A photosensitive sensor is capable of operating in a global shutter mode and in a rolling shutter mode. The sensor includes at least one pixel with a photosensitive region configured to photogenerate charges. A first transfer gate is configured to transfer photogenerated charges from the photosensitive region to a transfer node. A source-follower transistor is configured to transmit a reading signal to a read node, in the global shutter mode, in a manner controlled by a potential of the photogenerated charges on the transfer node. A second transfer gate is configured to transfer the photogenerated charges from the photosensitive region to the read node in the rolling shutter mode.

There is provided in one embodiment an apparatus having an image sensor array. In one embodiment, the image sensor array can include monochrome pixels and color sensitive pixels. The monochrome pixels can be pixels without wavelength selective color filter elements. The color sensitive pixels can include wavelength selective color filter elements.

There is provided in one embodiment an apparatus having an image sensor array. In one embodiment, the image sensor array can include monochrome pixels and color sensitive pixels. The monochrome pixels can be pixels without wavelength selective color filter elements. The color sensitive pixels can include wavelength selective color filter elements.

An image sensor including: first and second capacitors; a first transistor between a photodiode and a floating diffusion node, and receiving a transfer signal; a second transistor between a first power terminal and the floating diffusion node and receiving a reset signal; a third transistor between a second power terminal and a first node and having a gate connected to the floating diffusion node; a fourth transistor between the first node and a column line and receiving a precharge signal; a fifth transistor between the first capacitor and a feedback node and receiving a first sampling signal; a sixth transistor between the second capacitor and feedback node and receiving a second sampling signal; a seventh transistor between the first node and feedback node and receiving a first switch signal; and an eighth transistor between the floating diffusion and feedback nodes and receiving a second switch signal.

Proposed are an organic-inorganic composite synthetic resin using a highly flame-retardant organically modified nanoparticle, and a production method thereof. The method for producing the organic-inorganic composite synthetic resin using a highly flame-retardant organically modified nanoparticle includes the steps of: adding and stirring metal ion-based phosphinate, melamine cyanurate, and nanoclay to a container containing an aqueous or oily solvent, applying ultrasonic waves and high pressure energy to the stirred solution to prepare a highly flame-retardant organically modified silicate solution through a chemical bonding, and then adding a synthetic resin to form synthetic leather and foam used as life consumer goods to the silicate solution, processing and drying it.

There is provided in one embodiment an apparatus having an image sensor array. In one embodiment, the image sensor array can include monochrome pixels and color sensitive pixels. The monochrome pixels can be pixels without wavelength selective color filter elements. The color sensitive pixels can include wavelength selective color filter elements.

An imaging device that can obtain imaging data corresponding to high-resolution images in a short period of time is provided. The imaging device includes a pixel including a photoelectric conversion element and n (n is an integer more than 2 inclusive) retention circuits. The photoelectric conversion element and the n retention circuits are stacked. One electrode of the photoelectric conversion element is electrically connected to the first to n-th retention circuits. The retention circuits include OS transistors with an extremely low off-state current feature, and can retain imaging data for a long time. In the first to n-th periods, the imaging device obtains the first to n-th imaging data and retains it in the first to n-th retention circuits. Then, the first to n-th imaging data retained in the first to n-th retention circuits are read out. The read imaging data is output outside the imaging data through AD conversion.

An integrated circuit comprises a substrate composed of crystalline semiconductor. An optoelectronic device is formed at the substrate and includes a plurality of transducers. A thin-film semiconductor layer is situated over the optical device, and circuitry is formed at the thin-film semiconductor layer. The circuitry may include a plurality of transistors electrically coupled to the optoelectronic device by a set of layer interconnects.

An integrated circuit comprises a substrate composed of crystalline semiconductor. An optoelectronic device is formed at the substrate and includes a plurality of transducers. A thin-film semiconductor layer is situated over the optical device, and circuitry is formed at the thin-film semiconductor layer. The circuitry may include a plurality of transistors electrically coupled to the optoelectronic device by a set of layer interconnects.

There is provided in one embodiment an apparatus having an image sensor array. In one embodiment, the image sensor array can include monochrome pixels and color sensitive pixels. The monochrome pixels can be pixels without wavelength selective color filter elements. The color sensitive pixels can include wavelength selective color filter elements.