Patent classifications
H04R19/005
VIBRATION SENSORS
The embodiments of the present disclosure may disclose a vibration sensor, including: an acoustic transducer and a vibration assembly connected with the acoustic transducer. The vibration assembly may be configured to transmit an external vibration signal to the acoustic transducer to generate an electric signal, the vibration assembly includes one or more groups of vibration diaphragms and mass blocks, and the mass blocks may be physically connected with the vibration diaphragms. The vibration assembly may be configured to make a sensitivity degree of the vibration sensor greater than a sensitivity degree of the acoustic transducer in one or more target frequency bands.
Digital microphone with low data rate interface
A MicroElectroMechanical System (MEMS) includes a MEMS device; a feature extraction component coupled to an output of the MEMS device, wherein the feature extraction component is configured to provide a plurality of features of an output signal of the MEMS device; and a low data rate interface coupled to the feature extraction components, wherein the low data rate interface is configured to transmit the plurality of features of the output signal of the MEMS device, and wherein a low data rate of the low data rate interface is determined by a number of the plurality of features transmitted, wherein the MEMS device, the feature extraction component, and the low data rate interface are packaged together in a semiconductor package.
Method for forming semiconductor device
A method for forming a MEMS device includes following operations. A first semiconductor layer is formed over a substrate. A plurality of first pillars are formed over the first layer. A second layer is formed over the first pillars and the first layer. A plurality of second pillars are formed over the second layer. A third layer is formed over the second pillars and the second layer.
MEMS CHIP
Disclosed is a MEMS chip that in certain embodiments includes a substrate with a back cavity, and a plate capacitor bank provided on the substrate; the plate capacitor bank at least includes a first plate capacitor structure and a second plate capacitor structure located below the first plate capacitor structure and arranged in parallel with the first plate capacitor structure; the first plate capacitor structure includes a first diaphragm and a first hack electrode; and the second plate capacitor structure includes a second. diaphragm and a second back electrode.
EFFICIENT SEAMLESS SWITCHING OF SIGMA-DELTA MODULATORS
A digital microphone includes at least one integrator; a state detection and parameter control component directly coupled to an output of the integrator; and a signal processing component coupled to an output of the state detection and parameter control component, wherein a parameter of the signal processing component includes a first value in a first operational mode and a second value in a second operational mode different from the first operational mode.
MEMS transducer for interacting with a volume flow of a fluid, and method of producing same
A MEMS transducer for interacting with a volume flow of a fluid includes a substrate which includes a layer stack having a plurality of layers which form a plurality of substrate planes, and which includes a cavity within the layer stack. The MEMS transducer includes an electromechanical transducer connected to the substrate within the cavity and including an element which is deformable within at least one plane of movement of the plurality of substrate planes, deformation of the deformable element within the plane of movement and the volume flow of the fluid being causally correlated. The MEMS transducer includes an electronic circuit arranged within a layer of the layer stack, the electronic circuit being connected to the electromechanical transducer and being configured to provide a conversion between a deformation of the deformable element and an electric signal.
Electret
An electret includes a composite oxide having an ABO.sub.3 type perovskite structure containing two different metal elements A and B. The composite oxide is in a polarized state, at least a part of one of the metal elements A and B is substituted with a dopant element having a lower valence than the one of the metal elements A and B, and the composite oxide has a bandgap energy of 4 eV or more.
PIEZOELECTRIC MICROELECTROMECHANICAL SYSTEM CORRUGATED MICROPHONE
A piezoelectric microelectromechanical system microphone comprises a support substrate, a piezoelectric element configured to deform and generate an electrical potential responsive to impingement of sound waves on the piezoelectric element, the piezoelectric element attached to the support substrate about a perimeter of the piezoelectric element, a sensing electrode disposed on the piezoelectric element and configured to sense the electrical potential, and corrugations defined in the piezoelectric element about the perimeter of the piezoelectric element to release residual stress and improve sensitivity of the piezoelectric microelectromechanical system microphone.
MEMS DEVICES AND PROCESSES
The application describes MEMS transducer having a flexible membrane and which seeks to alleviate and/or redistribute stresses within the membrane layer. A membrane having a first/active region and a second/inactive region is described.
MEMS DEVICE AND PROCESS
The application describes MEMS transducer structures comprising a membrane structure having a flexible membrane layer and at least one electrode layer. The electrode layer is spaced from the flexible membrane layer such that at least one air volume extends between the material of the electrode layer and the membrane layer. The electrode layer is supported relative to the flexible membrane by means of a support structure which extends between the first electrode layer and the flexible membrane layer.