The present technology relates to an imaging element and an electronic device capable of preventing light from leaking into an adjacent pixel. A semiconductor layer in which a first pixel in which a read pixel signal is used to generate an image, and a second pixel in which the read pixel signal is not used to generate an image are arranged, and a wiring layer stacked on the semiconductor layer are provided, and a structure of the first pixel and a structure of the second pixel are different. A first inter-pixel separation portion that separates the semiconductor layer of the adjacent first pixels, and a second inter-pixel separation portion that separates the semiconductor layer of the adjacent second pixels are further provided, and the first inter-pixel separation portion and the second inter-pixel separation portion are provided with different structures. The present technology can be applied to an imaging element in which dummy pixels are arranged.

The present technology relates to an imaging element and an electronic device capable of preventing light from leaking into an adjacent pixel. A semiconductor layer in which a first pixel in which a read pixel signal is used to generate an image, and a second pixel in which the read pixel signal is not used to generate an image are arranged, and a wiring layer stacked on the semiconductor layer are provided, and a structure of the first pixel and a structure of the second pixel are different. A first inter-pixel separation portion that separates the semiconductor layer of the adjacent first pixels, and a second inter-pixel separation portion that separates the semiconductor layer of the adjacent second pixels are further provided, and the first inter-pixel separation portion and the second inter-pixel separation portion are provided with different structures. The present technology can be applied to an imaging element in which dummy pixels are arranged.

To improve the image quality of image data in a solid-state imaging device that reads a signal according to a potential difference between respective floating diffusion regions of a pair of pixels. A pixel unit is provided with a plurality of rows each including a plurality of pixels. A readout row selection unit selects any of the plurality of rows as a readout row every time a predetermined period elapses, and causes each of the plurality of pixels in the readout row to generate a signal potential according to a received light amount. A reference row selection unit selects a row different from a previous row from among the plurality of rows as a current reference row every time the predetermined period elapses, and causes each of the plurality of pixels in the reference row to generate a predetermined reference potential. A readout circuit unit reads a voltage signal according to a difference between the signal potential and the reference potential.

An imaging device including pixels including a first pixel and a second pixel, the pixels arranged in rows and columns, the first pixel belonging to a first column, the second pixel belonging to a second column adjacent the first column; a first signal path through which a signal from the first pixel flows; and a second signal path through which a signal from the second pixel flows, a first circuit including first and second lines, a first voltage being applied to the first lines, a second voltage different from the first voltage applied to the second lines. The first signal path is located in a region closer to one of the first lines than any of the second lines in a plan view, and the second signal path is located in a region closer to one of the second lines than any of the first lines in the plan view.

A pixel portion includes photodiodes formed on a semiconductor substrate as photoelectric conversion portions, and includes: a high absorption layer (HA layer) for controlling a reflection component of incident light on one surface side of the photodiodes (photoelectric conversion portions), and re-diffusing the incident light in the photoelectric conversion portions, on one surface side of the photodiodes upon which light is incident; and a diffused light suppression structure for suppressing diffused light (caused by light scattering) in a light incident path toward one surface side of the photoelectric conversion portions including the high absorption layer. Due to this, a solid-state imaging apparatus capable of reducing crosstalk between pixels, achieving miniaturization of pixel size, reducing color mixing, and achieving high sensitivity and high performance can be realized.

An image sensing device includes a first test block, a second test block, and a readout block. The first test block includes a plurality of first image sensing pixels structured to convert incident light carrying an image into a first pixel signal indicative of the image, and a first heating element structured to transmit heat to the first image sensing pixels. The second test block includes a plurality of second image sensing pixels that each include a light blocking structure to be shielded from receiving incident light to generate a second pixel signal without being directly exposed to the incident light, and a second heating element structured to transmit heat to the second image sensing pixels. The readout block processes the first pixel signal output from the first test block and the second pixel signal output from the second test block.

A photoelectric conversion apparatus comprising a pixel array and a signal processor is provided. The pixel array is configured to be operable in driving modes in which different signal readout methods are used. The signal processor comprises a selector configured to select, based on the driving mode set for each pixel among the driving modes, a first pixel group and a second pixel group from regions of the pixel array, which have been designated to generate a correction value, a correction value generator configured to generate the correction value in accordance with a first representative value based on signals read out from the first pixel group and a second representative value based on signals read out from the second pixel group, and a corrector configured to correct, based on the correction value, the signal read out from the pixel array.

To control an excess bias to an appropriate value in a light detection device. A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.

Pixel values are read out of an OB pixel region under a predetermined exposure condition, and predetermined processing is performed on the pixel values to derive a dark current component value. The dark current component value of a segmented pixel region is estimated from the OB dark current component value by taking into account the difference between the exposure conditions of the OB pixel region and the segmented pixel region. Specifically, a conversion ratio for calculating the dark current component value from the OB dark current component value is derived based on the ratios between exposure time and gain in the exposure conditions of the two pixel regions. This conversion ratio is applied to the pixel values of the OB pixel region or the OB dark current component value calculated from them to thereby calculate an estimated dark current component value for the exposure condition of the segmented pixel region.

To improve the image quality of image data in a solid-state imaging device that reads a signal according to a potential difference between respective floating diffusion regions of a pair of pixels.

A pixel unit is provided with a plurality of rows each including a plurality of pixels. A readout row selection unit selects any of the plurality of rows as a readout row every time a predetermined period elapses, and causes each of the plurality of pixels in the readout row to generate a signal potential according to a received light amount. A reference row selection unit selects a row different from a previous row from among the plurality of rows as a current reference row every time the predetermined period elapses, and causes each of the plurality of pixels in the reference row to generate a predetermined reference potential. A readout circuit unit reads a voltage signal according to a difference between the signal potential and the reference potential.