Disclosed herein are via plug resistors for incorporation into electronic substrates, and related methods and devices. Exemplary via plug resistor structures include a resistive element within and on a surface of a via extending at least partially through an electronic substrate and first and second electrodes coupled to the resistive element.

A semiconductor device includes a first dielectric film, a resistor element disposed on the first dielectric film, and a second dielectric film disposed on the resistor element. The resistor element contains silicon, chromium, and carbon. The silicon concentration in the resistor element increases from a center part of the resistor element towards an upper surface of the resistor element, and also increases from the center part of the resistor element towards a lower surface of the resistor element.

Disclosed is a high-resistance resistor based on silicon carbide. The resistor includes a semi-insulating 4HSiC silicon carbide substrate, a silicon surface and a carbon surface of the silicon carbide substrate are provided with symmetrical atomic-thickness aluminum oxide insulating layers, thicknesses of the aluminum oxide insulating layers are 0.2 nm-2 nm, conductive metal electrodes are formed at two sides of the aluminum oxide insulating layers through evaporation, and thicknesses of the metal electrodes are 100 nm-500 nm. The present disclosure uses a high-resistance resistor based on silicon carbide that has the above structure, makes an ohmic contact electrode on a semi-insulating silicon carbide substrate, thus obtaining a resistor with a resistance of 100 T or more, and satisfying requirements of the precision measurement industry.

Disclosed herein are via plug resistors for incorporation into electronic substrates, and related methods and devices. Exemplary via plug resistor structures include a resistive element within and on a surface of a via extending at least partially through an electronic substrate and first and second electrodes coupled to the resistive element.

A method for adding a low TCR resistor to a baseline CMOS manufacturing flow. A method of forming a low TCR resistor in a CMOS manufacturing flow. A method of forming an n-type and a p-type transistor with a low TCR resistor in a CMOS manufacturing flow.

A semiconductor device includes a substrate, an insulator layer, and a field plate structure. The substrate has a background doping of a first conductivity type and includes a first doped region of a second conductivity type complementary to the first conductivity type. The insulator layer is formed on a main surface of the substrate. The field plate structure is formed on the insulator layer between the first doped region and an edge structure. The field plate structure has a high-resistive and/or semi-insulating connection with at least one non-floating conductive structure.