Some embodiments include a memory device and methods of forming the memory device. One such memory device includes a first group of memory cells, each of the memory cells of the first group being formed in a cavity of a first control gate located in one device level of the memory device. The memory device also includes a second group of memory cells, each of the memory cells of the second group being formed in a cavity of a second control gate located in another device level of the memory device. Additional apparatus and methods are described.

A method comprises forming a first insulation layer on an upper surface of a semiconductor substrate, forming a first conductive layer on the first insulation layer, and forming a compound insulation layer on the first conductive layer, wherein the compound insulation layer comprises a nitride sublayer between a lower oxide sublayer and an upper oxide sublayer. A second insulation layer is formed on the compound insulation layer. A trench is formed that extends through the second insulation layer, the compound insulation layer, the first conductive layer, the first insulation layer, and into the semiconductor substrate. The trench is filled with fill insulation material. The second insulation layer and an upper portion of the fill insulation material are removed. A second conductive layer is formed on the compound insulation layer, and on the fill insulation material in the trench.

Disclosed are memory structures and methods for forming such structures. An example method forms a vertical string of memory cells by forming an opening in interleaved tiers of dielectric tier material and nitride tier material, forming a charge storage material over sidewalls of the opening and recesses in the opening to form respective charge storage structures within the recesses. Subsequently, and separate from the formation of the floating gate structures, at least a portion of the remaining nitride tier material is removed to produce control gate recesses, each adjacent a respective charge storage structure. A control gate is formed in each control gate recess, and the control gate is separated from the charge storage structure by a dielectric structure. In some examples, these dielectric structures are also formed separately from the charge storage structures.

A semiconductor device includes a semiconductor substrate having an upper surface with a semiconductor member extending vertically from the upper surface, wherein the semiconductor member has a first conductivity type. A first region of a second conductivity type different than the first conductivity type is formed at a proximal end of the semiconductor member adjacent the upper surface. A second region of the second conductivity type is formed at a distal end of the semiconductor member. A channel region of the semiconductor member extends between the first and second regions. A floating gate laterally wraps around a first portion of the channel region. A control gate laterally wraps around the floating gate. A select gate laterally wraps around a second portion of the channel region. An erase gate laterally wraps around the semiconductor member.

A microelectronic device comprises a stack structure comprising alternating conductive structures and insulative structures arranged in tiers, each of the tiers individually comprising a conductive structure and an insulative structure, strings of memory cells vertically extending through the stack structure, the strings of memory cells comprising a channel material vertically extending through the stack structure, and another stack structure vertically overlying the stack structure and comprising other tiers of alternating levels of other conductive structures and other insulative structures, the other conductive structures exhibiting a conductivity greater than a conductivity of the conductive structures of the stack structure. Related memory devices, electronic systems, and methods are also described.

Various embodiments of the present disclosure are directed towards a method for opening a source line in a memory device. An erase gate line (EGL) and the source line are formed elongated in parallel. The source line underlies the EGL and is separated from the EGL by a dielectric layer. A first etch is performed to form a first opening through the EGL and stops on the dielectric layer. A second etch is performed to thin the dielectric layer at the first opening, wherein the first and second etches are performed with a common mask in place. A silicide process is performed to form a silicide layer on the source line at the first opening, wherein the silicide process comprises a third etch with a second mask in place and extends the first opening through the dielectric layer. A via is formed extending through the EGL to the silicide layer.

A triple-gate MOS transistor is manufactured in a semiconductor substrate including at least one active region laterally surrounded by electrically isolating regions. Trenches are etched on either side of an area of the active region configured to form a channel for the transistor. An electrically isolating layer is deposited on an internal surface of each of the trenches. Each of the trenches is then filled with a semiconductive or electrically conductive material up to an upper surface of the active region so as to form respective vertical gates on opposite sides of the channel. An electrically isolating layer is then deposited on the upper surface of the area of the active region at the channel of the transistor. At least one semiconductive or electrically conductive material then deposited on the electrically isolating layer formed at the upper surface of the active region to form a horizontal gate of the transistor.

A method of manufacturing a semiconductor device may include forming a stack with alternately stacked first material layers and second material layers, forming an opening passing through the stack, forming a memory layer in the opening, forming a slit passing through the stack and exposing the first material layers and the second material layers, and forming first barrier patterns, without removing the second material layers, by partially oxidizing the memory layer through the second material layers.

A flash memory device includes a floating gate electrode formed within a substrate semiconductor layer having a doping of a first conductivity type, a pair of active regions formed within the substrate semiconductor layer, having a doping of a second conductivity type, and laterally spaced apart by the floating gate electrode, an erase gate electrode formed within the substrate semiconductor layer and laterally offset from the floating gate electrode, and a control gate electrode that overlies the floating gate electrode. The floating gate electrode may be formed in a first opening in the substrate semiconductor layer, and the erase gate electrode may be formed in a second opening in the substrate semiconductor layer. Multiple instances of the flash memory device may be arranged as a two-dimensional array of flash memory cells.

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a memory cell included in a memory cell string; the memory cell including charge storage structure and channel structure separated from the charge storage structure by a dielectric structure; a first control gate associated with the memory cell and located on a first side of the charge storage structure and a first side of the channel structure; and a second control gate associated with the memory cell and electrically separated from the first control gate, the second control gate located on a second side of the charge storage structure and a second side of the channel structure.