The present disclosure introduces integrated circuits and related manufacturing methods, wherein each integrated circuit includes an electronic device and a thermoelectric circuit. The electronic device is formed in and/or over a semiconductor substrate. The thermoelectric circuit includes thermopiles formed in and/or over the semiconductor substrate and electrically connected in series. The thermoelectric circuit is configured to modulate operation of the electronic device in response to a potential produced by the plurality of thermopiles.

A light-emitting diode 100 includes a first region 1, for example of the P type, formed in a first layer 10 and forming, in a direction normal to a basal plane, a stack with a second region 2 having at least one quantum well formed in a second layer 20, and including a third region 3, for example of the N type, extending in the direction normal to the plane, bordering and in contact with the first and second regions 1, 2, through the first and second layers 10, 20. A process for producing a light-emitting diode 100 in which the third region 3 is formed by implantation into and through the first and second layers 10, 20.

Substrate-less electrostatic discharge (ESD) integrated circuit structures, and methods of fabricating substrate-less electrostatic discharge (ESD) integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a first fin and a second fin protruding from a semiconductor pedestal. An N-type region is in the first and second fins. A P-type region is in the semiconductor pedestal. A P/N junction is between the N-type region and the P-type region, the P/N junction on or in the semiconductor pedestal.

A semiconductor structure includes a substrate, a gate dielectric layer and a conductive layer that are stacked, and the gate dielectric layer is located between the substrate and the conductive layer. The substrate includes a semiconductor substrate and an insulating substrate which are arranged on the same layer. The conductive layer includes: a gate conductor layer, a projection of which on the substrate covers the semiconductor substrate, and an external connecting layer, a projection of which on the substrate covers the insulating substrate. A groove is formed on a bottom surface, towards the substrate, of the external connecting layer and the groove is filled with an insulator.

An alternating electric field-driven gallium nitride (GaN)-based nano-light-emitting diode (nanoLED) structure with an electric field enhancement effect is provided. The GaN-based nanoLED structure forms a nanopillar structure that runs through an indium tin oxide (ITO) layer, a p-type GaN layer, a multiple quantum well (MQW) active layer and an n-type GaN layer and reaches a GaN buffer layer; and the nanopillar structure has a cross-sectional area that is smallest at the MQW active layer and gradually increases towards two ends of a nanopillar, forming a pillar structure with a thin middle and two thick ends. The shape of the GaN-based nanopillar improves the electric field strength within the QW layer in the alternating electric field environment and increases the current density in the QW region of the nanopillar structure under current driving, forming strong electric field gain and current gain, thereby improving the luminous efficiency of the device.

A full spectrum light emitting device includes photoluminescence materials which generate light with a peak emission wavelength in a range 490 nm to 680 nm (green to red) and a broadband solid-state excitation source operable to generate broadband blue excitation light with a dominant wavelength in a range from 420 nm to 470 nm, where the broadband blue excitation light includes at least two different blue light emissions in a wavelength range 420 nm to 480 nm.

A solid-state device includes a substrate with a stack of constituent thin-film layers that define an arrangement of electrodes and intervening layers. The constituent layers can conform to or follow a non-planar surface of the substrate, thereby providing a 3-D non-planar geometry to the stack. Fabrication employs a common shadow mask moved between lateral positions offset from each other to sequentially form at least some of the layers in the stack, whereby layers with a similar function (e.g., anode, cathode, etc.) can be electrically connected together at respective edge regions. Wiring layers can be coupled to the edge regions for making electrical connection to the respective subset of layers, thereby simplifying the fabrication process. By appropriate selection and deposition of the constituent layers, the multi-layer device can be configured as an energy storage device, an electro-optic device, a sensing device, or any other solid-state device.

The present inventive concept relates to a stacked-RGB micro-light-emitting diode having corner mesa contact structures and a manufacturing method thereof. The stacked-RGB micro-light-emitting diode having corner mesa contact structures includes a first light-emitting structure, a first tunnel junction layer, a first anode layer, a second anode layer, a second tunnel junction layer, a second light-emitting structure, and a third light-emitting structure, which are sequentially stacked on a substrate. According to the present inventive concept, it is possible to increase the lifespan of the micro-light-emitting diode by forming the corner mesa contact structure on each of the light-emitting structures by etching a vertically-stacked structure.

In accordance with aspects of the present technology, a unique charge carrier transfer process from c-plane InGaN to semipolar-plane InGaN formed spontaneously in nanowire heterostructures can effectively reduce the instantaneous charge carrier density in the active region, thereby leading to significantly enhanced emission efficiency in the deep red wavelength. Furthermore, the total built-in electric field can be reduced to a few kV/cm by cancelling the piezoelectric polarization with spontaneous polarization in strain-relaxed high indium composition InGaN/GaN heterostructures. An ultra-stable red emission color can be achieved in InGaN over four orders of magnitude of excitation power range. Accordingly, aspects of the present technology advantageously provide a method for addressing some of the fundamental issues in light-emitting devices and advantageously enables the design of high efficiency and high stability optoelectronic devices.

A method for forming an integrated circuit includes forming a first guard ring around at least one transistor over a substrate. The method further includes forming a second guard ring around the first guard ring. The method further includes forming a first doped region adjacent to the first guard ring, the first doped region having a first dopant type. The method further includes forming a second doped region adjacent to the second guard ring, the second doped region having a second dopant type.