A system counts photon interactions in an array of photosensitive diodes and addresses the issue of improving position resolution. Every photo-detector diode of the array is connected to a readout unit cell containing a high-gain charge-to-voltage amplifier, a shaper, at least two comparators with independent thresholds and at least one interpixel communication logic, receiving as input signals from comparator outputs of the same readout unit cell and of the neighboring readout unit cells. This logic is then connected to at least one counter, each counter followed by a counter readout. By means of the digital interpixel communication logic and the set of comparators with different thresholds in every readout unit cell, it is possible to determine the photon hit position in the detector with a higher position resolution than the physical photo-detector size including the removal of the corner effect in pixel detectors.

To improve a frame rate in a solid-state imaging element that compares a reference signal and a pixel signal.

The solid-state imaging element includes a differential amplifier circuit, a transfer transistor, and a source follower circuit. The differential amplifier circuit amplifies a difference between the potentials of a pair of input nodes and outputs the difference from an output node. The transfer transistor transfers charge from a photoelectric conversion element to a floating diffusion layer. The auto-zero transistor short-circuits the floating diffusion layer and the output node in a predetermined period. The source follower circuit supplies a potential to one of the pair of input nodes according to a potential of the floating diffusion layer.

To improve the accuracy of the recognition processing used in an image sensor. A solid-state imaging device includes a pixel array, a converter, an image processing unit, a digital signal processing unit, and a control unit. The pixel array has a plurality of pixels that perform photoelectric conversion. The converter converts an analog pixel signal output from the pixel array into digital image data. The image processing unit performs image processing on the digital image data. The digital signal processing unit performs recognition processing on the digital image data output by the image processing unit. The control unit performs optimization regarding at least one acquisition processing operation among acquisition of the analog pixel signal, acquisition of the digital image data, and acquisition of a result of the recognition processing based on the result of the recognition processing.

An imaging device capable of reducing a useless region on a substrate is provided. An imaging device including a plurality of substrates to be stacked includes a readout-only circuit disposed on a substrate different from a substrate having a pixel array unit including a plurality of photoelectric conversion elements disposed thereon, and performing an operation of reading out electrical signals obtained through photoelectric conversion in the plurality of photoelectric conversion elements, and a circuit disposed on a substrate different from the substrate having the readout-only circuit disposed thereon and performing an operation other than an operation of the readout-only circuit on the basis of the electrical signals.

A distributed, parallel, image capture and processing architecture provides significant advantages over prior art systems. A very large array of computational circuits—in some embodiments, matching the size of the pixel array—is distributed around, within, or beneath the pixel array of an image sensor. Each computational circuit is dedicated to, and in some embodiments is physically proximal to, one, two, or more associated pixels. Each computational circuit is operative to perform computations on one, two, or more pixel values generated by its associated pixels. The computational circuits all perform the same operation(s), in parallel. In this manner, a very large number of pixel-level operations are performed in parallel, physically and electrically near the pixels. This obviates the need to transfer very large amounts of pixel data from a pixel array to a CPU/memory, for at least many pixel-level image processing operations, thus alleviating the significant high-speed performance constraints placed on modern image sensors.

To improve image quality of image data in a solid-state image sensor that detects an address event. The solid-state image sensor includes a photodiode, a pixel signal generation unit, and a detection unit. In the solid-state image sensor, the photodiode generates electrons and holes by photoelectric conversion. The pixel signal generation unit generates a pixel signal having a voltage according to an amount of one of the electrons and the holes. The detection unit detects whether or not a change amount in the other of the electrons and the holes has exceeded a predetermined threshold and outputs a detection signal.

The present technology relates to an imaging apparatus and electronic equipment that can reduce noise. A photoelectric conversion element, a conversion unit that converts a signal from the photoelectric conversion element into a digital signal, a bias circuit that supplies a bias current for controlling a current flowing through an analog circuit in the conversion unit, and a control unit that controls the bias circuit on the basis of an output signal from the conversion unit are provided, and at the start of transfer of a charge from the photoelectric conversion element, the control unit boosts a voltage at a predetermined position of the analog circuit. The conversion unit converts the signal from the photoelectric conversion element into a digital signal using a slope signal whose level monotonously decreases with time. The present technology is applicable to, for example, an imaging apparatus.

The present technology relates to an image sensor, an imaging device, and a ranging device capable of performing imaging so that noise is reduced. A photoelectric conversion unit configured to perform photoelectric conversion; a charge accumulation unit configured to accumulate charges obtained by the photoelectric conversion unit; a transfer unit configured to transfer the charges from the photoelectric conversion unit to the charge accumulation unit; a reset unit configured to reset the charge accumulation unit; a reset voltage control unit configured to control a voltage to be applied to the reset unit; and an additional control unit configured to control addition of capacitance to the charge accumulation unit are included. The charge accumulation unit includes a plurality of regions. The present technology can be applied to, for example, an imaging device that captures an image and a ranging device that performs ranging.

Provided is a pixel array including a plurality of pixels, each of which includes a photodiode configured to generate a photocharge in a frame including a plurality of unit frames, a floating diffusion node configured to receive the photocharge, a first storage capacitor configured to receive and store a first photocharge generated by the photodiode through the floating diffusion node during a first unit accumulation time period in each of the plurality of unit frames, and a second storage capacitor configured to receive and store a second photocharge generated by the photodiode through the floating diffusion node during a second unit accumulation time period in each of the plurality of unit frames.

A pulse-width modulation (PWM) image sensor is described herein. The PWM image sensor may have a stacked configuration. A top wafer of the PWM image sensor may have a charge-to-time converter and a logic wafer, stacked with the top wafer, may include a time-to-digital converter. The PWM image sensor may utilize variable transfer functions to avoid highlight compression and may utilize non-linear time quantization. A threshold voltage, as input to a charge-to-time converter, may additionally be controlled to affect light detection, dynamic range, and other features associated with the PWM image sensor.