A composite material includes a film containing oxide particles having a particle size of at least 0.4 m or more, and carbon nanotubes forming a network on a surface of the oxide particles.

Disclosed is a terahertz wave generating apparatus. The terahertz wave generating apparatus includes a dual mode laser including a first single mode laser that generates a first beating signal, a gain adjustment region that modulates the first beating signal, and a second single mode laser that generates a second beating signal, and a photomixer that mixes the modulated first beating signal and the second beating signal, and that modulates a current supplied based on a beating frequency of the mixed beating signals to generate a terahertz wave signal, and the gain adjustment region is formed between the first single mode laser and the second single mode laser, and the first beating signal is output from the first single mode laser to the gain adjustment region and is modulated based on a reverse bias voltage supplied to the gain adjustment region.

Described herein is an optical sensor, a detector including the optical sensor for an optical detection of at least one object, a method for manufacturing the optical sensor and various uses of the optical detector. The optical sensor can be supplied as a non-bulky hermetic package which provides an increased degree of protection against possible degradation by humidity and/or oxygen over long terms. Further, the optical sensor may be easily manufactured and integrated on a circuit carrier device.

An epitaxial structure of a nonpolar AlGaN-based deep-ultraviolet (DUV) photoelectric detector and a preparation method thereof are provided. The epitaxial structure of the nonpolar AlGaN-based DUV photoelectric detector includes a nonpolar AlN buffer layer, a nonpolar Al.sub.0.15Ga.sub.0.85N buffer layer, and a nonpolar Al.sub.0.7Ga.sub.0.3N epitaxial layer that are sequentially grown on a LaAlO.sub.3 substrate. The LaAlO.sub.3 substrate takes a (100) plane as an epitaxial plane, and AlN[11-20] as an epitaxial growth direction. With the LaAlO.sub.3 substrate, the epitaxial structure reduces dislocations and stresses between the substrate and the epitaxial buffer layer. By designing two AlGaN epitaxial buffer layers with different components, the epitaxial structure reduces a dislocation density and a surface roughness of the nonpolar AlGaN epitaxial layer, further accelerates photoresponse and detectivity of the detector, and enhances overall performance of the nonpolar AlGaN-based DUV photoelectric detector.

An apparatus for the wafer level packaging (WLP) of micro-bolometer vacuum package assemblies (VPAs), in one embodiment, includes a wafer alignment and bonding chamber, a bolometer wafer chuck and a lid wafer chuck disposed within the chamber in vertically facing opposition to each other, means for creating a first ultra-high vacuum (UHV) environment within the chamber, means for heating and cooling the bolometer wafer chuck and the lid wafer chuck independently of each other, means for moving the lid wafer chuck in the vertical direction and relative to the bolometer wafer chuck, means for moving the bolometer wafer chuck translationally in two orthogonal directions in a horizontal plane and rotationally about a vertical axis normal to the horizontal plane, and means for aligning a fiducial on a bolometer wafer held by the bolometer wafer chuck with a fiducial on a lid wafer held by the lid wafer chuck.

An optical sensing device includes a thin film transistor disposed on a substrate, an optical sensor, a planar layer, and an organic light emitting diode. The optical sensor includes a metal electrode disposed on a gate dielectric layer of the thin film transistor and connecting to a drain electrode of the thin film transistor, an optical sensing layer disposed on the metal electrode, and a first transparent electrode disposed on the optical sensing layer. The planar layer covers at least a part of the thin film transistor and the optical sensor. The organic light emitting diode is disposed on the planar layer. The anode electrode and the cathode electrode of the organic light emitting diode are electrically coupled to a gate line and a data line respectively.

A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.

Example photoconductive devices and example methods for using photoconductive devices are described. An example method may include providing a photoconductive device having a metal-semiconductor-metal structure. The method may also include controlling, based on a first input state, illumination of the photoconductive device by a first optical beam during a time period, and controlling, based on a second input state, illumination of the photoconductive device by a second optical beam during the time period. Further, the method may include detecting an amount of current produced by the photoconductive device during the time period, and based on the detected amount of current, providing an output indicative of the first input state and the second input state. The example devices can be used individually as discrete components or in integrated circuits for memory or logic applications.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. Their thickness dimensions allow them to be conveniently integrated on the same Si chip with CMOS, BiCMOS, and other electronics, with resulting packaging benefits and reduced capacitance and thus higher speeds.

A photodetection element includes a magnetic element including a first ferromagnetic layer to which light is applied, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; a first electrode in contact with a first surface of the magnetic element, the first surface being located on a first ferromagnetic layer side of the magnetic element in a lamination direction; a second electrode in contact with a second surface of the magnetic element, the second surface being opposite to the first surface; and a first high thermal conductivity layer disposed outside of the first ferromagnetic layer and having higher thermal conductivity than the first electrode.