A method for selective processing of a panel, the method may include receiving a panel that has a bottom side and a top side and comprises a first group of drilled holes and a second group of drilled holes; at least partially sealing a bottom of any through hole of the first group; filling, by a selective filing process, any drilled hole of the first group that has a top opening to provide at least partially filled drilled holes of the first group without filling the second group of drilled holes; and plugging, by a selective plugging process, a top of any drilled hole of the first group.

Electrical insulating properties between adjacent copper plates are improved while a defect of a bonded substrate which is caused by concentration of stress to end portions of the copper plates is prevented. A bonded substrate includes a silicon nitride ceramic substrate, a copper plate, and a bonding layer. The copper plate and the bonding layer are disposed on the silicon nitride ceramic substrate. The bonding layer bonds the copper plate to the silicon nitride ceramic substrate. The bonding layer includes: an interplate portion between the silicon nitride ceramic substrate and the copper plate; and a protruding portion protruding from between the silicon nitride ceramic substrate and the copper plate. Exposure of the silicon nitride ceramic substrate is prevented at a position where the protruding portion is disposed.

A ceramic wiring board that includes a ceramic insulator and a via-conductor. The ceramic insulator includes a crystalline constituent and an amorphous constituent. The via-conductor includes a metal and an oxide. The crystalline constituent and the oxide include at least one metal element in common. A tubular region having a thickness of 5 μm adjoins and surrounds the via-conductor and has a higher concentration of the metal element than the ceramic insulator.

A sintered compact includes an alumina phase as a primary phase, and further includes an amorphous phase containing Si and Mn and a cordierite phase. The sintered compact has a porosity of higher than or equal to 1.1% and less than or equal to 5.0%. Preferably, I1/(I1+I2) is greater than or equal to 0.20 and less than or equal to 0.45, where I1 is the strength of the main peak of cordierite obtained by an XRD method, and I2 is the strength of the main peak of alumina.

A multilayer structure having a main surface includes: a first conductor extending in parallel with the main surface; a second conductor extending in parallel with the main surface and disposed at a different position from the first conductor with respect to a thickness direction of the multilayer structure; and a third conductor having a shape extending in at least any direction as seen in a direction perpendicular to the main surface. In a range higher than a lower end of the third conductor and lower than an upper end of the third conductor in the thickness direction of the multilayer structure, at least a part of the first conductor is included and at least a part of the second conductor is included.

A method for manufacturing a ceramic substrate that includes forming a mother multilayer body by laminating a ceramic green sheet on a shrinkage suppressing green sheet, the shrinkage suppressing green sheet having a planar shrinkage rate in firing smaller than a planar shrinkage rate in firing of the ceramic green sheet; and forming a recessed portion in the mother multilayer body before firing by pressing a recessed portion formation planned region where the recessed portion is to be formed after firing of the mother multilayer body.

The examples set forth herein involve inkjet printing one or more layers on a multilayer ceramic base. In some examples, the multilayer ceramic base is fired in a first firing process before one or more inkjet printed layers are printed on the multilayer ceramic base to form a combination package comprising the multilayer ceramic base and the one or more inkjet printed layers. In further examples, the combination package is fired in a second firing process.

The present invention focuses on a silicon nitride substrate having high mechanical strength, high thermal conductivity and the like, and takes advantage of such properties to provide: a ceramic substrate capable of providing improvement in a bonding property between a silicon nitride substrate and a ceramic layer which uses a dielectric ceramic material capable of being simultaneously sintered with a low-resistance conductive material such as a low-melting metal (Ag or Cu); and a method for producing the ceramic substrate. The ceramic substrate of the present invention is obtained by stacking and bonding a silicon nitride substrate and a ceramic layer composed of a dielectric ceramic material, wherein: the dielectric ceramic material contains Mg, Al, and Si as main ingredients, and Bi or B as an accessory ingredient; and the ceramic layer includes a region with a high Si element concentration at a bonding interface with the silicon nitride substrate.

The present disclosure relates to a multilayer ceramic substrate preparation method. The multilayer ceramic substrate preparation method according to the present disclosure includes firing a plurality of ceramic green sheets, to create a plurality of ceramic thin films; forming a via hall in each of the plurality of ceramic thin films; filling the via hall of the plurality of ceramic thin films with conductive paste, and heat treating the via hall filled with the conductive paste, to form a via electrode; printing a pattern on a cross section of each of the plurality of ceramic thin films, and heat treating the printed pattern, to form an inner electrode; applying a bonding agent on the cross section of each of the ceramic thin films excluding an uppermost ceramic thin film of the plurality of ceramic thin films; aligning and laminating each of the plurality of ceramic thin films such that each of the plurality of ceramic thin films is electrically connected through the via electrode and the inner electrode; and firing or heat treating the laminated plurality of ceramic thin films.

A ceramic-copper composite having a flat plate shape, including: a ceramic layer; a copper layer; and a brazing material layer present between the ceramic layer and the copper layer, in which a specified Expression (1) is satisfied in a cut surface of the copper layer obtained when the ceramic-copper composite is cut at a plane perpendicular to a main surface of the ceramic-copper composite, where S(102)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (102) plane is within 10°, S(101)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (101) plane is within 10°, S(111)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (111) plane is within 10°, and S(112)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (112) plane is within 10°.