Carbon nanofiber capacitor apparatus and related methods are disclosed herein. An example apparatus includes an integrated circuit package substrate, and a capacitor provided in the integrated circuit package substrate. The capacitor includes a carbon fiber array, a dielectric film positioned on the carbon fiber array, and an electrode film positioned on the dielectric film.

A pillar or trench structure in a substrate includes vertical portions and one or more indented cavities in a sidewall between the vertical portions. The indented cavities are partial undercuts substantially traverse to the vertical portions pillar structure, or separate undercuts attached to an anchor. A higher capacitance density is achieved through the layering of multiple conductive contact layers and insulating layers in the undercuts and the vertical portions of the pillar or trench structure.

A method for forming a semiconductor device structure is provided. The method includes forming a first electrode layer over a substrate. The method includes forming a capacitor dielectric layer over the first electrode layer and the substrate. The method includes depositing a second electrode layer over the capacitor dielectric layer. The method includes bombarding the second electrode layer with ions of an inert gas to sputter first atoms from the second electrode layer. The treated second electrode layer has a treated first top portion, a treated first sidewall portion, and a treated first bottom portion. The treated first sidewall portion is over the sidewall of the first electrode layer and connected between the treated first top portion and the treated first bottom portion, and the treated first sidewall portion is thicker than the first sidewall portion.

Disclosed herein are IC devices with three-dimensional metal-insulator-metal capacitor structures. An example IC device implementing such capacitor structures includes studs of a first insulator material, an insulator material surrounding and in contact with upper-most portions of sidewalls of the studs, a first electrically conductive material surrounding bottom-most portions of the sidewalls of the studs, and a second electrically conductive material surrounding middle portions of the sidewalls of the studs, wherein the insulator material further surrounds the second electrically conductive material over the middle portions of the sidewalls of the studs. The IC device further includes a third electrically conductive material surrounding the insulator material surrounding the middle portions and the upper-most portions of the studs.

Semiconductor devices and methods are disclosed herein. In one example, a disclosed semiconductor device includes: an insulation layer, a first electrode with sidewalls and a bottom surface in contact with the insulation layer; a second electrode with sidewalls and a bottom surface in contact with the insulation layer; and an insulator formed between the first electrode and the second electrode. The insulator is coupled to a sidewall of the first electrode and coupled to a sidewall of the second electrode.

In some implementations described herein, a capacitor structure may include a metal-insulator-metal structure in which work function metal layers are included between the insulator layer of the capacitor structure and the conductive electrode layers of the capacitor structure. The work function metal layers may enable high-k dielectric materials to be used for the insulator layer in that the work function metal layers may provide an increased electron barrier height between the insulator layer and the conductive electrode layers, which may increase the breakdown voltage and may reduce the current leakage for the capacitor structure.

Fabricating a metal-insulator-metal (MIM) capacitor structure includes: forming a patterned metallization layer; disposing a dielectric material on the patterned metallization layer; etching one or more deep trenches through the dielectric material to the patterned metallization layer; depositing a MIM multilayer on the dielectric material and inside the one or more deep trenches formed in the dielectric material; and fabricating at least one three-dimensional MIM (3D-MIM) capacitor comprising a portion of the MIM multilayer deposited inside at least one of the one or more deep trenches; and fabricating at least one second capacitor, including at least one shallow 3D-MIM capacitor comprising a portion of the MIM multilayer deposited inside one or more shallow trenches passing partway through the dielectric material that are shallower than the one or more deep trenches, and/or at least one two-dimensional MIM (2D-MIM) capacitor comprising a portion of the MIM multilayer deposited on the dielectric material.

In one aspect, a capacitor or network of capacitors is/are provided for vertical power delivery in a package where the capacitor(s) is/are embedded in or forms the entirety of the package substrate core. In a second aspect, a plurality of thin-film capacitor structures are provided for implementing vertical power delivery in a package. In a third aspect a method is provided for fabricating hermetically sealed thin-film capacitors.

A capacitor structure includes a contact layer having first, second, third, fourth and fifth portions arranged from periphery to center, an insulating layer over the contact layer and having an opening exposing the contact layer, a bottom conductive plate in the opening, a dielectric layer conformally on the bottom conductive plate and contacting the second and fourth portions of the contact layer, and a top conductive plate on the dielectric layer. The bottom conductive plate includes first, second and third portions extending along a depth direction of the opening, separated from each other, and contacting the first, third and fifth portions of the contact layer, respectively. The first portion of the bottom conductive plate surrounds the second portion of the bottom conductive plate, and the second portion of the bottom conductive plate surrounds the third portion of the bottom conductive plate.

A semiconductor device of the disclosure may include a substrate, a gate structure on the substrate, a capacitor contact structure connected to the substrate, a lower electrode connected to the capacitor contact structure, a supporter supporting a sidewall of the lower electrode, an interfacial layer covering the lower electrode and including a halogen material, a capacitor insulating layer covering the interfacial layer and the supporter, and an upper electrode covering the capacitor insulating layer. The interfacial layer may include a first surface contacting the lower electrode, and a second surface contacting the capacitor insulating layer. The halogen material of the interfacial layer may be closer to the first surface than to the second surface.