H
ELECTRICITY
H
ELECTRICITY
H10
SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10
SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10B
ELECTRONIC MEMORY DEVICES
H10B
ELECTRONIC MEMORY DEVICES
43/00
EEPROM devices comprising charge-trapping gate insulators
43/00
EEPROM devices comprising charge-trapping gate insulators
H10B43/20
characterised by three-dimensional arrangements, e.g. with cells on different height levels
H10B43/20
characterised by three-dimensional arrangements, e.g. with cells on different height levels
H10B43/23
with source and drain on different levels, e.g. with sloping channels
H10B43/23
with source and drain on different levels, e.g. with sloping channels
H10B43/27
the channels comprising vertical portions, e.g. U-shaped channels
H10B43/27
the channels comprising vertical portions, e.g. U-shaped channels