A method for forming a semiconductor device structure is provided. The method includes forming a first electrode layer over a substrate. The method includes forming a capacitor dielectric layer over the first electrode layer and the substrate. The method includes depositing a second electrode layer over the capacitor dielectric layer. The method includes bombarding the second electrode layer with ions of an inert gas to sputter first atoms from the second electrode layer. The treated second electrode layer has a treated first top portion, a treated first sidewall portion, and a treated first bottom portion. The treated first sidewall portion is over the sidewall of the first electrode layer and connected between the treated first top portion and the treated first bottom portion, and the treated first sidewall portion is thicker than the first sidewall portion.

To provide a thin film capacitor in which warpage is less likely to occur. A thin film capacitor includes: a metal foil having roughened upper and lower surfaces; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a dielectric film covering the lower surface of the metal foil and made of a dielectric material having a thermal expansion coefficient smaller than that of the metal foil; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the first dielectric film without contacting the metal foil. The lower surface of the metal foil is thus covered with the dielectric film having a small thermal expansion coefficient, thereby making it possible to prevent the occurrence of warpage.

An integrable electrochemical capacitor and methods for manufacturing the same are disclosed. The electrochemical capacitor comprises a first electrode comprising a first rigid piece having a first porous portion, a second electrode comprising a second rigid piece having a second porous portion, and an electrolyte in contact with the first porous portion and the second porous portion. The structure allows the electrochemical capacitor to be manufactured without a separator film between the electrodes and is compatible with semiconductor manufacturing technologies. The electrochemical capacitor can also be manufactured within a SOI layer 8.

To provide a thin film capacitor having high adhesion with respect to a circuit substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. An angle a formed by the other main surface of the metal foil and a side surface thereof is more than 20 and less than 80. The side surface is thus tapered at an angle of more than 20 and less than 80, so that it is possible to suppress warpage and to enhance adhesion with respect to a multilayer substrate when the thin film capacitor is embedded in the multilayer substrate.

A capacitor that includes a conductive porous base material with a porous part; an upper electrode opposite the porous part, the upper electrode having, as its main constituent, a material selected from one of ruthenium, platinum, and an alloy of ruthenium and platinum; and a dielectric layer between the upper electrode and the conductive porous base material.

To provide a thin film capacitor having a pair of terminal electrodes capable of being disposed on the same plane. A thin film capacitor 1 includes a metal foil having a non-roughened center portion and a roughened upper surface, a dielectric film covering the roughened upper surface of the metal foil, an electrode layer contacting the non-roughened center portion of the metal foil through an opening formed in the dielectric film, and an electrode layer contacting the dielectric film without contacting the metal foil. A thickness of the center portion of the metal foil at a position overlapping the electrode layer is larger than a thickness thereof at a position overlapping the electrode layer.

The present invention provides a thin film capacitor including a first electrode layer, a second electrode layer, and a dielectric layer provided between the first electrode layer and the second electrode layer, wherein a ratio (S/S.sub.0) of a surface area S of a surface of the first electrode layer on an opposite side to the dielectric layer to a projected area S.sub.0 in a thickness direction of the first electrode layer is 1.01 to 5.00.

A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; a second electrode layer contacting the dielectric film without contacting the metal foil; and an insulating member provided on the upper surface of the metal foil to surround the first and second electrode layers. The metal foil has an outer peripheral area which is positioned outside an area surrounded by the insulating member and which is not covered with the first and second electrode layers. A height of the electrode layer is equal to or higher than a height of the insulating member. This makes the outer peripheral portion of the thin film capacitor have a step-like shape.

To provide a thin film capacitor in which peeling-off of an electrode layer is less likely to occur. A thin film capacitor includes a metal foil having a roughened upper surface, a dielectric film covering the upper surface of the metal foil and having an opening for partly exposing the metal foil therethrough, a first electrode layer contacting the metal foil through the opening and further contacting the dielectric film, and a second electrode layer contacting the dielectric film without contacting the metal foil. With this configuration, both the first and second electrode layers can be disposed on the upper surface of the metal foil. In addition, the first electrode layer contacts not only the metal foil but also the dielectric film, making peeling of the first electrode layer less likely to occur.

A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; a second electrode layer contacting the dielectric film without contacting the metal foil; and an insulating member separating the first and second electrode layers. The insulating member has a tapered shape in cross section. With the above configuration, both the first and second electrode layers can be disposed on the upper surface of the metal foil. In addition, since the insulating member has a tapered shape in cross section, adhesion performance of the insulating member can be enhanced, thus making it possible to prevent short-circuit between the first and second electrode layers.