A sensing electrode includes a first electrode assembly, a second electrode assembly and a sealing component. The first electrode assembly includes an inner tubular body and a reference electrode component installed in the inner tubular body. The second electrode assembly includes an outer tubular body and a working electrode component installed in the outer tubular body. The first electrode assembly is installed in the outer tubular body. The sealing component is located between the inner and outer tubular bodies and provided to inhibit infiltration of an etching solution into the outer tubular body and leakage of an electrolyte from the inner tubular body. Thus, the sensing electrode has a better stability and service life.

The present invention is directed to provide novel composite copper components. For example, provided is a composite copper component including a copper oxide-containing layer formed on at least a portion of the surface of a copper component, in which when the surface of the composite copper component is bonded to a resin substrate by thermocompression, and the copper component is peeled off from the resin substrate after the thermocompression bonding, metal contained in the copper oxide-containing layer is transferred to the resin substrate.

A bulk substrate for stretchable electronics. The bulk substrate is manufactured with a process that forms a soft-elastic region of the bulk substrate. The soft-elastic region includes a strain capacity of greater than or equal to 25% and a first Young's modulus below 10% of a maximum local modulus of the bulk substrate. The process also forms a stiff-elastic region of the bulk substrate. The stiff-elastic region includes a strain capacity of less than or equal to 5% and a second Young's modulus greater than 10% of the maximum local modulus of the bulk substrate.

The method for separation of metals from electronic cards includes a step of processing the electronic cards in an aqueous medium under supercritical conditions. The method also a later step of crushing solid materials coming from the treatment under supercritical conditions.

A desmear module for a horizontal galvanic or wet-chemical process line for metal, in particular copper, deposition on a substrate to be treated for a removal of precipitates comprising a desmear container connectable to a desmear unit, a pump and at least a first liquid connection element for connecting said pump with the desmear unit, wherein said pump is in conjunction with said desmear unit by said at least first liquid connection element; and wherein a treatment liquid level is provided inside the desmear module, which is above an intake area of the pump; wherein the desmear module further comprises at least a first liquid area, at least an adjacent second liquid area comprising the intake area of the pump, and at least a first separating element arranged between said at least first liquid area and said at least second liquid area.

The disclosure relates to a method for manufacturing a transfer film including an electrode layer, the method comprising: an electrode layer formation step of forming an electrode layer on a carrier member by using a conductive material; a placement step of placing the carrier member on at least one side of an insulating resin layer respectively; a bonding step of bonding the carrier member and the insulating resin layer together by applying pressure thereto; and a transfer step of removing the carrier member to transfer the electrode layer on the insulating resin layer.

A method for repairing a fine line is provided. Nano metal particles are filled in a defect of a circuit board. The nano metal particles in the defect are irradiated by a laser, or heated, such that the nano metal particles in the defect are metallurgically bonded to an original line of the circuit board. A surface of the circuit board is cleaned to remove residual nano metal particles on parts of the circuit board where metallurgical bonding is not performed, thereby completing line repairing of the circuit board.

The present invention relates to a method for forming a circuit using a seed layer. The method for forming a circuit using a seed layer according to the present invention, may realize a fine pitch, increase the adhesion of the circuit, and prevent the migration phenomenon.

The disclosure relates to a microcircuit forming method. The microcircuit forming method according to the disclosure comprises: a seed-layer forming step for forming a high-reflectivity seed layer on a substrate material by using a conductive material; a pattern-layer forming step for forming a pattern layer on the seed layer, the pattern layer having a pattern hole arranged thereon to allow the seed layer to be selectively exposed therethrough; a plating step for filling the pattern hole with a conductive material; a pattern-layer removing step for removing the pattern layer; and a seed-layer patterning step for removing a part of the seed layer which does not overlap the conductive material in the plating step, wherein the high-reflectivity seed layer has a specular reflection property.

A method for repairing a fine line is provided. Nano metal particles are filled in a defect of a circuit board. The nano metal particles in the defect are irradiated by a laser, or heated, such that the nano metal particles in the defect are metallurgically bonded to an original line of the circuit board. A surface of the circuit board is cleaned to remove residual nano metal particles on parts of the circuit board where metallurgical bonding is not performed, thereby completing line repairing of the circuit board.