A semiconductor device includes a semiconductor substrate, a word line trench and a word line structure. The word line trench includes a first word line trench and a second word line trench. The word line structure includes a first word line structure part and a second word line structure part connected to each other. The first word line structure part is formed in the first word line trench, and the second word line structure part is formed in the second word line trench; and the first word line structure part includes an avoidance region, and the top surface of the avoidance region is aligned with the top surface of the second word line structure part, and the avoidance region is provided with insulating material.

Embodiments provide a memory device and a method for fabricating the same, relating to the field of semiconductor technology. The method includes: forming buried gate structures in a first direction in a substrate; patterning the substrate, cutting off the buried gate structures, and forming active structures arranged at parallel intervals and isolation grooves between the active structures in a second direction, where the active structures are island-shaped columnar bodies, and the active structures include the buried gate structures; forming isolation structures in the isolation grooves, where surfaces of the isolation structures are flush with surfaces of the active structures; and forming conductive word lines in the first direction on the surfaces of isolation structures and the surfaces of the active structures, where the conductive word lines cover upper surfaces of the buried gate structures in the active structures.

The invention provides a semiconductor structure and a fabrication method for same. The semiconductor structure comprises: a substrate; a plurality of word-line structures extending along a first direction on the substrate and arranged at intervals along a second direction, wherein the second direction is perpendicular to the first direction; a plurality of spacer structures disposed above the plurality of word-line structures, wherein at least one of the plurality of spacer structures comprises a first spacer layer and an air gap, the first spacer layer is disposed at a bottom portion of the spacer structures, the air gap is disposed on the first spacer layer, and the air gap is located between the plurality of first spacer layers along the second direction; and a plurality of contact plugs disposed between the plurality of spacer structures.

Embodiments of the present application relate to the field of semiconductors, and provide a manufacturing method of a semiconductor structure and a structure thereof. The method of manufacturing a semiconductor structure includes: providing a substrate, active regions and an isolation structure; patterning the active regions and the isolation structure to form a word line trench, sidewalls of the word line trench exposing the active regions and the isolation structure; performing corner rounding at least once on the active regions and the isolation structure exposed by the sidewalls of the word line trench, such that a first height difference is formed between remaining active regions and the isolation structure, wherein the corner rounding includes: etching the isolation structure exposed by the sidewalls of the word line trench, such that a first thickness of the active regions are exposed by the isolation structure.

Embodiments of the present application relate to the field of semiconductors, and provide a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, including active regions arranged at intervals and an isolation structure located between the active regions; a word line (WL) trench, penetrating through the active region and the isolation structure along a first direction; and a WL, located in the WL trench, wherein on a section in a second direction, a first height difference is formed between the active region and the isolation structure; and the second direction is parallel to the substrate and perpendicular to the first direction.

The present disclosure provides a semiconductor device, a method of manufacturing a semiconductor device and an electronic device. The method of manufacturing a semiconductor device includes: forming word line trenches on a semiconductor substrate, forming a word line structure in each of the word line trenches, and finally forming active regions. The word line trenches pass through the semiconductor substrate without passing through other material.

The present disclosure provides a method of manufacturing a semiconductor structure and a semiconductor structure. The method of manufacturing a semiconductor structure includes: providing a base, wherein the base includes an active region and a shallow trench isolation structure separating the active region, a word line trench is formed in the base, and the word line trench exposes a part of the active region and the shallow trench isolation structure; forming a first intermediate structure in the word line trenches, wherein the first intermediate structure covers side walls and a bottom wall of the word line trench, a first trench is formed in the first intermediate structure, the first intermediate structure includes a sacrificial structure, and the sacrificial structure includes a horizontal portion; and removing the horizontal portion of the sacrificial structure, and closing the first trench, and forming an air chamber.

Some embodiments include an integrated assembly having digit lines which extend along a first direction, and which are spaced from one another by intervening regions. Each of the intervening regions has a first width along a cross-section. Pillars extend upwardly from the digit lines; and the pillars include transistor channel regions extending vertically between upper and lower source/drain regions. Storage elements are coupled with the upper source/drain regions. Wordlines extend along a second direction which crosses the first direction. The wordlines include gate regions adjacent the channel regions. Shield lines are within the intervening regions and extend along the first direction. The shield lines may be coupled with at least one reference voltage node. Some embodiments include methods of forming integrated assemblies.

The disclosure relates to a semiconductor storage device and a forming method thereof. The semiconductor storage device includes a substrate; a plurality of active region structures provided on the substrate; a shallow trench isolation structure provided within the substrate, the shallow trench isolation structure surround the plurality of active region structures; a plurality of conductive line structures, extending parallel to each other along a first direction, the conductive line structure include a first region and a second region, the first region being located over each of the plurality of active region structures, the second region is located over the shallow trench isolation structure; in a direction perpendicular to the substrate, the depth of the first region is greater than the depth of the second region.

An integrated circuit device includes a device isolation trench defining an active area, a gate trench extending in a first direction across the active area and the device isolation film, a gate dielectric film covering an inner wall of the gate trench, and a conductive line filling a part of the gate trench above the gate dielectric film. The active area includes a fin body portion located under the conductive line, and a thinner fin portion protruding from the fin body portion toward the conductive line and having a width less than a width of the fin body portion in the first direction.