An electrical isolation device including a support with thickness E including two faces facing one another, referred to, respectively, as the two faces having a length L, a width l; on each face of the support, a plurality of voltage dividers is positioned extending over the length, each voltage divider including electrical components that are connected in series and arranged according to a first and a second stage, each first stage including a row of even components and a row of odd components, the rows being parallel, and adjacent, and the second stage corresponding to a linear arrangement of components.

A differential memory cell array structure for a MTP non-volatile memory is provided. The array structure is connected to a source line, a word line, a bit line, an inverted bit liner and an erase line. After an erase operation (ERS) is completed, the stored data in the differential memory cells of the selected row are not all erased. That is, only the stored data in a single selected memory cell of the selected row is erased.

A memory cell includes a substrate, a floating gate on the substrate, a control gate on the floating gate, a first dielectric layer between the floating gate and the control gate, an erase gate merged with the control gate and disposed on a first sidewall of the floating gate, a second dielectric layer between the floating gate and the erase gate, a select gate on an opposite second sidewall of the floating gate, a spacer between the select gate and the control gate and between the select gate and the floating gate, a source doping region in the substrate and adjacent to the first sidewall of the floating gate, and a drain doping region in the substrate and adjacent to the select gate.

A memory cell includes a substrate, a floating gate on the substrate, a control gate on the floating gate, a first dielectric layer between the floating gate and the control gate, an erase gate merged with the control gate and disposed on a first sidewall of the floating gate, a second dielectric layer between the floating gate and the erase gate, a select gate on an opposite second sidewall of the floating gate, a spacer between the select gate and the control gate and between the select gate and the floating gate, a source doping region in the substrate and adjacent to the first sidewall of the floating gate, and a drain doping region in the substrate and adjacent to the select gate.

A memory device includes a substrate, a first transistor, a second transistor, and a capacitor. The first transistor is over the substrate and includes a select gate. The second transistor is over the substrate and connected to the first transistor in series, in which the second transistor includes a floating gate. The capacitor is over the substrate and connected to the second transistor, wherein the capacitor includes a top electrode, a bottom electrode in the substrate, and an insulating layer between the top electrode and the bottom electrode. The insulating layer includes nitrogen. A nitrogen concentration of the insulating layer increases in a direction from the top electrode to the bottom electrode.

A semiconductor device includes a single poly non-volatile memory device including a sensing and selection gate structure, an erase gate structure, and a control gate structure. The sensing and selection gate structure includes a sensing gate and a selection gate, a bit line, a word line disposed on the selection gate, and a tunneling gate line. The erase gate structure includes an erase gate, and an erase gate line disposed near the erase gate. The control gate structure includes a control gate disposed on the substrate, and a control gate line disposed near the control gate. The sensing gate, the selection gate, the erase gate and the control gate are connected by one conductive layer. The erase gate structure implements a PMOS capacitor, an NMOS transistor, or a PMOS transistor. The semiconductor device includes a single poly non-volatile memory device including a separate program area and erase area.

The present invention relates to a single-layer polysilicon nonvolatile memory cell, a group structure thereof and a memory including the same. The memory cell includes a selection transistor and a storage transistor, wherein the selection transistor is connected in series with the storage transistor; and the selection transistor and the storage transistor are arranged on a substrate in a mutually perpendicular manner. A memory cell group includes four memory cells, arranged in a center-symmetrical array of two rows×two columns. The memory comprises at least one memory cell group. The memory cell and the memory thereof are used as a one-time programming memory cell and memory, and have the advantages of small area, high programming efficiency and capability, and strong data retention capability.

A nonvolatile memory device is provided. The device comprises a memory transistor. A first capacitor is coupled to the memory transistor. A second capacitor is coupled to the memory transistor. The second capacitor comprises a first electrode and a second electrode. The first capacitor and the second capacitor are connected to separate input terminals.

A memory device includes a substrate, a first transistor, a second transistor, and a capacitor. The first transistor is over the substrate and includes a select gate. The second transistor is over the substrate and connected to the first transistor in series, in which the second transistor includes a floating gate. The capacitor is over the substrate and connected to the second transistor, wherein the capacitor includes a top electrode, a bottom electrode in the substrate, and an insulating layer between the top electrode and the bottom electrode. The insulating layer includes nitrogen. A nitrogen concentration of the insulating layer increases in a direction from the top electrode to the bottom electrode.

First and second memory cells are arranged on a semiconductor substrate. The memory cell includes, between a first or second source region and a first or second drain, a configuration in which a first or second selection gate and a first or second floating gate are arranged in series. The first memory cell and the second memory cell are adjacent to each other in a first direction. A first signal line extending in the first direction and connected to the first and second selection gates is further provided. The first and second source regions are configured to share a first region. The first selection gate extends in a direction different from the first direction.