A semiconductor device according to the present disclosure includes: a first charge accumulation unit capable of accumulating a charge; a first initialization unit that is connected to the first charge accumulation unit and initializes the first charge accumulation unit; and a first voltage switching unit that is connected to the first initialization unit and is capable of selectively supplying a first voltage and a second voltage different from the first voltage to the first initialization unit.

In a solid-state imaging element equipped with per-column ADCs, noise is reduced. A test signal source generates a test signal of a predetermined level. An analog-to-digital converter increases/decreases an analog signal according to an analog gain selected from among a plurality of analog gains, and converts the increased/decreased analog signal to a digital signal. An input switching section inputs, as the analog signal, either a test signal or a pixel signal to the analog-to-digital converter. A correction value calculation section obtains, on the basis of the test signal and the digital signal, a correction value for correcting an error in the selected analog gain, and outputs the correction value. A correction section corrects the digital signal according to the outputted correction value.

Provided is a semiconductor element capable of inspecting a plurality of wires formed in parallel. A semiconductor element according to an embodiment includes: a first circuit (45B) connected to a first position of each of a plurality of wires of a first wire group (31) including the plurality of wires; a second circuit (45A) connected to a second position corresponding to an end of each of the plurality of wires; and a plurality of connection units (43) that connects a third circuit (14) with each of the plurality of wires, the plurality of connection units (43) being provided on a one-to-one basis to the plurality of wires between the first position and the second position of each of the plurality of wires.

An imaging element includes: a pixel board including a light receiver including plural pixels, each pixel being configured to generate an imaging signal; a circuit board including a functional circuit, the pixel board being layered on the circuit board; plural wiring portions configured to electrically connect the pixel board and the circuit board to each other and electrically transmit signals between respective layers; a terminal provided on the circuit board, the terminal being electrically connected to each of the plural wiring portions, the terminal being configured to output the imaging signal to an outside of the terminal or receive an external signal from the outside of the terminal; and a switch configured to output, by selective switching, at least one of the imaging signal and an internal signal generated at the circuit board, to the terminal.

In a solid-state imaging element equipped with per-column ADCs, noise is reduced. A test signal source generates a test signal of a predetermined level. An analog-to-digital converter increases/decreases an analog signal according to an analog gain selected from among a plurality of analog gains, and converts the increased/decreased analog signal to a digital signal. An input switching section inputs, as the analog signal, either a test signal or a pixel signal to the analog-to-digital converter. A correction value calculation section obtains, on the basis of the test signal and the digital signal, a correction value for correcting an error in the selected analog gain, and outputs the correction value. A correction section corrects the digital signal according to the outputted correction value.

Noise is reduced in a solid-state image capturing element provided with an ADC for each column. An analog-to-digital converter increases or decreases an analog signal using an analog gain selected from among a plurality of analog gains, and converts the increased or decreased analog signal to a digital signal. An input switching section inputs, as the analog signal, one of a test signal having a predetermined level and a pixel signal to the analog-to-digital converter. In a case where a test signal is inputted, a correction value calculation section obtains, from the analog signal and the digital signal, a correction value for correcting an error in the selected analog gain, and outputs the correction value. A correction section, when inputted with the pixel signal after the correction value is outputted, corrects the digital signal using the correction value.

An image sensing device includes a first test block, a second test block, and a readout block. The first test block includes a plurality of first image sensing pixels structured to convert incident light carrying an image into a first pixel signal indicative of the image, and a first heating element structured to transmit heat to the first image sensing pixels. The second test block includes a plurality of second image sensing pixels that each include a light blocking structure to be shielded from receiving incident light to generate a second pixel signal without being directly exposed to the incident light, and a second heating element structured to transmit heat to the second image sensing pixels. The readout block processes the first pixel signal output from the first test block and the second pixel signal output from the second test block.

Provided is a photoelectric conversion device including a pixel array that includes pixels forming columns and is arranged in a substrate, first signal lines each transmitting a signal output from a pixel of a corresponding column, an analog circuit arranged in the substrate and configured to process signals from the pixels, second signal lines transmitting signals from the pixels to the analog circuit on a column basis, a switch configured to change a combination of connections between the first signal lines and the second signal lines, and a shift register arranged in the substrate, including a flip-flop, and configured to control the switch. In a plan view with respect to the substrate, the shift register is arranged between the pixel array and the analog circuit. In the plan view, the switch and the flip-flop are arranged in a direction different from a direction in which the first signal lines extend.

The degree of freedom of an abnormality detection target location in a solid-state imaging device in which a plurality of substrates are joined is improved. A semiconductor device includes a connection line and a detection circuit. A plurality of semiconductor substrates are joined in the semiconductor device. Then, in the semiconductor device, the connection line is wired across the plurality of semiconductor substrates. The detection circuit detects the presence or absence of an abnormality in a joint surface of the plurality of semiconductor substrates based on an energization state of the connection line when enable has been set by a predetermined control signal.

A photoelectric conversion apparatus includes a pixel area including a plurality of pixels each including an avalanche photodiode including an anode and a cathode. The plurality of pixels includes effective pixels that output a photon detection signal responsive to photo detection, dummy pixels that do not output the photon detection signal, and optical black pixels including a light shielding portion. The pixel area includes a first area including the effective pixels, a second area including the dummy pixels, and a third area including the optical black pixels. The second area includes a first portion in contact with an end of the pixel area and a second portion. The first portion, the first area, the second portion, and the third area are disposed in this order in a first direction. A width of the second portion is larger than a width of the first portion in the first direction.