A method for regulating a temperature of a magnetron includes: determining an anode current flowing through the magnetron and an output power of a variable-frequency power supply, the output power being configured to drive the magnetron to operate; calculating an anode voltage of the magnetron according to the anode current of the magnetron and the output power of the variable-frequency power supply; calculating an anode temperature of the magnetron according to the anode voltage of the magnetron; and regulating the output power of the variable-frequency power supply according to the anode temperature of the magnetron.

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding ribbon bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding ribbon may have a width of greater than about five times a thickness of the bonding ribbon.

An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. A top enclosure encloses the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the top enclosure engage reference ground metal traces on respective surface of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.

It is the object of the present invention to present a coffee roaster, comprising: a resonant cavity, a heating unit, comprising: (i) at least one microwave oscillator and (ii) at least one beam-steerer, a sensing unit; and a control unit configured to control the microwave oscillator and the bean-steerer and receive data from the sensing unit.

A dielectric constant estimation device which can estimate a dielectric constant of an object with high accuracy in a non-contact state even when a shape of the object is indefinite, and a microwave heating device equipped with the dielectric constant estimation device. The dielectric constant estimation device includes a transmitting antenna and a receiving antenna which can switch a polarized wave of an electromagnetic wave between a TE wave and a TM wave. Based on a reflected wave of the TE wave and a reflected wave of the TM wave from the object, the dielectric constant estimation device calculates a TM/TE reflection ratio, and compares the calculated TM/TE reflection ratio and dielectric constant data of theoretical values stored in a memory part in advance in the form of database with each other so that a dielectric constant of the object is estimated.

A substrate processing technology including: transferring a substrate to a process chamber and mounting the substrate on a substrate holder; heating the substrate with a heating device to perform predetermined substrate processing; determining the number of times of the predetermined substrate processing that has been performed that the predetermined substrate processing has been performed a preset number of times or more, determining whether it is necessary to adjust a mounting position at which the substrate is mounted on the substrate holder; and when it is determined that a mounting position adjustment is necessary, determining the mounting position by comparing the substrate temperature measured at the performing the predetermined substrate processing with a premeasured temperature of the substrate which corresponds to the mounting position and is stored in a memory.

A substrate processing technology including: transferring a substrate to a process chamber and mounting the substrate on a substrate holder; heating the substrate with a heating device to perform predetermined substrate processing; determining the number of times of the predetermined substrate processing that has been performed that the predetermined substrate processing has been performed a preset number of times or more, determining whether it is necessary to adjust a mounting position at which the substrate is mounted on the substrate holder; and when it is determined that a mounting position adjustment is necessary, determining the mounting position by comparing the substrate temperature measured at the performing the predetermined substrate processing with a premeasured temperature of the substrate which corresponds to the mounting position and is stored in a memory.

A fast annealing equipment is applicable to the annealing treatment of silicon carbide wafers. The fast annealing equipment comprises a variable frequency microwave power source system, a resonant chamber heating system and a measurement and control system. The variable frequency microwave power source system uses a solid state power amplifier and has the flexibility of fast frequency sweep during heat treatment to compensate for resonant frequency changes due to load effect caused by temperature changes in a material to be annealed. In order to improve an energy efficiency and provide a sufficient microwave energy uniform area, the TM.sub.010 resonant chamber structure can be used to anneal 4-inch to 8-inch silicon carbide wafers. The measurement and control system combines software and hardware to form an automatic system with instant feedback to provide further flexibility, stability and reliability for the entire equipment.

A method and device for regulating a temperature of a magnetron, a controller, a variable-frequency power supply, a system for regulating a temperature of a magnetron, and a microwave apparatus are provided. Wherein, the method for regulating the temperature of the magnetron includes: determining an anode current flowing through the magnetron or an input power of a variable-frequency power supply or an anode voltage applied to two ends of the magnetron, the input power or an output power of the variable-frequency power supply being configured to drive the magnetron to operate; regulating the output power of the variable-frequency power supply according to the anode current or the input power or the anode voltage.

An oven may include a cooking chamber configured to receive a food product, a radio frequency (RF) heating system configured to provide RF energy into the cooking chamber using solid state electronic components to heat the food product, and a context awareness engine. The context awareness engine may include processing circuitry configured to receive RF signature data (including measurements of at least forward power and reflected power) associated with provision of RF energy into the cooking chamber, and to correlate an RF signature with a phenomenon observed with respect to the food product to define a signature profile for the phenomenon observed.