A semiconductor device includes a support, a first semiconductor element and a second semiconductor element that are disposed on a first side in a thickness direction of the support, and a sealing body covering a part of the support and the first and the second semiconductor elements. The support includes a first surface facing a second side in the thickness direction and exposed from the sealing body, and the first surface includes an uneven region comprising a plurality of dot-shaped recesses overlapping with each other.

According to one embodiment, a semiconductor device includes a base substrate; a case provided on the base substrate; a first stack provided inside the case on the base substrate; a second stack provided apart from the first stack on the base substrate; and a first conductor having a flat plate shape and including a first portion in contact with the first stack and a second portion in contact with the second stack. The first stack includes a first insulator, a second conductor provided on the first insulator and in contact with the first portion, and a first semiconductor element electrically connected to the second conductor. The second stack includes a second insulator and a third conductor provided on the second insulator and in contact with the second portion, and does not include a semiconductor element.

A semiconductor power device, includes: a substrate; a first, a second, a third, and a fourth conductive regions disposed on the substrate, where the first conductive region and the second conductive region are disposed on two opposite sides of the third conductive region, the fourth conductive region is disposed between the first conductive region and the third conductive region and between the second conductive region and the third conductive region, the first, the second, and the fourth conductive regions are configured to transmit DC signals, and the third conductive region is configured to transmit AC signals; a first power chip mounted in the first conductive region and connected to the third conductive region; a second power chip mounted in the second conductive region and connected to the third conductive region; and a third power chip mounted in the third conductive region and connected to the fourth conductive region.

Disclosed herein is a semiconductor module that includes a substrate body including first to third insulating layers, and a semiconductor IC having a main surface on which a redistribution layer is provided and a back surface partially covered with a back surface conductor. The semiconductor IC is embedded in the first insulating layer such that the main surface faces the second insulating layer side, and that the back surface faces the third insulating layer side. The thermal expansion coefficient of the redistribution layer is smaller than the thermal expansion coefficient of the back surface conductor. The thermal expansion coefficient of the second insulating layer is larger than the thermal expansion coefficient of the third insulating layer.

A semiconductor device includes a first semiconductor element, a second semiconductor element, a first conductive member, and a second conductive member. The first semiconductor element includes a first drain electrode and a first drain electrode on a first side in a first direction. The second semiconductor element includes a second drain electrode and a second source electrode on the first side in the first direction, and the second semiconductor element is next to the first semiconductor element in a second direction perpendicular to the first direction. The first conductive member is electrically bonded to the first drain electrode and the second drain electrode. The second conductive member is electrically bonded to the first source electrode and the second source electrode. The first conductive member and the second conductive member each intersect a gap between the first semiconductor element and the second semiconductor element as viewed in the first direction.

A power semiconductor module arrangement includes a housing, a substrate arranged in or forming a bottom of the housing, a bus bar electrically coupled to the substrate and having opposite first and second ends, and a pressing element. The first end of the bus bar is electrically and mechanically coupled to the substrate, and the second end extends to the outside of the housing. The second end of the bus bar extends in a horizontal plane in parallel to the substrate and has an opening extending therethrough in a vertical direction perpendicular to the horizontal plane. The pressing element is arranged directly adjacent to a surface of the second end of the bus bar facing towards the substrate. The pressing element includes a screw nut aligned with the opening extending through the second end of the bus bar, and one or more projecting sectors extending horizontally from the screw nut.

A semiconductor device comprises a support, a first conductive portion, a semiconductor element disposed on one side of the thickness direction of the support and supported by the support. The semiconductor element includes a circuit portion, an element first face facing another side of the thickness direction, and a first electrode provided on the element first face. The support includes a first terminal portion and a second terminal portion. The first electrode is electrically connected to the circuit portion. The first terminal portion is electrically connected to the circuit portion via the first electrode. The first conductive portion is interposed between the second terminal portion and the element first face and is connected to the second terminal portion and the element first face. The first conductive portion includes a cross-sectional area that is smaller than a cross-sectional area of the first electrode orthogonal to the thickness direction.

The disclosure concerns an electronic device provided with two high electron mobility transistors stacked on each other and having in common their source, drain, and gate electrodes. For example, each of these electrodes extends perpendicularly to the two transistors. For example, the source and drain electrodes electrically contact the conduction channels of each of the transistors so that said channels are electrically connected in parallel.

A semiconductor device includes a first lead, a semiconductor element, a second lead, a conductive member, and a sealing resin. The first lead includes a die pad having a die-pad obverse surface facing a first side in a thickness direction. The semiconductor element has an element obverse surface facing the first side in the thickness direction and includes a first electrode disposed on the element obverse surface. The semiconductor element is mounted on the die-pad obverse surface. The second lead has a second obverse surface facing the first side in the thickness direction and is spaced apart from the first lead in a first direction perpendicular to the thickness direction. The conductive member is electrically bonded to the first electrode and the second obverse surface. The sealing resin covers the semiconductor element. The conductive member is in direct contact with the second lead.

The semiconductor device includes a semiconductor element, a substrate supporting the semiconductor element, a sealing resin covering the semiconductor element and a part of the substrate, and a heat dissipation member. The substrate includes an obverse surface facing a first side in a thickness direction, and a reverse surface facing a second side in the thickness direction and exposed from the sealing resin. The semiconductor element is mounted on the obverse surface. The heat dissipation member is disposed on the substrate on the second side in the thickness direction. The heat dissipation member includes first bases located on the first side in the thickness direction, and first upright portions extending from the first bases to the second side in the thickness direction. The substrate includes first recesses recessed from the reverse surface to the first side in the thickness direction. The first bases are housed in the first recesses.