A first pixel electrode electrically connected to a first transistor, a second pixel electrode electrically connected to a second transistor, a first light-emitting layer formed over the first pixel electrode and overlapping the first pixel electrode, a second light-emitting layer formed over the second pixel electrode and overlapping the second pixel electrode are provided, the first light-emitting layer includes a quantum-dot light-emitting that emits light of a first color, and the second light-emitting layer includes an organic light-emitting layer that emits light of a second color different from the first color.

The present disclosure is directed to systems for tuning nanocube plasmonic resonators and methods for forming tunable plasmonic resonators. A tunable plasmonic resonator system can include a substrate and a nanostructure positioned on a surface of the substrate. The substrate can include a semiconductor material having a carrier density distribution. A junction can be formed between the nanostructure and the substrate forming a Schottky junction. Changing the carrier density distribution of the semiconductor material can change a plasmonic response of the plasmonic resonator.

A solid-state image pickup element including: a photoelectric conversion region; a transistor; an isolation region of a first conductivity type configured to isolate the photoelectric conversion region and the transistor from each other; a well region of the first conductivity type having the photoelectric conversion region, the transistor, and the isolation region of the first conductivity type formed therein; a contact portion configured to supply an electric potential used to fix the well region to a given electric potential; and an impurity region of the first conductivity type formed so as to extend in a depth direction from a surface of the isolation region of the first conductivity type in the isolation region of the first conductivity type between the contact portion and the photoelectric conversion region, and having a sufficiently higher impurity concentration than that of the isolation region of the first conductivity type.

Monolithic tandem chalcopyrite-perovskite photovoltaic devices and techniques for formation thereof are provided. In one aspect, a tandem photovoltaic device is provided. The tandem photovoltaic device includes a substrate; a bottom solar cell on the substrate, the bottom solar cell having a first absorber layer that includes a chalcopyrite material; and a top solar cell monolithically integrated with the bottom solar cell, the top solar cell having a second absorber layer that includes a perovskite material. A monolithic tandem photovoltaic device and method of formation thereof are also provided.

A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.

A display substrate, a display device and a remote control system are provided in order to solve a problem that the existing touch technology is not capable of touching and controlling accurately any region in the display device distant from a user. The display substrate comprises a base substrate, color filters located on the base substrate and at least one optical recognition structure which is located at least partially in non-display regions of the display substrate and is configured to sense an irradiation of a predefined light beam to generate a voltage signal and transmit the voltage signal to an external circuit through a signal line connected to the optical recognition structure.

An image sensor includes a first pixel and a second pixel. The first pixel includes a first light sensitive element, a first light filter, and a first microlens. The second pixel is disposed adjacent to the first pixel and includes a second light sensitive element, a second light filter, and a second microlens. The first pixel is configured to direct at least some of the light received at the first microlens to the second light sensitive element of the second pixel to increase optical crosstalk so as to reduce color aliasing.

Monolithic tandem chalcopyrite-perovskite photovoltaic devices and techniques for formation thereof are provided. In one aspect, a tandem photovoltaic device is provided. The tandem photovoltaic device includes a substrate; a bottom solar cell on the substrate, the bottom solar cell having a first absorber layer that includes a chalcopyrite material; and a top solar cell monolithically integrated with the bottom solar cell, the top solar cell having a second absorber layer that includes a perovskite material. A monolithic tandem photovoltaic device and method of formation thereof are also provided.

The present invention relates to a method for manufacturing a solar cell having excellent long-term reliability and high efficiency, said method including: a step (7) for applying a paste-like electrode agent to an antireflection film formed on the light receiving surface side of a semiconductor substrate having at least a pn junction, said electrode agent containing a conductive material; and an electrode firing step (9) having local heat treatment (step (9a)) for applying heat such that at least a part of the conductive material is fired by irradiating merely the electrode agent-applied portion with a laser beam, and whole body heat treatment (step (9b)) for heating the whole semiconductor substrate to a temperature below 800 C.

A method for manufacturing a solar cell according to an embodiment of the present invention includes preparing a semiconductor substrate having a first conductivity type dopant; ion-implanting a pre-amorphization elements into a front surface of the semiconductor substrate to form an amorphous layer; and forming an emitter layer by ion-implanting second conductivity type dopant into the front surface of the semiconductor substrate. The method then further includes heat-treating the layers to activate the second conductivity type dopant. The method further includes forming a back surface field layer at a back surface of the semiconductor substrate by ion-implanting a first conductivity type dopant.