A method for manufacturing a flexible circuit electrode array, comprising: a) depositing a metal trace layer containing a base coating layer, a conducting layer and a top coating layer on the insulator polymer base layer; b) applying a layer of photoresist on the metal trace layer and patterning the metal trace layer and forming metal traces on the insulator polymer base layer; c) activating the insulator polymer base layer and depositing a top insulator polymer layer and forming one single insulating polymer layer with the base insulator polymer layer; d) applying a thin metal layer and a layer of photoresist on the surface of the insulator polymer layer and selective etching the insulator layer and the top coating layer to obtain at least one via; and e) filling the via with electrode material. A layer of polymer is laid down. A layer of metal is applied to the polymer and patterned to create electrodes and leads for those electrodes. A second layer of polymer is applied over the metal layer and patterned to leave openings for the electrodes, or openings are created later by means such as laser ablation. Hence the array and its supply cable are formed of a single body. Alternatively, multiple alternating layers of metal and polymer may be applied to obtain more metal traces within a given width. The method provides an excellent adhesion between the polymer base layer and the polymer top layer and insulation of the trace metals and electrodes.

A bulk substrate for stretchable electronics. The bulk substrate is manufactured with a process that forms a soft-elastic region of the bulk substrate. The soft-elastic region includes a strain capacity of greater than or equal to 25% and a first Young's modulus below 10% of a maximum local modulus of the bulk substrate. The process also forms a stiff-elastic region of the bulk substrate. The stiff-elastic region includes a strain capacity of less than or equal to 5% and a second Young's modulus greater than 10% of the maximum local modulus of the bulk substrate.

Self-sintering conductive inks can be printed and self-sintered with a simple and low-cost process mechanized by exothermic alkali metal and water reaction, with enhanced electrical and thermal performance by liquid metal fusion. Such self-sintering conductive inks may include a gallium-alkali metal component and a water absorbing gel component. After patterning, the self-sintering inks, on reaching a designed trigger temperature (including room temperature), may metallize through a two-step process. Initially the gallium-alkali metal component activates and reacts with water released from the water absorbing gel component. Then the exothermic reaction between the water and the alkali element creates an intense and highly localized heating effect, which liquefies all metallic components in the ink and, on cooling, creates a solid metal trace or interconnect. Post cooling, the metal trace or interconnect cannot be reflowed without a significant temperature increase or other energetic input.

Provided is a novel printing process for fabricating metallic, conductive and transparent ultra-thin nanowires and patterns including same on a substrate. The process includes two different controllable steps, each designed to achieving a useful and efficient pattern.

A method of preparing a graphene circuit pattern, a substrate and an electronic product are disclosed. The method of preparing a graphene circuit pattern includes: immersing a metal circuit pattern in a graphene oxide solution to cause a redox reaction between the metal circuit pattern and graphene oxide, thereby forming the graphene circuit pattern. The graphene circuit pattern may be directly formed at a location of the metal circuit pattern, and is simple in production process, low in cost, and suitable for mass production.

A method of making a device patterned with one or more electrically conductive features includes depositing a conductive material layer over an electrically insulating surface of a substrate, depositing an anti-corrosive material layer over the conductive material layer, and depositing an etch-resist material layer over the anti-corrosive material layer. The etch-resist material layer may be deposited over the anti-corrosive material layer, and the anti-corrosive material layer forming a bi-component etch mask in a pattern resulting in covered portions of the conductive material layer and exposed portions of the conductive material layer, the covered portions being positioned at locations corresponding to one or more conductive features of the device. A wet-etch process is performed to remove the exposed portions of the conductive material layer from the electrically insulating substrate, and the bi-component etch mask is removed to expose the remaining conductive material. Systems and devices relate to devices with patterned features.

A method of making a device patterned with one or more electrically conductive features includes depositing a conductive material layer over an electrically insulating surface of a substrate, depositing an anti-corrosive material layer over the conductive material layer, and depositing an etch-resist material layer over the anti-corrosive material layer. The etch-resist material layer may be deposited over the anti-corrosive material layer, and the anti-corrosive material layer forming a bi-component etch mask in a pattern resulting in covered portions of the conductive material layer and exposed portions of the conductive material layer, the covered portions being positioned at locations corresponding to one or more conductive features of the device. A wet-etch process is performed to remove the exposed portions of the conductive material layer from the electrically insulating substrate, and the bi-component etch mask is removed to expose the remaining conductive material. Systems and devices relate to devices with patterned features.

A method of preparing a graphene circuit pattern, a substrate and an electronic product are disclosed. The method of preparing a graphene circuit pattern includes: immersing a metal circuit pattern in a graphene oxide solution to cause a redox reaction between the metal circuit pattern and graphite oxide, thereby forming the graphene circuit pattern. The graphene circuit pattern may be directly formed at a location of the metal circuit pattern, and is simple in production process, low in cost, and suitable for mass production.

A method of making a device patterned with one or more electrically conductive features includes depositing a conductive material layer over an electrically insulating surface of a substrate, depositing an anti-corrosive material layer over the conductive material layer, and depositing an etch-resist material layer over the anti-corrosive material layer. The etch-resist material layer may be deposited over the anti-corrosive material layer, and the anti-corrosive material layer forming a bi-component etch mask in a pattern resulting in covered portions of the conductive material layer and exposed portions of the conductive material layer, the covered portions being positioned at locations corresponding to one or more conductive features of the device. A wet-etch process is performed to remove the exposed portions of the conductive material layer from the electrically insulating substrate, and the bi-component etch mask is removed to expose the remaining conductive material. Systems and devices relate to devices with patterned features.

A bulk substrate for stretchable electronics. The bulk substrate is manufactured with a process that forms a soft-elastic region of the bulk substrate. The soft-elastic region includes a strain capacity of greater than or equal to 25% and a first Young's modulus below 10% of a maximum local modulus of the bulk substrate. The process also forms a stiff-elastic region of the bulk substrate. The stiff-elastic region includes a strain capacity of less than or equal to 5% and a second Young's modulus greater than 10% of the maximum local modulus of the bulk substrate.