H05B33/145

OPTICAL FILTER AND MANUFACTURING METHOD THEREFOR, DISPLAY SUBSTRATE, AND DISPLAY APPARATUS
20180011231 · 2018-01-11 ·

An optical filter and manufacturing method therefor, a display substrate, and a display apparatus. The optical filter includes: a base substrate; an ordered porous film disposed on the base substrate, wherein the ordered porous film is formed with channels each of which having an extension direction at least at an angle to the base substrate and having an opening at a surface of the ordered porous film; and a plurality of quantum dots respectively disposed in at least part of the channels. The optical filter, the display substrate having the optical filter and the display apparatus can significantly improve the display colour gamut of the display apparatus.

LED with structured layers and nanophosphors
11600752 · 2023-03-07 · ·

A device comprising a light emitting diode (LED) substrate, and a meta-molecule wavelength converting layer positioned within an emitted light path from the LED substrate, the a meta-molecule wavelength converting layer including a plurality of nanoparticles, the plurality of nanoparticles configured to increase a light path length in the wavelength converting layer.

Optical filter and manufacturing method therefor, display substrate, and display apparatus

An optical filter and manufacturing method therefor, a display substrate, and a display apparatus. The optical filter includes: a base substrate; an ordered porous film disposed on the base substrate, wherein the ordered porous film is formed with channels each of which having an extension direction at least at an angle to the base substrate and having an opening at a surface of the ordered porous film; and a plurality of quantum dots respectively disposed in at least part of the channels. The optical filter, the display substrate having the optical filter and the display apparatus can significantly improve the display colour gamut of the display apparatus.

Organic-inorganic hybrid bulk assemblies and methods

Bulk assemblies are provided, which may have desirable photoluminescence quantum efficiencies. The bulk assemblies may include two or more metal halides, and a wide band gap organic network. The wide band gap organic network may include organic cations. The metal halides may be disposed in the wide band gap organic network. Light emitting composite materials also are provided.

DISPLAY ELEMENT AND METHOD FOR MANUFACTURING A DISPLAY ELEMENT
20230156879 · 2023-05-18 ·

This disclosure relates to use of group 4 element codoping in a phosphor layer of activator-doped zinc sulfide of a display element, a display element, and a method for manufacturing a display element. The display element (100) comprises a first insulator layer (111), a second insulator layer (112), and a first phosphor layer (121) of activator-group 4 element codoped zinc sulfide between the first insulator layer (111) and the second insulator layer (112). The first phosphor layer (121) has an average atomic percentage of group 4 elements of at least 0.01 atomic percent.

Light-emitting devices and displays with improved performance

Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes an emissive material disposed between a first electrode, and a second electrode. Various embodiments include a device having a peak external quantum efficiency of at least about 2.2%; a device that emits light having a CIE color coordinate of x greater than 0.63; a device having an external quantum efficiency of at least about 2.2 percent when measured at a current density of 5 mA/cm.sup.2. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a peak luminescent efficiency of at least about 1.5 lumens per watt. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a luminescent efficiency of at least about 1.5 lumens per watt when measured at a current density of 5 milliamps/square centimeter. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has a peak external quantum efficiency of at least about 1.1 percent. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals, wherein the device has a luminescent efficiency of at least about 3 lumens per watt when measured at a current density of 5 mA/cm.sup.2. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has an external quantum efficiency of at least about 2% when measured at a current density of 5 mA/cm.sup.2. Other light-emitting devices and displays with improved performance are disclosed. Also disclosed are methods for preparing and for purifying semiconductor nanocrystals.

LIGHT EMITTING DEVICE AND WAVELENGTH CONVERSION MEMBER
20170363269 · 2017-12-21 ·

A light emitting device includes a laser light, a wavelength conversion member, a base member and a lid. The wavelength conversion member includes a plurality of projected portions each extending along a first direction on an upper surface side thereof and arranged side by side in a second direction. Each of the plurality of projected portions has a first surface extending along the first direction. The first surface is inclined with respect to a reference surface. The laser light source and the wavelength conversion member are arranged so that an optical axis of first light from the laser light source extends along the second direction when viewed from above and is inclined with respect to the reference surface, and light directly incident to the first surface along a direction parallel to the optical axis of the first light is regularly reflected toward an upward direction.

PHOSPHOR COMPOSITIONS WITH ORANGE AND AMBER LIGHT EMISSION
20230193128 · 2023-06-22 ·

A phosphor, wherein the phosphor has a formula:


.sup.VIII(Y.sub.1-x-z-w,Lu.sub.z,Gd.sub.w,Ce.sub.x).sub.3.sup.VI(Al.sub.1-yMn.sub.y).sub.2.sup.IV(Al.sub.1-2y/3,Si.sub.2y/3).sub.3O.sub.12,

wherein
0<x≤0.05,
0<y≤0.04,
0<x+z<1,
0≤w≤0.50 when z≠0,
0≤w≤0.35 when z=0, and
0<x+z+w≤1, is described. Furthermore, a light-emitting device and methods for preparing the phosphor and the light-emitting device are described.

Luminescent microspheres and preparation method thereof

Luminescent microspheres and a preparation method thereof are disclosed. The preparation method includes: 1) preparing cadmium oxide-doped silica microspheres; 2) adding the silica microspheres to a mixed solution of octadecene/oleic acid or trioctylamine (TOA)/oleic acid, and heating a resulting mixture to a boiling point so that the microspheres swell at high temperature and the oleic acid penetrates into the microspheres to react with CdO to obtain an organic cadmium-adsorbed silica suspension; and 3) adding a selenium precursor to the obtained organic cadmium-adsorbed silica suspension to obtain the luminescent microspheres, where, the selenium precursor reacts with the adsorbed organic cadmium to form CdSe. The luminescent microspheres provided in the present disclosure have high fluorescence efficiency and prominent stability, require no barrier materials such as barrier films for protection, and can be directly used for light conversion materials with high color gamut such as luminescent films, luminescent plates, Mini-LEDs, and Micro-LEDs.

Display device using semiconductor light emitting device
09837388 · 2017-12-05 · ·

A display device according to an embodiment of the present disclosure may include a lower substrate disposed with a line electrode at an upper portion thereof, a plurality of semiconductor light emitting devices electrically connected to the line electrode to generate light, a wavelength converter disposed on the semiconductor light emitting device to convert a wavelength of light generated from the semiconductor light emitting device, and a conductive adhesive layer comprising conductors configured to electrically connect the lower substrate to the semiconductor light emitting device and a body configured to surround the conductors, wherein the semiconductor light emitting device has a composition formula of In.sub.xAl.sub.yGa.sub.1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1).