Each of varicaps 50A to 50C configured to be connected in parallel is an MOS capacitor III produced under a common and single process condition. Each of the varicaps 50A to 50C has a conductor layer serving as a second electrode and formed via a capacitance insulating film on a first conductivity-type semiconductor substrate serving as a first electrode, and a second conductivity-type impurity region formed near a surface in proximity to a region of the first conductivity-type semiconductor substrate opposing the conductor layer. Each of the varicaps 50A to 50C is configured such that a capacitance value as a capacitance element between the first conductivity-type semiconductor substrate serving as the first electrode and the conductor layer serving as the second electrode is changed by applying a control voltage to the conductor layer while applying any one of a plurality of types of direct-current voltages having different voltages to the second conductivity-type impurity region.

Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.

The invention relates to wireless biotelemetry of low level bioelectric and biosensor signals by directly modulating the backscatter of a resonant circuit. Low level electrical analog or digital signals are directly applied to a resonant circuit containing a voltage-variable capacitor such as a varactor diode, that proportionally shifts the resonant frequency and so amplitude of radiofrequency backscatter in a way that represents analog bioelectric or biosensor waveform data. By strongly driving the resonant circuit with a radiofrequency source, a voltage variable capacitance can be caused to amplify the bio-signal level by a parametric process and so provide sufficient sensitivity to telemeter for low millivolt and microvolt level signals without additional amplification. A feature of the device is its simplicity and that it accomplishes both modulation and preamplification of low level sensor signals by the same variable capacitance circuit which reduces the device size and power consumption.

Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.

A symmetric varactor structure may include a first varactor component. The first varactor component may include a gate operating as a second plate, a gate oxide layer operating as a dielectric layer and a body operating as a first plate of an area modulating capacitor. In addition, doped regions may surround the body of the first varactor component. The first varactor component may be supported on a backside by an isolation layer. The symmetric varactor structure may also include a second varactor component electrically coupled to the backside of the first varactor component through a backside conductive layer.

Each of varicaps 50A to 50C configured to be connected in parallel is an MOS capacitor III produced under a common and single process condition. Each of the varicaps 50A to 50C has a conductor layer serving as a second electrode and formed via a capacitance insulating film on a first conductivity-type semiconductor substrate serving as a first electrode, and a second conductivity-type impurity region formed near a surface in proximity to a region of the first conductivity-type semiconductor substrate opposing the conductor layer. Each of the varicaps 50A to 50C is configured such that a capacitance value as a capacitance element between the first conductivity-type semiconductor substrate serving as the first electrode and the conductor layer serving as the second electrode is changed by applying a control voltage to the conductor layer while applying any one of a plurality of types of direct-current voltages having different voltages to the second conductivity-type impurity region.

A varactor includes at least one semiconductor fin, a first gate, and a second gate physically disconnected from the first gate. The first gate and the second gate form a first FinFET and a second FinFET, respectively, with the at least one semiconductor fin. The source and drain regions of the first FinFET and the second FinFET are interconnected to form the varactor.

The invention relates to wireless biotelemetry of low level bioelectric and biosensor signals by directly modulating the backscatter of a resonant circuit. Low level electrical analog or digital signals are directly applied to a resonant circuit containing a voltage-variable capacitor such as a varactor diode, that proportionally shifts the resonant frequency and so amplitude of radiofrequency backscatter in a way that represents analog bioelectric or biosensor waveform data. By strongly driving the resonant circuit with a radiofrequency source, a voltage variable capacitance can be caused to amplify the bio-signal level by a parametric process and so provide sufficient sensitivity to telemeter for low millivolt and microvolt level signals without additional amplification. A feature of the device is its simplicity and that it accomplishes both modulation and preamplification of low level sensor signals by the same variable capacitance circuit which reduces the device size and power consumption.

Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.

A device includes a first stacked capacitor comprising a first MOS capacitance and a first MOM capacitance, the first MOS capacitance coupled to a first node, the first node configured to receive a first bias voltage, and a second stacked capacitor comprising a second MOS capacitance and a second MOM capacitance, the second MOS capacitance coupled to the first node.