A deposition method includes depositing on a surface of a substrate a stack by an ALD (atomic layer deposition). Also provided is an ALD reactor for carrying out the method and products obtained using the deposition method.

Provided are a desmearing method and a desmearing device which are able to reliably remove a smear derived from any of an inorganic substance and an organic substance, and eliminate the need to use a chemical that requires a waste liquid treatment. The desmearing method of the present invention is directed to a desmearing method for a wiring substrate material that is a laminated body of insulating layers made from resin containing a filler and a conductive layer, and includes an ultraviolet irradiation treatment step for irradiating the wiring substrate material with ultraviolet beams with a wavelength of 220 nm or less, and a physical vibration treatment step for applying physical vibrations to the wiring substrate material which has undergone the ultraviolet irradiation treatment step.

A method for producing a joined structure according to the present invention includes: a reflow step of heating a first member and a solder material while keeping them in contact with each other in a reflow chamber to melt a solder alloy constituting the solder material, the reflow step including: a first reflow step of melting the solder alloy with an atmosphere in the reflow chamber reduced to a first pressure P.sub.1 lower than the atmospheric pressure; and a second reflow step of, after the first reflow step, melting the solder alloy with the atmosphere in the reflow chamber reduced to a second pressure P.sub.2 lower than the first pressure P.sub.1.

A tool and a method of reflow are provided. In various embodiments, the tool includes a chamber unit, a wafer lifting system, a heater, and an exhausting unit. The wafer lifting system is disposed in the chamber unit. The heater is coupled to the chamber unit, and configured to heat the wafer. The exhausting unit coupled to the chamber unit, and configured to exhaust gas in the chamber unit. The wafer lifting system is configured to receive and move the wafer in the chamber unit, and to provide a vertical distance between the heater and the wafer in the chamber unit.

An ultramicro circuit board based on an ultrathin adhesiveless flexible carbon-based material and a preparation method thereof. The method comprises the steps of: S1. depositing to form a PI film on a surface of a quantum carbon-based film through a chemical vapor deposition (CVD) reaction, and manufacturing a flexible circuit board base material with a quantum carbon-based film/PI double-layer composite structure; and S2. manufacturing a high-frequency ultramicro circuit antenna on the flexible circuit board base material through a laser scanning etching method. The preparation method has the advantages of being good in environmental friendliness, high in efficiency, low in manufacturing cost and the like, and the manufactured antenna ultramicro circuit board has the advantages of being high in thermal and electrical conductivity, ultra-flexible, low in dielectric, low in loss and high in shielding performance, which can be applied to 5G equipment.

A method of encapsulating an electronic assembly comprises disposing a plurality of electrically non-conductive particles on a substrate which carries one or more components of the electronic assembly; introducing a reactive parylene monomer in a vapor form into interstitial spaces among the plurality of the electrically non-conductive particles; and forming a parylene binder in the interstitial spaces of the electrically non-conductive particles from the reactive parylene monomer.

[Object] Provided are a laminate film and an electrode substrate film with excellent etching quality, in which a circuit pattern formed by etching processing is less visible under highly bright illumination, and a method of manufacturing the same. [Solving Means] A laminate film includes a transparent substrate 60 formed of a resin film and a layered film provided on at least one surface of the transparent substrate. The layered film includes metal absorption layers 61 and 63 as a first layer and metal layers (62, 65), (64, 66) as a second layer, counted from the transparent substrate side. The metal absorption layers are formed by a reactive sputtering method which uses a metal target made of Ni alone or an alloy containing two or more elements selected from Ni, Ti, Al, V, W, Ta, Si, Cr, Ag, Mo, and Cu, and a reactive gas containing oxygen. The reactive gas contains hydrogen.

A method for repairing a printed circuit board (PCB) including the steps of presenting a PCB having an initial coating on a surface thereof, removing the initial coating from the surface of the PCB at least in an area in need of repair, and recoating at least the area of the PCB in need of repair by way of atomic layer deposition.

Flexible electrical devices comprising electrode layers on softening polymers and methods of manufacturing such devices, including lift-off processes for forming electrodes on softening polymers, processes for forming devices with a patterned double softening polymer layer, and solder reflow processes for forming electrical contacts on softening polymers.

An interposer for electrical connection between a CPU chip and a circuit board is provided. The interposer includes a board-shaped base substrate made of glass having a coefficient of thermal expansion ranging from 3.110.sup.6/K to 3.410.sup.6/K. The interposer further includes a number of holes having diameters ranging from 20 m to 200 m. The number of holes ranging from 10 to 10,000 per square centimeter. Conductive paths running on one surface of the board extend right into respective holes and therethrough to the other surface of the board in order to form connection points for the chip.