An atomization component includes: a matrix; and a heating film. The matrix includes an atomization surface. The heating film is arranged on the atomization surface, and when energized, heats and atomizes an aerosol-generating substrate on the atomization surface. The heating film includes a metal heating layer and an inorganic protection layer that are stacked, the inorganic protection layer being arranged on a surface of the metal heating layer that is away from the matrix. The metal heating layer includes at least two sub-metal layers that are sequentially stacked. Any two adjacent sub-metal layers have different components.

The present specification relates to heater element, device provided therewith and method for manufacturing such heater element. The heater element comprises a heater of a resistance heating metal that is provided in, at or close to a fluid path configured for heating fluid, wherein the heater comprises a conductor that is provided with a porous ceramic layer. In embodiments, the ceramic layer is provided on or at the conductor with plasma electrolytic oxidation. The ceramic layer has a thickness in the range of 5-300 μm.

A heater assembly for an aerosol-generating system includes a perforated glass substrate and a heater element. The heater element is provided in the glass substrate, on the glass substrate, or both in and on the glass substrate. The heater element includes a plurality of parallel strips between alternating rows of the perforations.

An apparatus may provide a component, such as a showerhead, a pipe, a valve manifold, or a vessel, having a printed heater affixed to an outer surface of the component. In addition, a printed temperature sensor may be affixed to the outer surface of the component. The apparatus may further provide a controller to control the power to the printed heater according to data output from the printed temperature sensor.

A substrate support includes a heater body, a heater element, and a heater terminal. The heater body is formed from a ceramic material and has upper and lower surfaces separated by a thickness. The heater element is arranged between the upper and lower surfaces and is embedded within the ceramic material forming the heater body. The heater terminal is arranged between the upper and lower surfaces, is electrically connected to the heater element, and has an electrode surface and a rounded surface. The electrode surface opposes the lower surface to flow an electric current to the heater element. The rounded surface opposes the upper surface and is embedded within the ceramic material to limit stress within the ceramic material during heating of a substrate seated on the upper surface of the heater body. Semiconductor processing systems and methods of making substrate supports for semiconductor processing systems are also described.

A plasma processing apparatus includes a stage having a placing surface on which a workpiece is accommodated; a heater provided in the stage and configured to adjust a temperature of the placing surface of the stage; and a controller. The controller is configured to control a supply power to the heater; measure the supply power in a transient state where the supply power to the heater increases and in a second steady state where the supply power to the heater is stable in an extinguished state of plasma; calculate a heat input amount and a heat resistance by performing a fitting on a calculation model that calculates the supply power in the transient state using the heat input amount from the plasma and the heat resistance between the workpiece and the heater as parameters; and calculate a temperature of the workpiece in the first steady state.

A focus ring placement table includes an annular ceramic heater on which a focus ring is placed, a metal base, an adhesive element bonding the metal base and the ceramic heater, an inner-peripheral-side protective element disposed between the metal base and the ceramic heater and bonded to an inner peripheral portion of the adhesive element, and an outer-peripheral-side protective element disposed between the metal base and the ceramic heater and bonded to an outer peripheral portion of the adhesive element. A coefficient of thermal expansion of the adhesive element is equal to or smaller than a coefficient of thermal expansion of the inner-peripheral-side protective element and is equal to or greater than a coefficient of thermal expansion of the outer-peripheral-side protective element.

A member for a semiconductor manufacturing apparatus includes a disk-shaped or annular ceramic heater, a metal base, an adhesive element bonding the metal base and the ceramic heater, an adhesive protective element disposed between the ceramic heater and the metal base to extend along a periphery of the adhesive element, and an anti-adhesion layer disposed between the adhesive element and the protective element, the anti-adhesion layer preventing adhesion between the adhesive element and the protective element.

A heater includes a base, a resistive heating body, and a terminal portion. The base is formed of ceramic and has a plate shape. The resistive heating body is located in the base. The terminal portion is electrically connected to the resistive heating body. The base includes a protruding portion surrounding the terminal portion, on a lower surface side. The protruding portion is formed of a ceramic member, and the terminal portion passes through a through hole formed in the ceramic member. The ceramic member is bonded to at least one of the lower surface of the base or the terminal portion.

In a ceramic heater, a central-zone heating resistor and an outer-peripheral-zone heating resistor are embedded in a disc-like ceramic base having a wafer-mounting surface on one side. The central-zone heating resistor is a wire extending in a single continuous line from one of a pair of terminals to the other. The pair of terminals as a whole form a circular shape in plan view.