According to certain embodiments, an image sensor including a pixel, the pixel including a micro lens, a plurality of photodiodes, and a color filter disposed between the plurality of photodiodes and the micro lens; a processor operatively connected to the image sensor; and a memory operatively connected to the processor, wherein the memory stores one or more instructions that, when executed by the image sensor, cause the image sensor to perform a plurality of operations, the plurality of operations comprising: determining whether the image sensor is in a high-resolution mode; when the image sensor is in the high-resolution mode, calculating a disparity based on signals detected from the plurality of photodiodes; when the disparity is not greater than a threshold value, applying a first remosaic algorithm to the signals; and when the disparity is greater than the threshold value, applying a second remosaic algorithm to the signals.

The present technique relates to an imaging element and a distance measurement module capable of reducing parasitic capacity._A distance measurement module includes: a first wiring that connects predetermined transistors in first adjacent pixels to a via formed in one of first adjacent pixels and connected to a wiring formed in another layer; and a second wiring that connects predetermined transistors in second adjacent pixels to a via formed in a pixel that is adjacent to one of second adjacent pixels and connected to a wiring formed in another layer, in which the first wiring is connected to a redundant wiring. The present technique can be applied to a distance measurement sensor that performs distance measurement, for example.

An electronic device is provided. The electronic device includes a memory, an image sensor including light receiving elements each including at least two sub light receiving elements, and an image signal processor. The image signal processor is configured to obtain images corresponding to light from outside by using the image sensor, the images including at least a raw image, a first sub image, and a second sub image, the first sub image being an image corresponding to light detected by at least one first sub light, the second sub image being an image corresponding to light detected by at least one second sub light, identify a luminance ratio between the first sub image and the second sub image, identify a defect in the raw image, based on the luminance ratio, and perform a function corresponding to a type of the defect.

A photoelectric conversion apparatus includes a driving unit and a plurality of pixels. The pixel includes a first photoelectric conversion unit, a second photoelectric conversion unit, a charge-voltage conversion unit, a first transfer transistor, a second transfer transistor, a reset transistor, a microlens configured to condense incident light to the first photoelectric conversion unit and the second photoelectric conversion unit, and an output unit. The driving unit performs a first operation including a first reset operation and a first readout operation, and a second operation including a second reset operation and a second readout operation.

Methods, systems, and devices for techniques for phase detection autofocus (PDAF) are described. A device may receive a set of PDAF pixels and may rearrange the set of PDAF pixels into a first subset of pixels in a first line buffer and a second subset of pixels in a second line buffer. As part of a first output operation, the device may perform a uniformity correction on the first subset of pixels, output the first subset of pixels to a left, center, right (LCR) processing path, and write-back the corrected first subset of pixels to the first line buffer. As part of a second output operation, the device may perform a uniformity correction on the second subset of pixels, output the second subset of pixels to an LCR processing path and an interleaver, and pull the corrected first subset of pixels from the first line buffer to the interleaver.

An image sensor includes: a first imaging region that captures an image of light entering through an optical system under a first imaging condition and generates a detection signal to perform focus detection of the optical system; and a second imaging region that captures an image of the light entering through the optical system under a second imaging condition other than the first imaging condition and generates an image signal.

A camera module includes a transparent plate, a top sensing layer, and a light-cutting layer. The transparent plate includes a bottom surface and a top surface opposite to the bottom surface. The top sensing layer is formed on the bottom surface. The light-cutting layer is formed on the top surface, and includes a blocking material and transparent apertures penetrating through the blocking material.

The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels. The present disclosure is applicable to a backside illumination CMOS image sensor and an electronic apparatus equipped with the same.

The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels. The present disclosure is applicable to a backside illumination CMOS image sensor and an electronic apparatus equipped with the same.

The present disclosure relates to a solid state image sensor and electronic equipment that enable degradation in image quality of a captured image to be suppressed even if any pixel in a pixel array is configured as a functional pixel for obtaining desired information in order to obtain information different from a normal image. In a plurality of pixels constituting subblocks provided in an RGB Bayer array constituting a block which is a set of color units, normal pixels that capture a normal image are arranged longitudinally and laterally symmetrically within the subblock, and functional pixels for obtaining desired information other than capturing an image are arranged at the remaining positions. The present disclosure can be applied to a solid state image sensor.