An apparatus includes a sensor having an array of detectors. The sensor is configured to assign multiple detectors to a detector group corresponding to a block pixel. The sensor is also configured, for each frame of a set of frames, to apply a specified one of a set of mask patterns in order to select outputs of the detectors in the detector group and aggregate the selected outputs of the detectors in the detector group to determine pixel information for the block pixel. The apparatus also includes at least one processor configured to generate the frames using the pixel information for the block pixel, and upscale the portion of the at least one of the frames using the set of mask patterns to identify native pixels within the block pixel.

A solid-state imaging element including a well improves area efficiency while reducing malfunction of a circuit on the well. The solid-state imaging element includes a first well, a second well, a first circuit, and a second circuit. The first well contains an impurity having a polarity identical to a polarity of an impurity in a substrate. The second well contains an impurity having a polarity identical to the polarity of the impurity in the substrate and is disposed adjacent to the first well. The first circuit is disposed on the first well and generates noise in a predetermined period. The second circuit is disposed on the second well and generates noise in a period different from the predetermined period.

An image sensor includes: a pixel substrate that includes a plurality of pixels each having a photoelectric conversion unit that generates an electric charge through photoelectric conversion executed on light having entered therein and an output unit that generates a signal based upon the electric charge and outputs the signal; and an arithmetic operation substrate that is laminated on the pixel substrate and includes an operation unit that generates a corrected signal by using a reset signal generated after the electric charge in the output unit is reset and a photoelectric conversion signal generated based upon an electric charge generated in the photoelectric conversion unit and executes an arithmetic operation by using corrected signals each generated in correspondence to one of the pixels.

Imaging devices are disclosed. In one example, an imaging device includes a photoelectric conversion unit with plural photoelectric conversion elements, a detector that outputs a detection signal indicating whether or not an amount of change in the electric signal of each of the photoelectric conversion elements exceeds a predetermined threshold value, a pixel signal generation unit that generates a pixel signal on the basis of the electric signal, a transfer controller that controls transfer of the electric signal to the pixel signal generation unit, and an analog-to-digital converter that converts the pixel signal into a digital signal. The low-potential-side reference potentials of the photoelectric conversion unit, the detector, the pixel signal generation unit, and the analog-to-digital converter, and the off-potential of the transfer controller include three or more potentials having different potential levels.

A semiconductor device according to an embodiment includes a plurality of element arrays, a signal-processing circuit, and a comparison-voltage generation circuit. Each element array is selectively connected to a vertical signal line and includes an amplification transistor configured to output a first analog signal on the basis of an input analog voltage and an actual value of variation of a characteristic value of each element array included in the plurality of element arrays. The comparison-voltage generation circuit is configured to output a gradually increasing or gradually decreasing comparison voltage. The signal-processing circuit includes a storage circuit and is configured to compare the first analog signal with the comparison voltage and store a timing at which the comparison voltage and a value of a second analog signal generated by adding a predetermined absolute value to the first analog signal match each other onto the storage circuit.

A polarization imager is provided that includes a plurality of CMOS photodetectors and a plurality of polarization filters. Each of the plurality of CMOS photodetectors has a photodiode that is configured to operate in forward bias mode. Further, each of the plurality of polarization filters is monolithically integrated with a corresponding one of the plurality of CMOS photodetectors. Each of the plurality of photodiodes exhibits a logarithmic response to a flux of incident photons. The polarization imager achieves a dynamic range of at least 100 decibels with a signal-to-noise ratio of at least 60 decibels.

An abnormal-pixel detecting device includes an image sensor and an image processor. The image sensor is configured to capture an image of a subject. The image processor is configured to calculate: a ratio between a first plurality of pixel values captured by the image sensor and a second plurality of pixel values whose reference position is shifted relative to the first plurality of pixel values in a main scanning direction to obtain a third plurality of pixel values; and detect an abnormal pixel in the third plurality of pixel values.

A photoelectric conversion device may operate in a first to third driving modes. In the first driving mode in which a correction value is acquired, an analog-to-digital conversion unit compares a first analog signal with a reference signal to acquire the correction value. In the second driving mode in which a pixel signal is read, a reading condition is set based on a result of comparing the pixel signal with a threshold signal. In the third driving mode, at least one of the first analog signal and the threshold signal is controlled to reduce a difference between a potential of the first analog signal and a potential of the threshold signal.

A photoelectric conversion device may operate in a first to third driving modes. In the first driving mode in which a correction value is acquired, an analog-to-digital conversion unit compares a first analog signal with a reference signal to acquire the correction value. In the second driving mode in which a pixel signal is read, a reading condition is set based on a result of comparing the pixel signal with a threshold signal. In the third driving mode, at least one of the first analog signal and the threshold signal is controlled to reduce a difference between a potential of the first analog signal and a potential of the threshold signal.

This disclosure presents a novel smart CMOS imaging sensor and the methods and system for imaging of an object using the smart CMOS imaging sensor. A CMOS-implemented 3D imaging system compromises a wise-pixels-containing imaging sensor and a scanning light point or beam to achieve 3D shape reconstruction, by recording performance of each wise-pixel to the incident light over the period of “valve modulation”. The “valve modulation” is a one-time process of accumulation and release of charges. A frame period comprises multiple valve modulations. In the “frame period”, each wise-pixel will repeat the process that temporarily stores the light intensity, and then release, along with a selection of preferred intensity (e.g. the globally maximum intensity, or the locally maximum intensities, and or the intensities above a certain threshold) during the whole frame period, and the selected intensity and the corresponding time will be exported to the computing units. The selection of the different preferred light intensities is implemented by memory-based, threshold-based, and difference-based approaches, respectively. The obtained maximum intensity and time information can be used to reconstruct 3D geometric information of the surface of the object scanned by moving light source.