength light condensing region in which the first wavelength light is condensed onto the first pixel, wherein an area of the first wavelength light condensing region is greater than an area of the first pixel, and a distance between the sensor substrate and the color separating lens array is less than a focal distance of the first wavelength light condensing region with respect to the first wavelength light.

Provided is an image sensor including a color separating lens array. The image sensor includes a sensor substrate including a first pixel configured to sense first wavelength light, and a second pixel configured to sense second wavelength light; and a color separating lens array including a first wavelength light condensing region in which the first wavelength light is condensed onto the first pixel, wherein an area of the first wavelength light condensing region is greater than an area of the first pixel, and a distance between the sensor substrate and the color separating lens array is less than a focal distance of the first wavelength light condensing region with respect to the first wavelength light.

An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.

An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.