The present invention discloses an image sensor, an image readout method, and an electronic device. The image sensor comprises: a pixel array and a plurality of readout conversion circuits, the readout conversion circuit comprises: a comparison circuit for comparing an output signal of the column pixel with a ramp signal to obtain a first output signal and a second output signal; a selection module for selecting the first output signal during a first sampling count, and selecting the second output signal during a second sampling count; a counter for counting according to the first output signal and the second output signal to obtain total quantization value of the first sampling count and the second sampling count, so as to obtain actual signal quantization result according to the total quantization value. The image readout speed of the image sensor is improved.

To improve the accuracy of the recognition processing used in an image sensor. A solid-state imaging device includes a pixel array, a converter, an image processing unit, a digital signal processing unit, and a control unit. The pixel array has a plurality of pixels that perform photoelectric conversion. The converter converts an analog pixel signal output from the pixel array into digital image data. The image processing unit performs image processing on the digital image data. The digital signal processing unit performs recognition processing on the digital image data output by the image processing unit. The control unit performs optimization regarding at least one acquisition processing operation among acquisition of the analog pixel signal, acquisition of the digital image data, and acquisition of a result of the recognition processing based on the result of the recognition processing.

A photosensitive sensor is capable of operating in a global shutter mode and in a rolling shutter mode. The sensor includes at least one pixel with a photosensitive region configured to photogenerate charges. A first transfer gate is configured to transfer photogenerated charges from the photosensitive region to a transfer node. A source-follower transistor is configured to transmit a reading signal to a read node, in the global shutter mode, in a manner controlled by a potential of the photogenerated charges on the transfer node. A second transfer gate is configured to transfer the photogenerated charges from the photosensitive region to the read node in the rolling shutter mode.

In an embodiment a pixel arrangement includes a photodetector configured to accumulate charge carriers by converting electromagnetic radiation, a transfer transistor electrically coupled to the photodetector, a diffusion node electrically coupled to the transfer transistor, a reset transistor electrically coupled to the diffusion node and to a pixel supply voltage and a sample-and-hold stage including at least a first capacitor and a second capacitor, an input of the sample-and-hold stage being electrically coupled to the diffusion node via an amplifier, wherein the transfer transistor is configured to be pulsed to different voltage levels for transferring parts of the accumulated charge carriers to the diffusion node, wherein at least the second capacitor is configured to store a low conversion gain signal representing a first part of the accumulated charge carriers, and wherein the first capacitor is configured to store a high conversion gain signal representing a remaining part of the accumulated charge carriers.

An image sensor includes a pixel with a photosensitive region accommodated within a semiconductor substrate and a MOS capacitive element with a conducting electrode electrically isolated by a dielectric layer. The dielectric layer forms an interface with both the photosensitive region and the semiconductor substrate, the interface of the dielectric layer including charge traps. A control circuit biases the electrode of the MOS capacitive element with a charge pumping signal designed to generate an alternation of successive inversion regimes and accumulation regimes in the photosensitive region. The charge pumping signal produces recombinations of photogenerated charges in the charge traps of the interface of the dielectric layer and the generation of a substrate current to empty recombined photogenerated charges.

A method, apparatus and system are described providing a high dynamic range pixel. An integration period has multiple sub-integration periods during which charges are accumulated in a photosensor and repeatedly transferred to a storage node, where the charges are accumulated for later transfer to another storage node for output.

The present technology relates to an image sensor, an imaging device, and a ranging device capable of performing imaging so that noise is reduced. A photoelectric conversion unit configured to perform photoelectric conversion; a charge accumulation unit configured to accumulate charges obtained by the photoelectric conversion unit; a transfer unit configured to transfer the charges from the photoelectric conversion unit to the charge accumulation unit; a reset unit configured to reset the charge accumulation unit; a reset voltage control unit configured to control a voltage to be applied to the reset unit; and an additional control unit configured to control addition of capacitance to the charge accumulation unit are included. The charge accumulation unit includes a plurality of regions. The present technology can be applied to, for example, an imaging device that captures an image and a ranging device that performs ranging.

Provided is a pixel array including a plurality of pixels, each of which includes a photodiode configured to generate a photocharge in a frame including a plurality of unit frames, a floating diffusion node configured to receive the photocharge, a first storage capacitor configured to receive and store a first photocharge generated by the photodiode through the floating diffusion node during a first unit accumulation time period in each of the plurality of unit frames, and a second storage capacitor configured to receive and store a second photocharge generated by the photodiode through the floating diffusion node during a second unit accumulation time period in each of the plurality of unit frames.

Provided is a pixel array including a plurality of pixels, each of which includes a photodiode configured to generate a photocharge in a frame including a plurality of unit frames, a floating diffusion node configured to receive the photocharge, a first storage capacitor configured to receive and store a first photocharge generated by the photodiode through the floating diffusion node during a first unit accumulation time period in each of the plurality of unit frames, and a second storage capacitor configured to receive and store a second photocharge generated by the photodiode through the floating diffusion node during a second unit accumulation time period in each of the plurality of unit frames.

An image sensor includes: a pixel substrate that includes a plurality of pixels each having a photoelectric conversion unit that generates an electric charge through photoelectric conversion executed on light having entered therein and an output unit that generates a signal based upon the electric charge and outputs the signal; and an arithmetic operation substrate that is laminated on the pixel substrate and includes an operation unit that generates a corrected signal by using a reset signal generated after the electric charge in the output unit is reset and a photoelectric conversion signal generated based upon an electric charge generated in the photoelectric conversion unit and executes an arithmetic operation by using corrected signals each generated in correspondence to one of the pixels.