A plasma-generating nozzle and a plasma device including the plasma-generating nozzle are provided. The plasma-generating nozzle includes a plasma-generating channel, a cooling channel at least partially surrounding the plasma-generating channel, and a pair of electrodes partially disposed in the plasma-generating channel for generating plasma. The plasma device includes a housing enclosing a plasma treatment space and a component space, and the plasma-generating nozzle removable disposed in the plasma treatment space.

Methods and apparatuses for emitting electrons from a hollow cathode are provided. The cathode includes a plasma holding region configured to hold a plasma, a gas supply source configured to supply gas to the plasma holding region, and an orifice plate disposed on a periphery of the plasma holding region. The orifice plate comprises a plurality of openings constructed to receive electrons from the plasma. The plurality of openings decouple gas conductance and electrical conductance across the orifice plate. The diameters of the plurality of openings are within a range of 20%-60%, inclusive, of a diameter of a circular opening with an area equal to a sum of the areas of the plurality of openings.

Methods and apparatuses for emitting electrons from a hollow cathode are provided. The cathode includes a plasma holding region configured to hold a plasma, a gas supply source configured to supply gas to the plasma holding region, and an orifice plate disposed on a periphery of the plasma holding region. The orifice plate comprises a plurality of openings constructed to receive electrons from the plasma. The plurality of openings decouple gas conductance and electrical conductance across the orifice plate. The diameters of the plurality of openings are within a range of 20%-60%, inclusive, of a diameter of a circular opening with an area equal to a sum of the areas of the plurality of openings.

A system using electrical discharge plasma (EDP) for treating a liquid, such as water or waste water to degrade or destroy polar contaminants such as per- and polyfluoroalkyl substances (PFAS) compounds, the system includes a sealed process tank and multiple submerged EDP channels stacked horizontally. Each EDP channel consists of a cathode and an anode, a gas hood, and a gas diffuser. The basic submerged EDP channel is bounded by a plate at the bottom and a submerged gas hood at the top which creates a gas headspace, and hence, a local water surface to provide a local gas/liquid interface in each channel. The cathode lies above the local water surface and anode lies below the local water surface. Each EDP channel may have a gas diffuser at the bottom of the EDP channel for introducing a process gas into the liquid creating bubbles that carry contaminants in the liquid to the local gas/liquid interface. An electrical discharge arcs between the cathode and the anode to generate a plasma used for destruction of contaminants in the water or wastewater at the local gas/liquid interface.

A system using electrical discharge plasma (EDP) for treating a liquid, such as water or waste water to degrade or destroy polar contaminants such as per- and polyfluoroalkyl substances (PFAS) compounds, the system includes a sealed process tank and multiple submerged EDP channels stacked horizontally. Each EDP channel consists of a cathode and an anode, a gas hood, and a gas diffuser. The basic submerged EDP channel is bounded by a plate at the bottom and a submerged gas hood at the top which creates a gas headspace, and hence, a local water surface to provide a local gas/liquid interface in each channel. The cathode lies above the local water surface and anode lies below the local water surface. Each EDP channel may have a gas diffuser at the bottom of the EDP channel for introducing a process gas into the liquid creating bubbles that carry contaminants in the liquid to the local gas/liquid interface. An electrical discharge arcs between the cathode and the anode to generate a plasma used for destruction of contaminants in the water or wastewater at the local gas/liquid interface.

Energy is generated from pulsed electric power sources applied to a gas medium that includes hydrogen. A sealed reactor chamber contains hydrogen. A plasma power supply, such as a DC, AC, or RF power supply, generates a plasma inside the chamber. The pulse energy generator systems use pulsed electric power for the conversion of molecular hydrogen into atomic hydrogen. An inner surface of the reactor chamber is coated with a catalyst to facilitate the reformation of molecular hydrogen from atomic hydrogen under conditions that release excess energy. The catalyst may include tungsten, nickel, titanium, platinum, palladium, and mixtures thereof. A plasma pulse controller connected to the plasma power supply turns the power supply on and off to generate plasma pulses inside the reactor chamber. A pulse time duration may range from 1 nanosecond to 1 millisecond and a dead time between pulses may range from 20 milliseconds to 0.3 seconds.

Energy is generated from pulsed electric power sources applied to a gas medium that includes hydrogen. A sealed reactor chamber contains hydrogen. A plasma power supply, such as a DC, AC, or RF power supply, generates a plasma inside the chamber. The pulse energy generator systems use pulsed electric power for the conversion of molecular hydrogen into atomic hydrogen. An inner surface of the reactor chamber is coated with a catalyst to facilitate the reformation of molecular hydrogen from atomic hydrogen under conditions that release excess energy. The catalyst may include tungsten, nickel, titanium, platinum, palladium, and mixtures thereof. A plasma pulse controller connected to the plasma power supply turns the power supply on and off to generate plasma pulses inside the reactor chamber. A pulse time duration may range from 1 nanosecond to 1 millisecond and a dead time between pulses may range from 20 milliseconds to 0.3 seconds.

An apparatus that forms liquid silicon includes a. a device by which a gas can be brought to a high-temperature state in which it is at least partially present as plasma, b. a reaction space and a feed conduit for the high-temperature gas opening into the reaction space, c. a nozzle having a nozzle channel that opens directly into the reaction space and through which a gaseous or particulate silicon-containing starting material can be fed into the reaction space, and d. a device adapted to introduce an inert gas into the reaction space such that it protects the exit opening of the nozzle channel against thermal stress resulting from the high-temperature gas.

The invention relates to an optical emission spectrometer (1) being easily adjustable, and to a method (100) to set-up and operate such a spectrometer (1) comprising a plasma stand (2) to establish a light emitting plasma from sample material, and an optical system (3) to measure the spectrum of the light (L) emitted by the plasma being characteristic to the sample material, where the optical system (3) comprises at least one light entrance aperture (31), at least one diffraction grating (32) to split up the light (L) coming from the plasma (A) and one or more detectors (33) to measure the spectrum of the light (L), wherein the plasma stand (2) and the optical system (3) are directly and fixedly mounted on respective a plasma stand flange (2B) and an optical system flange (3B) which are directly and fixedly connected to each other and wherein the optical emission spectrometer (1) further comprises an analyzing unit (34) adapted to analyze the measured spectrum and to compensate for a drift of the spectrum relative to the detector (33) potentially caused by heat transferred from the plasma stand (2) to the optical system (3) considering the thermal expansion of the optical system (3).

A stress-free transparent silicon oxide coated polymer substrates and a method for depositing a stress-free transparent silicon oxide based layer on polymer substrates using a PECVD device including at least one hollow cathode plasma source.