A temperature sensor module includes a temperature sensor that outputs a detection signal corresponding to a temperature. The module has a mounting portion where the temperature sensor is mounted. A sealing member encapsulates the temperature sensor and the mounting portion. Additionally, the module includes a heat-conductive member that is thermally connected to the temperature sensor and made of a material with higher thermal conductivity than the sealing member. The heat-conductive member is arranged within the sealing member so that a part of the heat-conductive member is exposed from the sealing member. The heat-conductive member is designed to be in contact with a part to be measured.

The present disclosure discloses a package including a first support portion, a second support portion, and multiple pins. The first support portion includes a first upper metal layer and a first lower metal layer, wherein the first lower metal layer is connected to and overlaps with the first upper metal layer, corresponding to the position of the first upper metal layer. The second support portion is laterally separated from the first support portion, and the second support portion includes a second metal layer. The multiple pins are laterally separated from the first support portion and the second support portion, where in a top view, a ratio of a maximum length of the second metal layer to a maximum length of the package is greater than .

An overcurrent protection integrated circuit includes: a current input including a first resistor receiving an input current; a current sense amplifier circuitry including a differential amplifier, a switching element, a second resistor, and a current mirror circuit; and an overcurrent determiner including a third resistor and an overcurrent protection comparator. The current sense amplifier circuitry controls, through the differential amplifier, a voltage of the second resistor to be equal to a voltage of the first resistor, and sends out, from the switching element toward the current mirror circuit, a current decreased to a predetermined ratio relative to the input current. The overcurrent determiner compares a voltage of the third resistor and a voltage of a direct-current power supply, and outputs a signal when the voltage of the third resistor exceeds the voltage of the direct-current power supply. The first resistor and the second resistor include the same metal material.

A semiconductor device includes first semiconductor chips that each include a first control electrode and a first output electrode, second semiconductor chips each include a second control electrode and a second output electrode, first and second input circuit patterns on which the first and second input electrodes are disposed, respectively, first and second control circuit patterns electrically connected to the first and second control electrodes, respectively, first and second resistive elements, and a first inter-board wiring member. The first control electrodes and first resistive element are electrically connected via the first control circuit pattern, the second control electrodes and second resistive element are electrically connected via the second control circuit pattern, and at least one of the first output electrodes and at least one of the second output electrodes are electrically connected to each other via the first inter-board wiring member.

A manufacturing method of a semiconductor device capable of improving the accuracy of overcurrent detection is provided. The manufacturing method of a semiconductor device includes a semiconductor wafer testing process includes a first testing process to determine the resistance variation rate of the replica resistor due to manufacturing variations when manufacturing the semiconductor wafer, and a setting process to determine the variation value of the reference current based on the resistance variation rate determined in the first testing process and set the current value of the current circuit to reduce the variation value.