The invalid pixel detection unit 32 detects an invalid pixel from a non-polarized image and a plurality of polarized images for different polarization directions obtained by performing image pickup using the polarization image pickup unit 20. For example, the invalid pixel detection unit 32 detects a saturated pixel having a pixel value larger than a preset saturation detection threshold and a black-crushed pixel having a pixel value smaller than a preset black crushing detection threshold as invalid pixels from a non-polarized image. The polarization information generation unit 33 performs processing of generating polarization information on the basis of the non-polarized image and polarized images and switches the processing of generating the polarization information depending on the detection result of the invalid pixels in the invalid pixel detection unit 32, so as to generate the polarization information without using the invalid pixels. Correct polarization information can be acquired.

A solid-state imaging element (100) includes a first photoelectric conversion unit and a second photoelectric conversion unit (600). The first and second photoelectric conversion units (500, 600) are joined at joint surfaces facing each other, and include an upper electrode (502, 602), a lower electrode (508A, 608), a photoelectric conversion film (504, 604), and a storage electrode (510, 610). The lower electrode (508A) of the first photoelectric conversion unit (500) is connected to a charge storage unit (314) via a first through electrode (460A, 460B) penetrating a semiconductor substrate (300). The lower electrode (608) of the second photoelectric conversion unit (600) is connected to the charge storage unit (314) via: a second electrode (673) provided on a joint surface of the second photoelectric conversion unit (600); a first electrode (573) provided on a joint surface of the first photoelectric conversion unit (500); a second through electrode (560) penetrating the first photoelectric conversion unit (500); and the first through electrode (460A, 460B).

An image sensor may include a pixel array a pixel array including an active pixel and an optical black pixel, the active pixel configured to generate a first pixel signal, and the optical black pixel configured to generate a second pixel signal, a first biasing circuit configured to bias the first pixel signal based on a first bias voltage, a first analog-to-digital converter configured to convert the biased first pixel signal into a first digital signal, a second biasing circuit configured to bias the second pixel signal based on a second bias voltage, and a second analog-to-digital converter configured to convert the biased second pixel signal into a second digital signal, the second digital signal configured to generate smaller random noise than the first analog-to-digital converter.

The present disclosure relates to a solid state image sensor and electronic equipment that enable degradation in image quality of a captured image to be suppressed even if any pixel in a pixel array is configured as a functional pixel for obtaining desired information in order to obtain information different from a normal image. In a plurality of pixels constituting subblocks provided in an RGB Bayer array constituting a block which is a set of color units, normal pixels that capture a normal image are arranged longitudinally and laterally symmetrically within the subblock, and functional pixels for obtaining desired information other than capturing an image are arranged at the remaining positions. The present disclosure can be applied to a solid state image sensor.

The present disclosure relates to a solid state image sensor and electronic equipment that enable degradation in image quality of a captured image to be suppressed even if any pixel in a pixel array is configured as a functional pixel for obtaining desired information in order to obtain information different from a normal image. In a plurality of pixels constituting subblocks provided in an RGB Bayer array constituting a block which is a set of color units, normal pixels that capture a normal image are arranged longitudinally and laterally symmetrically within the subblock, and functional pixels for obtaining desired information other than capturing an image are arranged at the remaining positions. The present disclosure can be applied to a solid state image sensor.

In one example, an imaging device including a plurality of pixel circuits, a first control line, a second control line, a first voltage supply line, a second voltage supply line, a first light-receiving element, and a diagnosis unit is disclosed. The pixel circuits each include a first terminal, a second terminal, a third terminal, an accumulation unit, a first transistor, a second transistor, and an output unit. The first transistor is couples the third terminal to the accumulation unit on the basis of a voltage of the first terminal. The second transistor supplies a predetermined voltage to the accumulation unit on the basis of a voltage of the second terminal. The output unit outputs a signal corresponding to a voltage in the accumulation unit.

An imaging system according to the present disclosure includes: an imaging device that is mounted in a vehicle, and captures and generates an image of a peripheral region of the vehicle; and a processing device that is mounted in the vehicle, and executes processing related to a function of controlling the vehicle on the basis of the image. The imaging device includes: a first control line, a first voltage generator that applies a first voltage to the first control line, a first signal line, a plurality of pixels that applies a pixel voltage to the first signal line, a first dummy pixel that applies a voltage corresponding to the first voltage of the first control line to the first signal line in a first period, a converter including a first converter that performs AD conversion on the basis of a voltage of the first signal line in the first period to generate a first digital code, and a diagnosis section that performs diagnosis processing on the basis of the first digital code. The above-described processing device restricts the function of controlling the vehicle on the basis of a result of the diagnosis processing.

An image pickup apparatus includes an image sensor including a plurality of normal pixels and OB pixels obtained by dividing each pixel into n, and an image processing circuit. The image sensor can read each pixel row in a first read mode in which a pixel signal is generated and read or in a second read mode in which n signals relating to n divided pixel signals are read in n rows. The image processing circuit performs processing on signals read in the first and second read modes to generate image data and performs OB level correction processing on a normal pixel signal read from the normal pixels in the second read mode using an OB pixel signal read from the OB pixels in the first and second read modes.

An image sensor and an operating method of the image sensor may include a pixel array including a plurality of pixels; a controller configured to generate a pre-shutter driving signal associated with a pre-shutter operation, the pre-shutter driving signal generated before a first shutter operation and a first read operation corresponding to photographing a first frame is performed; a row driver configured to drive first control signals to the pixel array based on the pre-shutter driving signal, the first control signals associated with the pre-shutter operation; and the pixel array is configured to perform the pre-shutter operation in response to the first control signals, wherein levels of the first control signals correspond to levels of second control signals, the second control signals associated with the first read operation.

There is provided a solid-state image pickup element including: a photodiode configured to convert incident light into a photocurrent; an amplification transistor configured to amplify a voltage between a gate having a potential depending on the photocurrent and a source having a predetermined reference potential and output the amplified voltage from a drain; and a potential supply section configured to supply an anode of the photodiode and a back-gate of the amplification transistor with a predetermined potential lower than the reference potential.